Search Results - "Cai, S. J."

Association between remote diffusion‐weighted imaging lesions and cerebral small vessel disease in primary intracerebral hemorrhage by Xu, X.‐h., Ye, X.‐h., Li, J.‐w., Cai, J.‐s., Gao, T., Zhang, W.‐j., Zhao, G.‐h., Tong, L.‐s., Gao, F.

“…Background and purpose The aim of this study was to examine the association amongst remote diffusion‐weighted imaging lesions (R‐DWILs), imaging markers of…”
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Selective estrogen receptor-beta (SERM-beta) compounds modulate raphe nuclei tryptophan hydroxylase-1 (TPH-1) mRNA expression and cause antidepressant-like effects in the forced swim test by Clark, J.A., Alves, S., Gundlah, C., Rocha, B., Birzin, E.T., Cai, S.-J., Flick, R., Hayes, E., Ho, K., Warrier, S., Pai, L., Yudkovitz, J., Fleischer, R., Colwell, L., Li, S., Wilkinson, H., Schaeffer, J., Wilkening, R., Mattingly, E., Hammond, M., Rohrer, S.P.

“…Estrogen acts through two molecularly distinct receptors termed estrogen receptor alpha (ERα) and estrogen receptor beta (ERβ) which bind estradiol with…”
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Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage by Qi Zhou, Hongwei Chen, Chunhua Zhou, Feng, Z. H., Cai, S. J., Chen, Kevin J.

“…In this letter, we present the deployment of Schottky source/drain (SSD) in InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors…”
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Experimental investigation on the optical emission spectroscopy of dielectric barrier discharge plasma actuators at different atmospheric pressures by Xu, S. Y., Kang, L., Cai, J. S., Tang, S. J.

“…The experiment of dielectric barrier discharge (DBD) plasma actuator using an asymmetrical electrodes configuration is conducted to investigate optical…”
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Rapid deposition of polycrystalline diamond film by DC arc plasma jet technique and its RF MESFETs by Wang, J.J., He, Z.Z., Yu, C., Song, X.B., Xu, P., Zhang, P.W., Guo, H., Liu, J.L., Li, C.M., Cai, S.J., Feng, Z.H.

“…Diamond is a promising semiconductor material for high power, high frequency and high temperature electronic devices. High-purity polycrystalline diamond with…”
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Calcium-mediated enhancement of copper tolerance in Elodea canadensis by Min, H. L, Cai, S. J, Rui, Z, Sha, S, Xie, K. B, Xu, Q. S

“…The alleviative effects of exogenous calcium on copper phytotoxicity were investigated in Elodea canadensis plants. There was a significant accumulation of Cu…”
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1,3-Bis-dibutylaminopropan-2-ol as inhibitor for reinforcement steel in chloride-contaminated simulated concrete pore solution by Liu, J. P., Chen, C. C., Cai, J. S., Liu, J. Z., Cui, G.

“…An organic compound, 1,3‐bis‐dibutylaminopropan‐2‐ol (BDAP) was prepared and tested experimentally as inhibitor for reinforcement steel in simulated concrete…”
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AlGaN/GaN pressure sensor with a Wheatstone bridge structure by Tan, X., Lv, Y. J., Zhou, X. Y., Wang, Y. G., Song, X. B., Gu, G. D., Ji, P. F., Yang, X. L., Shen, B., Feng, Z. H., Cai, S. J.

“…In this work, a Wheatstone bridge-type pressure sensor based on AlGaN/GaN heterostructure was fabricated for the first time. The pressure sensor consisted of…”
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Coupling temperature, cement hydration and rheological behaviour of fresh cemented paste backfill by Wu, D., Fall, M., Cai, S.J.

“…► Effect of temperature and cement hydration on paste backfill’s rheology is modelled. ► Model predictions agree well with the experimental results. ►…”
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Effects of nano-selenium on performance, meat quality, immune function, oxidation resistance, and tissue selenium content in broilers by Cai, S. J., Wu, C. X., Gong, L. M., Song, T., Wu, H., Zhang, L. Y.

