Search Results - "CULLIS, A. G"

Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs by Walther, T, Cullis, A G, Norris, D J, Hopkinson, M

“…We report first quantitative measurements by energy-selected imaging in a transmission electron microscope of In segregation within an uncapped islanded…”
Get full text

Visible light emission due to quantum size effects in highly porous crystalline silicon by Cullis, A. G, Canham, L. T

“…Research results constitute direct evidence that highly porous silicon contains quantum-size crystalline structures responsible for visible emission of red…”
Get full text

Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots by Fry, P W, Itskevich, I E, Mowbray, D J, Skolnick, M S, Finley, J J, Barker, J A, O'Reilly, E P, Wilson, L R, Larkin, I A, Maksym, P A, Hopkinson, M, Al-Khafaji, M, David, J P, Cullis, A G, Hill, G, Clark, J C

“…New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum dots is deduced from Stark effect spectroscopy. Most unexpectedly it is…”
Get full text

GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation by Bastiman, F., Cullis, A.G., Hopkinson, M.

“…Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the…”
Get full text

InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STM by Bastiman, F., Cullis, A.G., Hopkinson, M.

“…The growth of InAs on GaAs(0 0 1) has attracted great interest and investigation over the past few decades primarily due to the opto-electronic properties of…”
Get full text

A study of dislocations in AlN and GaN films grown on sapphire substrates by Bai, J., Wang, T., Parbrook, P.J., Lee, K.B., Cullis, A.G.

“…The dislocations in epitaxial AlN film directly grown on (0 0 0 1) sapphire have been investigated by transmission electron microscope and X-ray diffraction…”
Get full text

Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer by Wang, T., Bai, J., Parbrook, P. J., Cullis, A. G.

“…We demonstrated air-bridged lateral growth of an Al0.98Ga0.02N layer with significant dislocation reduction by introduction of a porous AlN buffer underneath…”
Get full text

As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy by Bastiman, F., Cullis, A.G., Hopkinson, M.

“…Atomic resolution scanning tunnelling microscopy (STM) has been used to study in-situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the…”
Get full text

Hard-x-ray lensless imaging of extended objects by Rodenburg, J M, Hurst, A C, Cullis, A G, Dobson, B R, Pfeiffer, F, Bunk, O, David, C, Jefimovs, K, Johnson, I

“…We demonstrate a hard-x-ray microscope that does not use a lens and is not limited to a small field of view or an object of finite size. The method does not…”
Get full text

Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies by Lynch, S. A., Bates, R., Paul, D. J., Norris, D. J., Cullis, A. G., Ikonic, Z., Kelsall, R. W., Harrison, P., Arnone, D. D., Pidgeon, C. R.

“…The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon…”
Get full text

Ga assisted oxide desorption on GaAs(0 0 1) studied by scanning tunnelling microscopy by Bastiman, F., Lin, J.C., Cullis, A.G., Hogg, R., Skolnick, M.

“…Native oxide removal on GaAs wafers under conventional thermal desorption causes severe surface degradation. Recently a new method of Ga assisted oxide removal…”
Get full text

V-shaped pits formed at the GaN/AlN interface by Bai, J., Wang, T., Parbrook, P.J., Ross, I.M., Cullis, A.G.

“…A high-quality GaN layer has been achieved using an AlN buffer layer directly grown on a sapphire substrate at high temperature. The microstructure was…”
Get full text

Generation of misfit dislocations in highly mismatched GaN/AlN layers by Bai, J., Wang, T., Lee, K.B., Parbrook, P.J., Wang, Q., Cullis, A.G.

“…A grid of regularly-distributed misfit dislocation (MD) arrays is observed in GaN films grown on AlN buffer layers by plan-view and cross-sectional…”
Get full text

Effect of anneal temperature on GaN nucleation layer transformation by Lada, M, Cullis, A.G, Parbrook, P.J

“…The effect of anneal temperature on the nucleation layer transformation of GaN deposited on sapphire by metalorganic vapour phase epitaxy has been investigated…”
Get full text

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells by O’Neill, J. P., Ross, I. M., Cullis, A. G., Wang, T., Parbrook, P. J.

“…We report a study of the morphology and composition of InxGa1−xN/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have…”
Get full text

Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters by Bates, R., Lynch, S. A., Paul, D. J., Ikonic, Z., Kelsall, R. W., Harrison, P., Liew, S. L., Norris, D. J., Cullis, A. G., Tribe, W. R., Arnone, D. D.

“…The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date…”
Get full text

Transmission Properties of Plasmonic Metamaterial Quantum Cascade Lasers by Austin, D, Mullin, N, Bismuto, A, Luxmoore, I, Adawi, A M, Revin, D G, Soulby, M, Cockburn, J W, Jiang, Q, Krysa, A B, Cullis, A G, Faist, J, Hobbs, J K, Wilson, L R

“…We report the results of transmission experiments performed on hybridized plasmonic metamaterial quantum cascade lasers. This device was formed by etching an…”
Get full text

Transmission microscopy without lenses for objects of unlimited size by Rodenburg, J.M., Hurst, A.C., Cullis, A.G.

“…We demonstrate experimentally, for the first time, a new form of lensless microscopy. The image we obtain contains the entire wavefunction emanating from the…”
Get full text

Spontaneous Emission Control in Micropillar Cavities Containing a Fluorescent Molecular Dye by Adawi, A. M., Cadby, A., Connolly, L. G., Hung, W.-C., Dean, R., Tahraoui, A., Fox, A. M., Cullis, A. G., Sanvitto, D., Skolnick, M. S., Lidzey, D. G.

“…The fabrication of micropillar microcavities containing a fluorescent organic dye is reported. Scanning near‐field optical microscopy of the luminescence from…”
Get full text

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices by Armigliato, A., Balboni, R., Carnevale, G. P., Pavia, G., Piccolo, D., Frabboni, S., Benedetti, A., Cullis, A. G.

“…A method of obtaining quantitative two-dimensional (2D) maps of strain by the convergent beam electron diffraction technique in a transmission electron…”
Get full text