Search Results - "COWERN, N. E. B"

Extended point defects in crystalline materials: Ge and Si by Cowern, N E B, Simdyankin, S, Ahn, C, Bennett, N S, Goss, J P, Hartmann, J-M, Pakfar, A, Hamm, S, Valentin, J, Napolitani, E, De Salvador, D, Bruno, E, Mirabella, S

“…B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge. We find two distinct self-interstitial forms--a simple…”
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Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique by Bennett, N. S., Cowern, N. E. B.

“…In this coming decade, complementary metal-oxide-semiconductor microelectronic devices may undergo a major change with the implementation of germanium…”
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Raman scattering studies of ultrashallow Sb implants in strained Si by O’Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., Cowern, N. E. B., Lankinen, A., Tuomi, T. O.

“…Sheet resistance ( R s ) reductions are presented for antimony doped layers in strained Si. We use micro-Raman spectroscopy to characterise the impact of a low…”
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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon by Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Collart, E. J. H., Felch, S. B., Cowern, N. E. B.

“…We investigate the impact of amorphization and C co-implantation on B diffusion and activation properties after conventional spike rapid thermal annealing…”
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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si by Pawlak, B. J., Cowern, N. E. B., Ahn, C., Vandervorst, W., Gwilliam, R., van Berkum, J. G. M.

“…A series of B implantation experiments into initially amorphized and not fully recrystallized Si, i.e., into an existing a/c-Si bi-layer material, have been…”
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Energetics of Self-Interstitial Clusters in Si by Cowern, N. E. B., Mannino, G., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., van Berkum, J. G. M., Cristiano, F., Claverie, A., Jaraíz, M.

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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions by Pawlak, B. J., Surdeanu, R., Colombeau, B., Smith, A. J., Cowern, N. E. B., Lindsay, R., Vandervorst, W., Brijs, B., Richard, O., Cristiano, F.

“…We investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and…”
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Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001) by LU XU, MCNALLY, P. J, DILLIWAY, G. D. M, COWERN, N. E. B, JEYNES, Chris, MENDOZA, Ernest, ASHBURN, Peter, BAGNALL, Darren M

“…An investigation of the microscopic mechanisms of Ge self-assembling island growth is of great importance for future optoelectronic applications of quantum dot…”
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Diffusion in a single crystal within a stressed environment by Cowern, N E B

“…The energetics of point defects and diffusion in a single crystal is analyzed with respect to stress in overlying or encapsulating layers. The resulting theory…”
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Mechanisms of B deactivation control by F co-implantation by Cowern, N. E. B., Colombeau, B., Benson, J., Smith, A. J., Lerch, W., Paul, S., Graf, T., Cristiano, F., Hebras, X., Bolze, D.

“…Thermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials…”
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Boron uphill diffusion during ultrashallow junction formation by Duffy, R., Venezia, V. C., Heringa, A., Hüsken, T. W. T., Hopstaken, M. J. P., Cowern, N. E. B., Griffin, P. B., Wang, C. C.

“…The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been…”
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Constraints on micro-Raman strain metrology for highly doped strained Si materials by O’Reilly, L., Horan, K., McNally, P. J., Bennett, N. S., Cowern, N. E. B., Lankinen, A., Sealy, B. J., Gwilliam, R. M., Noakes, T. C. Q., Bailey, P.

“…Ultraviolet (UV), low penetration depth, micro-Raman spectroscopy, and high-resolution x-ray diffraction (HRXRD) are utilized as complementary, independent…”
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Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth by Pawlak, B. J., Vandervorst, W., Smith, A. J., Cowern, N. E. B., Colombeau, B., Pages, X.

“…We investigate the influence of thermal conditions during solid phase epitaxial regrowth (SPER) on the electrical activation level of boron in preamorphized…”
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On the analysis of the activation mechanisms of sub-melt laser anneals by Clarysse, T., Bogdanowicz, J., Goossens, J., Moussa, A., Rosseel, E., Vandervorst, W., Petersen, D.H., Lin, R., Nielsen, P.F., Hansen, Ole, Merklin, G., Bennett, N.S., Cowern, N.E.B.

“…In order to fabricate carrier profiles with a junction depth (∼15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt…”
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Enhanced n-type dopant solubility in tensile-strained Si by Bennett, N.S., Radamson, H.H., Beer, C.S., Smith, A.J., Gwilliam, R.M., Cowern, N.E.B., Sealy, B.J.

“…The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence…”
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Transient activation model for antimony in relaxed and strained silicon by Lai, Y., Bennett, N.S., Ahn, C., Cowern, N.E.B., Cordero, N., Greer, J.C.

“…The transient activation model allows for a description of dopant deactivation through mechanisms such as dopant clustering. Here we propose a refined model to…”
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Structural and electrical characterisation of ion-implanted strained silicon by Horan, K., Lankinen, A., O’Reilly, L., Bennett, N.S., McNally, P.J., Sealy, B.J., Cowern, N.E.B., Tuomi, T.O.

“…The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CMOS…”
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Differential Hall characterisation of ultrashallow doping in advanced Si-based materials by Bennett, N.S., Cowern, N.E.B., Smith, A.J., Kah, M., Gwilliam, R.M., Sealy, B.J., Noakes, T.C.Q., Bailey, P., Giubertoni, D., Bersani, M.

“…Strained Si channels are commonly used by manufacturers to enhance CMOS performance and research into novel channel materials (SiGe and Ge) is well underway…”
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Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon by Mannino, G., Cowern, N. E. B., Roozeboom, F., van Berkum, J. G. M.

“…We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage…”
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Interstitial traps and diffusion in epitaxial silicon films by Cowern, N. E. B.

“…Oxidation-enhanced diffusion in molecular beam epitaxially grown epitaxial silicon films decreases rapidly with depth due to trapping of injected interstitials…”
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