“…ABSTRACT This study was conducted to investigate the effect of nano-selenium (nano-Se) on performance, meat quality, immune function, oxidation resistance, and…”
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18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation by Feng, Z H, Zhou, R, Xie, S Y, Yin, J Y, Fang, J X, Liu, B, Zhou, W, Chen, K J, Cai, S J

“…Enhancement-mode (E-mode) AlGaN/GaN heterojunction field effect transistors (HFETs) with a nominal gate length of 0.35 μm are fabricated on a SiC substrate by…”
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Temperature-dependent surface CO stretching frequency investigations of functionalized nanodiamond particles by Chu, C.-D., Perevedentseva, E., Yeh, V., Cai, S.-J., Tu, J.-S., Cheng, C.-L.

“…The surface properties of nanodiamonds play a decisive role in many nanodiamond applications, particularly in bio- and medical applications. The surface…”
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Influence of Fe-doping on GaN grown on sapphire substrates by MOCVD by Feng, Z.H., Liu, B., Yuan, F.P., Yin, J.Y., Liang, D., Li, X.B., Feng, Z., Yang, K.W., Cai, S.J.

“…The influence of Fe-doping on GaN grown on sapphire substrates by MOCVD was investigated using microscopy, in situ optical monitoring, double-crystal X-ray,…”
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Radiofrequency performance of hydrogenated diamond MOSFETs with alumina by Zhou, C. J., Wang, J. J., Guo, J. C., Yu, C., He, Z. Z., Liu, Q. B., Gao, X. D., Cai, S. J., Feng, Z. H.

“…Hydrogenated diamond MOSFETs with self-oxidized alumina as a gate dielectric are fabricated. The diamond MOSFETs show a high maximum drain current density of…”
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An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors by Feng, Z.H., Yu, C., Li, J., Liu, Q.B., He, Z.Z., Song, X.B., Wang, J.J., Cai, S.J.

“…Owing to its ultra high carrier mobility, graphene transistor shows great application potential as high-frequency electronics. Intrinsic cutoff frequency (fT)…”
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Graphene Amplifier MMIC on SiC Substrate by Yu, C., He, Z. Z., Liu, Q. B., Song, X. B., Xu, P., Han, T. T., Li, J., Feng, Z. H., Cai, S. J.

“…Low-noise amplifier is one of the most attractive applications of graphene transistors in the RF area. In this letter, a graphene amplifier MMIC is fabricated…”
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Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate by Yu, C., He, Z. Z., Song, X. B., Liu, Q. B., Han, T. T., Dun, S. B., Wang, J. J., Zhou, C. J., Guo, J. C., Lv, Y. J., Feng, Z. H., Cai, S. J.

“…Analog applications attract increasing interest for graphene field-effect transistors (GFETs). GFET with a cutoff frequency of up to 427 GHz has been reported;…”
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Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates by Yu, C., He, Z. Z., Li, J., Song, X. B., Liu, Q. B., Cai, S. J., Feng, Z. H.

“…Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it…”
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Enhanced-performance of AlGaN-GaN HEMTs grown on grooved sapphire substrates by Feng, Z.H., Cai, S.J., Chen, K.J., Lau, K.M.

“…We report significantly improved dc characteristics and RF performance of AlGaN-GaN HEMTs grown on grooved sapphire substrates. Grooves 60 nm deep with…”
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High-frequency noise characterization of graphene field effect transistors on SiC substrates by Yu, C., He, Z. Z., Song, X. B., Liu, Q. B., Dun, S. B., Han, T. T., Wang, J. J., Zhou, C. J., Guo, J. C., Lv, Y. J., Cai, S. J., Feng, Z. H.

“…Considering its high carrier mobility and high saturation velocity, a low-noise amplifier is thought of as being the most attractive analogue application of…”
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