Search Results - "Cañero Infante, Ingrid"

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers by Colombara, Diego, Werner, Florian, Schwarz, Torsten, Cañero Infante, Ingrid, Fleming, Yves, Valle, Nathalie, Spindler, Conrad, Vacchieri, Erica, Rey, Germain, Guennou, Mael, Bouttemy, Muriel, Manjón, Alba Garzón, Peral Alonso, Inmaculada, Melchiorre, Michele, El Adib, Brahime, Gault, Baptiste, Raabe, Dierk, Dale, Phillip J., Siebentritt, Susanne

“…Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is…”
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Quantification of Crystalline Phases in Hf0.5Zr0.5O2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations by Cervasio, Rebecca, Amzallag, Emilie, Verseils, Marine, Hemme, Pierre, Brubach, Jean-Blaise, Infante, Ingrid Cañero, Segantini, Greta, Rojo Romeo, Pedro, Coati, Alessandro, Vlad, Alina, Garreau, Yves, Resta, Andrea, Vilquin, Bertrand, Creuze, Jérôme, Roy, Pascale

“…In the quest for thinner and more efficient ferroelectric devices, Hf0.5Zr0.5O2 (HZO) has emerged as a potential ultrathin and lead-free ferroelectric…”
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Low Hysteresis Vanadium Dioxide Integrated on Silicon Using Complementary Metal‐Oxide Semiconductor Compatible Oxide Buffer Layer by Sahoo, Swayam Prakash, Bugnet, Matthieu, Infante, Ingrid Cañero, Pierron, Victor, Méchin, Laurence, Cervasio, Rebecca, Hemme, Pierre, Brubach, Jean‐Blaise, Roy, Pascale, Fréchette, Luc G., Lamirand, Anne D., Vilquin, Bertrand

“…VO 2 undergoes a metal‐insulator transition (MIT) at ≈70 °C, which induces large variations in its electrical and wavelength‐dependent optical properties…”
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Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…The effect at the nanoscale of a Ti interfacial layer on the performances of TiN/HfZrO2/TiN capacitors is reported. Ferroelectric hafnium zirconium oxide (HZO)…”
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors by Segantini, Greta, Manchon, Benoît, Cañero Infante, Ingrid, Bugnet, Matthieu, Barhoumi, Rabei, Nirantar, Shruti, Mayes, Edwin, Rojo Romeo, Pedro, Blanchard, Nicholas, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary…”
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Mixtures of hyaluronic acid and liposomes for drug delivery: Phase behavior, microstructure and mobility of liposomes by El Kechai, Naila, Geiger, Sandrine, Fallacara, Arianna, Cañero Infante, Ingrid, Nicolas, Valérie, Ferrary, Evelyne, Huang, Nicolas, Bochot, Amélie, Agnely, Florence

“…[Display omitted] Hyaluronic acid liposomal gels have previously demonstrated in vivo their great potential for drug delivery. Elucidating their phase behavior…”
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Ferroelectricity Improvement in Ultra‐Thin Hf 0.5 Zr 0.5 O 2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

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Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr0.2Ti0.8O3 Films Assisted by Nanocavities by Gonzalez Casal, Sergio, Bai, Xiaofei, Alhada‐Lahbabi, Kevin, Canut, Bruno, Vilquin, Bertrand, Rojo Romeo, Pedro, Brottet, Solène, Albertini, David, Deleruyelle, Damien, Bugnet, Matthieu, Canero Infante, Ingrid, Gautier, Brice

“…The mechanical switching of ferroelectric domains is achieved in PbZr0.2Ti0.8O3 thin films obtained by the sol‐gel method for thicknesses up to 200 nm. The…”
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Quantification of Crystalline Phases in Hf 0.5 Zr 0.5 O 2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations by Cervasio, Rebecca, Amzallag, Emilie, Verseils, Marine, Hemme, Pierre, Brubach, Jean-Blaise, Infante, Ingrid Cañero, Segantini, Greta, Rojo Romeo, Pedro, Coati, Alessandro, Vlad, Alina, Garreau, Yves, Resta, Andrea, Vilquin, Bertrand, Creuze, Jérôme, Roy, Pascale

“…In the quest for thinner and more efficient ferroelectric devices, Hf Zr O (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material…”
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Ferroelectricity Improvement in Ultra‐Thin Hf 0.5 Zr 0.5 O 2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

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Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…Ultra‐Thin Hf0.5Zr0.5O2 Capacitors Through interface engineering, Greta Segantini and co‐workers improve ferroelectricity and scalability of hafnium zirconium…”
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors by Segantini, Greta, Manchon, Benoît, Cañero Infante, Ingrid, Bugnet, Matthieu, Barhoumi, Rabei, Nirantar, Shruti, Mayes, Edwin, Rojo Romeo, Pedro, Blanchard, Nicholas, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary…”
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Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by Nanocavities by Gonzalez Casal, Sergio, Bai, Xiaofei, Alhada‐Lahbabi, Kevin, Canut, Bruno, Vilquin, Bertrand, Rojo Romeo, Pedro, Brottet, Solène, Albertini, David, Deleruyelle, Damien, Bugnet, Matthieu, Canero Infante, Ingrid, Gautier, Brice

“…The mechanical switching of ferroelectric domains is achieved in PbZr 0.2 Ti 0.8 O 3 thin films obtained by the sol‐gel method for thicknesses up to 200 nm…”
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