Search Results - "COLONELL, J. I"

The decomposition of NO2 on Rh(111): Product NO velocity and angular intensity distributions by GIBSON, K. D, COLONELL, J. I, SIBENER, S. J

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Coverage dependence of the kinetics for H2 desorption from Rh(111) by COLONELL, J. I, CURTISS, T. J, SIBENER, S. J

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Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage by Malyshev, M. V., Donnelly, V. M., Downey, S. W., Colonell, J. I., Layadi, N.

“…Using trace rare gases-optical emission spectroscopy (TRG-OES) and Langmuir probe measurements, electron temperatures (T e ) were obtained in Cl 2 /BCl 3 /N 2…”
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Velocity distributions of recombinatively desorbed O2 originating from surface and sub-surface oxygen/Rh(111) by GIBSON, K. D, COLONELL, J. I, SIBENER, S. J

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Mask charging and profile evolution during chlorine plasma etching of silicon by Bogart, K. H. A., Klemens, F. P., Malyshev, M. V., Colonell, J. I., Donnelly, V. M., Lee, J. T. C., Lane, J. M.

“…Nonideal feature profile anomalies such as undercut, tapered, or bowed sidewalls and microtrenches at the base of trench sidewalls are often observed after…”
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Plasma damage immunity of thin gate oxide grown on very lightly N(+) implanted silicon by Cheung, K P, Misra, D, Colonell, J I, Liu, C T, Ma, Y, Chang, C P, Lai, W Y C, Liu, R, Pai, C S

“…Plasma damage immunity of gate oxide grown on very low dose (2x10(13)/cm(2)) N( ) implanted silicon is found to be improved compared to a regular gate oxide of…”
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Langmuir probe studies of a transformer-coupled plasma, aluminum etcher by Malyshev, M. V., Donnelly, V. M., Kornblit, A., Ciampa, N. A., Colonell, J. I., Lee, J. T. C.

“…Spatially resolved positive ion densities (n i + ), electron densities (n e ), electron temperatures (T e ), plasma potentials (V p ), and floating potentials…”
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An introduction to plasma etching for VLSI circuit technology by Layadi, Nace, Colonell, Jennifer I., Lee, John Tseng-Chung

“…In this review article, various aspects of plasma etching for very large scale integrated (VLSI) circuit technology are presented. The motivation for using…”
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Decomposition of NO sub 2 on Rh(111): product NO velocity and angular intensity distributions by Sibener, S J, Gibson, K D, Colonell, J I

“…The velocity and angular distributions of NO produced from the decomposition of NO sub 2 on Rh(111) under both reducing and oxidizing conditions have been…”
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Field dependent critical trap density for thin gate oxide breakdown by Cheung, K.P., Liu, C.T., Chang, C.-P., Colonell, J.I., Lai, W.Y.-C., Liu, R., Miner, J.F., Pai, C.S., Vaidya, H., Clemens, J.T., Hasegawa, E.

“…We have found that the total trapped negative charge in a thin gate-oxide at the point of breakdown is a strong function of the stress field. This observation…”
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A model of the stress time dependence of SILC by Lu, Q., Cheung, K.P., Ciampa, N.A., Liu, C.T., Chang, C.-P., Colonell, J.I., Lai, W.-Y.-C., Liu, R., Miner, J.F., Vaidya, H., Pai, C.-S., Clemens, J.T.

“…A number of groups have reported that the stress-induced leakage current (SILC) follows a power law dependence on the stress time. In this study, we observed…”
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Coverage dependence of the kinetics of H sub 2 desorption from Rh(111) by Sibener, S J, Colonell, J I, Curtiss, T J

“…Coverage dependent sticking probabilities and second order rate constants for recombinative desorption of hydrogen from Rh(111) were measured using molecular…”
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Velocity distributions of recombinatively desorbed O sub 2 originating from surface and sub-surface oxygen/Rh(111) by Sibener, S J, Gibson, K D, Colonell, J I

“…Oxygen can exist either on the surface or in the sub-surface region of Rh(111). There are clearly different thermal desorption signatures for these two states…”
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Impact of plasma-charging damage polarity on MOSFET noise by Cheung, K.P., Martin, S., Misra, D., Steiner, K., Colonell, J.I., Chang, C.P., Lai, W.Y.C., Liu, C.T., Liu, R., Pai, C.S.

“…Plasma-charging damage is known to be a high-field injection phenomenon during plasma processing. It is also known that it can happen in either the…”
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Plasma damage immunity of thin gate oxide grown on very lightly n super(+) implanted silicon by Cheung, K P, Misra, D, Colonell, J I, Liu, C T, Ma, Y, Chang, C P, Lai, W Y C, Liu, R, Pai, C S

“…Plasma damage immunity of gate oxide grown on very low dose (2 x 10 super(13)/cm super(2))N super(+) implanted silicon is found to be improved comparing to…”
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Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power by Samukawa, Seiji, Noguchi, Ko, Colonell, Jennifer I., Bogart, Katherine H. A., Malyshev, Mikhail V., Donnelly, Vincent M.

“…Pulse-time-modulated plasmas have been proposed to overcome charging problems due to electron shading in ultralarge-scale integrated patterning. In this…”
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Energy funnels - A new oxide breakdown model by Cheung, K.P., Colonell, J.I., Chang, C.P., Lai, W.Y.C., Liu, C.T., Liu, R., Pai, C.S.

“…Stress induced leakage current (SILC) and soft breakdown (SBD) are current hot topics[l,2] in thin gate-oxide reliability. We wish to report here some new…”
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Coverage dependence of the kinetics for H 2 desorption from Rh(111) by Colonell, J.I, Curtiss, T.J, Sibener, S.J

“…Coverage-dependent sticking probabilities and second-order rate constants for recombinative desorption of hydrogen from Rh(111) have been measured using…”
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Trace Rare Gases Optical Emission Spectroscopy for Determination of Electron Temperatures and Species Concentrations in Chlorine-Containing Plasmas by Donnelly, Vincent M., Malyshev, Mikhail V., Kornblit, Avi, Ciampa, Nicolas A., Colonell, Jennifer I., Lee, John T. C.

“…Trace rare gas optical emission spectroscopy has been used to obtain electron temperatures ( T e ) and percent dissociation of Cl 2 in chlorine-containing,…”
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Intrinsic and stress-induced traps in the direct tunneling current of 2.3-3.8 nm oxides and unified characterization methodologies of sub-3 nm oxides by Liu, C.T., Ghetti, A., Ma, Y., Alers, G., Chang, C.P., Cheung, K.P., Colonell, J.I., Lai, W.Y.C., Pai, C.S., Liu, R., Vaidya, H., Clemens, J.T.

“…In devices with p+ gates and p- substrates, two unique conditions exist such that the intrinsic and stress-induced traps can be probed and separated in the…”
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