Search Results - "CURRIE, T. M"

Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates by Currie, M. T., Leitz, C. W., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Antoniadis, D. A.

“…Surface channel strained Si metal–oxide–semiconductor field-effect transistors (MOSFETs) are a leading contender for future high performance complementary…”
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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing by Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., Fitzgerald, E. A.

“…A method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented. This…”
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Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates by Lee, Minjoo L., Leitz, C. W., Cheng, Z., Pitera, A. J., Langdo, T., Currie, M. T., Taraschi, G., Fitzgerald, E. A., Antoniadis, Dimitri A.

“…We have fabricated strained Ge channel p-type metal–oxide–semiconductor field-effect transistors (p-MOSFETs) on Si0.3Ge0.7 virtual substrates. The poor…”
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High quality Ge on Si by epitaxial necking by Langdo, T. A., Leitz, C. W., Currie, M. T., Fitzgerald, E. A., Lochtefeld, A., Antoniadis, D. A.

“…We show that pure Ge grown selectively on SiO2/Si substrates in 100 nm holes is highly perfect at the top surface compared to conventional Ge…”
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High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers by Samavedam, S. B., Currie, M. T., Langdo, T. A., Fitzgerald, E. A.

“…The integration of Ge photodetectors on silicon substrates is advantageous for various Si-based optoelectronics applications. We have fabricated integrated Ge…”
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Hole mobility enhancements in strained Si/Si1−yGey  p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates by Leitz, C. W., Currie, M. T., Lee, M. L., Cheng, Z.-Y., Antoniadis, D. A., Fitzgerald, E. A.

“…We have achieved peak hole mobility enhancement factors of 5.15 over bulk Si in metal-oxide-semiconductor field-effect transistors (MOSFETs) by combining…”
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SiGe-free strained Si on insulator by wafer bonding and layer transfer by Langdo, T. A., Currie, M. T., Lochtefeld, A., Hammond, R., Carlin, J. A., Erdtmann, M., Braithwaite, G., Yang, V. K., Vineis, C. J., Badawi, H., Bulsara, M. T.

“…SiGe-free strained Si on insulator substrates were fabricated by wafer bonding and hydrogen-induced layer transfer of strained Si grown on bulk relaxed…”
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SPITZER EVIDENCE FOR A LATE-HEAVY BOMBARDMENT AND THE FORMATION OF UREILITES IN η CORVI At ∼1 Gyr by LISSE, C. M, WYATT, M. C, CHEN, C. H, MORLOK, A, WATSON, D. M, MANOJ, P, SHEEHAN, P, CURRIE, T. M, THEBAULT, P, SITKO, M. L

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Dislocation dynamics in relaxed graded composition semiconductors by Fitzgerald, E.A, Kim, A.Y, Currie, M.T, Langdo, T.A, Taraschi, G, Bulsara, M.T

“…Lattice-mismatched relaxed graded composition layers in the SiGe/Si, InGaAs/GaAs, and InGaP/GaP systems have recently been created with unprecedented high…”
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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient by Bera, L.K., Mathew, Shajan, Balasubramanian, N., Braithwaite, G., Currie, M.T., Singaporewala, F., Yap, J., Hammond, R., Lochtefeld, A., Bulsara, M.T., Fitzgerald, E.A.

“…Carrier generation lifetime ( τ g) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of…”
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High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates by Sieg, R. M., Carlin, J. A., Boeckl, J. J., Ringel, S. A., Currie, M. T., Ting, S. M., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Keyes, B. M.

“…A high bulk minority-carrier lifetime in GaAs grown on Si-based substrates is demonstrated. This was achieved by utilizing a step-graded Ge/GeSi buffer…”
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Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates by YANG, V. K, GROENERT, M. E, TARASCHI, G, LEITZ, C. W, PITERA, A. J, CURRIE, M. T, CHENG, Z, FITZGERALD, E. A

“…Working optical links epitaxially grown by atmospheric MOCVD and fabricated on Si via SiGe virtual substrates are demonstrated for the first time. The SiGe…”
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SPITZER EVIDENCE FOR A LATE-HEAVY BOMBARDMENT AND THE FORMATION OF UREILITES IN [eta] CORVI At ~1 Gyr by Lisse, C M, Wyatt, M C, Chen, C H, Morlok, A, Watson, D M, Manoj, P, Sheehan, P, Currie, T M, Thebault, P, Sitko, M L

“…We have analyzed Spitzer and NASA/IRTF 2-35 mu m spectra of the warm, ~350 K circumstellar dust around the nearby MS star [eta] Corvi (F2V, 1.4 + or - 0.3…”
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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates by Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Fitzgerald, E.A., Hoyt, J.L., Antoniadas, D.A.

“…We demonstrate electron mobility enhancement in strained-Si n-MOSFETs fabricated on relaxed Si/sub 1-x/Ge/sub x/-on-insulator (SGOI) substrates with a high Ge…”
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Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs by Fiorenza, J.G., Braithwaite, G., Leitz, C., Currie, M.T., Cheng, Z.Y., Yang, V.K., Langdo, T., Carlin, J., Somerville, M., Lochtefeld, A., Badawi, H., Bulsara, M.T.

“…This paper investigates off-state current leakage in strained silicon NMOSFETs built on supercritical thickness strained silicon films. it describes a simple…”
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Strained Si on insulator technology: from materials to devices by Langdo, T.A, Currie, M.T, Cheng, Z.-Y, Fiorenza, J.G, Erdtmann, M, Braithwaite, G, Leitz, C.W, Vineis, C.J, Carlin, J.A, Lochtefeld, A, Bulsara, M.T, Lauer, I, Antoniadis, D.A, Somerville, M

“…SiGe-free strained Si on insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced capacitance…”
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Scalability of strained-Si nMOSFETs down to 25 nm gate length by Jung-Suk Goo, Qi Xiang, Takamura, Y., Haihong Wang, Pan, J., Arasnia, F., Paton, E.N., Besser, P., Sidorov, M.V., Adem, E., Lochtefeld, A., Braithwaite, G., Currie, M.T., Hammond, R., Bulsara, M.T., Ming-Ren Lin

“…Strained-Si nMOSFETs with a standard polysilicon gate process were fabricated down to 25 nm gate length with well-behaved characteristics and small difference…”
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Fully depleted n-MOSFETs on supercritical thickness strained SOI by Lauer, I., Langdo, T.A., Cheng, Z.-Y., Fiorenza, J.G., Braithwaite, G., Currie, M.T., Leitz, C.W., Lochtefeld, A., Badawi, H., Bulsara, M.T., Somerville, M., Antoniadis, D.A.

“…Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic…”
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Dislocations in Relaxed SiGe/Si Heterostructures by Fitzgerald, E. A., Currie, M. T., Samavedam, S. B., Langdo, T. A., Taraschi, G., Yang, V., Leitz, C. W., Bulsara, M. T.

“…Recent advances in the understanding and control of threading dislocations in substantially relaxed SiGe buffer layers on Si are presented. A model for…”
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Preparation of novel SiGe-free strained Si on insulator substrates by LANGDO, T. A, LOCHTEFELD, A, FITZGERALD, E. A, CURRIE, M. T, HAMMOND, R, YANG, V. K, CARLIN, J. A, VINEIS, C. J, BRAITHWAITE, G, BADAWI, H, BULSARA, M. T

“…A novel SiGe-free SSOI substrate technology has been described. This method enables the fabrication of well controlled, epitaxially-defined, thin strained Si…”
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