Search Results - "Cai, W.Z."

Extraction of base and emitter series resistances from the net transadmittance parameter by Cai, W.Z., Shastri, S.

“…We report a new high-frequency technique for extracting base and emitter resistances (R/sub bb/ and R/sub e/, respectively) of a bipolar junction transistor…”
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A new method for extracting base resistance in bipolar transistors by Cai, W.Z., Loechelt, G.H., Shastri, S.

“…The base resistance extraction method presented by Linder and coworkers (2001) requires an array of dual-base npn test structures to separate the intrinsic…”
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Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications by Sangmin Lee, Vetury, R., Brown, J.D., Gibb, S.R., Cai, W.Z., Jinming Sun, Green, D.S., Shealy, J.

“…We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10%…”
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Radiation-Induced Metabolomic Changes in Sterile Male Monochamus alternatus (Coleoptera: Cerambycidae) by Qu, L. J., Wang, L. J., Zhang, Y. A., Wang, Q. H., Wang, Y. Z., Zhao, T. H., Cai, W. Z.

“…Radiation-induced sterile insect technique is a biologically based, environment-friendly method for the suppression or eradication of a number of insect pests…”
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RF Characteristics of a high-performance, 10-fF/[micro]m2 capacitor in a deep trench by Cai, W.Z, Shastri, S, Grivna, G, Wu, Yujing, Loechelt, G

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RF Characteristics of a High-Performance, 10-fF/ $muhbox m^2$ Capacitor in a Deep Trench by Cai, W.Z., Shastri, S., Grivna, G., Wu, Y., Loechelt, G.

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RF Characteristics of a high-performance, 10-fF/μm2 capacitor in a deep trench by Cai, W.Z., Shastri, S., Grivna, G., Yujing Wu, Loechelt, G.

“…We report the properties of a novel polysilicon-insulator-polysilicon trench capacitor with a 380-/spl Aring/ Si 3 N 4 dielectric that is designed and…”
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TCAD Analysis of a Vertical RF Power Transistor by Cai, W.Z., Gogoi, B., Davies, R., Lutz, D., Rice, D., Loechelt, G.H., Grivna, G.

“…A detailed TCAD analysis of a low-C gd high-power RF MOSFET incorporating a 0.25 mum sidewall gate is presented. A novel conductive plate is placed in the…”
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Iodine-assisted molecular beam epitaxy by Micovic, M., Lubyshev, D., Cai, W.Z., Flack, F., Streater, R.W., SpringThorpe, A.J., Miller, D.L.

“…Iodine was introduced into our solid source molecular beam epitaxy chamber during the growth of GaAs and AlGaAs layers and strained-layer InGaAs quantum wells…”
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Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxy by Lubyshev, D.I., Cai, W.Z., Catchen, G.L., Mayer, T.S., Miller, D.L.

“…Thallium incorporation in GaTlAs and InTlAs was systematically studied in solid source MBE by RHEED, Auger Electron Spectroscopy and X-ray diffraction as…”
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MBE growth of near-infrared InGaAs photodetectors with carbon tetrabromide as a p-type dopant by Lubyshev, D.I., Neal, J., Cai, W.Z., Micovic, M., Mayer, T.S., Miller, D.L.

“…The carbon doping of In/sub x/Ga/sub 1-x/As was systematically studied as a function of carbon tetrabromide flux and indium molar fraction. The efficiency of…”
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Development and extraction of high-frequency SPICE models for metal-insulator-metal capacitors by Cai, W.Z., Shastri, S.C., Azam, M., Hoggatt, C., Loechelt, G.H., Grivna, G.M., Wen, Y., Dow, S.

“…In the framework of a lumped-element SPICE model, we extract RF parameters for a MIM capacitor, such as series resistance and inductance. The extraction method…”
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