Search Results - "COCKRUM, C. A"

MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress by de Lyon, T. J., Jensen, J. E., Gorwitz, M. D., Cockrum, C. A., Johnson, S. M., Venzor, G. M.

“…We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared detector device structures on Si…”
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Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications by de Lyon, T. J., Rajavel, R. D., Vigil, J. A., Jensen, J. E., Wu, O. K., Cockrum, C. A., Johnson, S. M., Venzor, G. M., Bailey, S. L., Kasai, I., Ahlgren, W. L., Smith, M. S.

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Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays by JOHNSON, S. M, DE LYON, T. J, COCKRUM, C. A, HAMILTON, W. J, TUNG, T, GESSWEIN, F. I, BAUGRATZ, B. A, RUZICKA, L. M, WU, O. K, ROTH, J. A

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Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates by DE LYON, T. J, ROTH, J. A, WU, O. K, JOHNSON, S. M, COCKRUM, C. A

“…Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0° to 8°…”
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MOCVD grown CdZnTe/GaAs/Si substrates for large-area HgCdTe IRFPAs by JOHNSON, S. M, VIGIL, J. A, MYROSZNYK, J. M, JAMES, J. B, COCKRUM, C. A, KONKEL, W. H, KALISHER, M. H, RISSER, R. F, TUNG, T, HAMILTON, W. J, AHLGREN, W. L

“…A thermal-expansion-matched focal plane array was achieved by substituting the title substrate in place of bulk CdZnTe substrates to grow HgCdTe p-on-n…”
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HgCdTe molecular beam epitaxy technology: a focus on material properties by WU, O. K, JAMBA, D. M, KAMATH, G. S, CHAPMAN, G. R, JOHNSON, S. M, PETERSON, J. M, KOSAI, K, COCKRUM, C. A

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Key issues in HgCdTe‐based focal plane arrays: An industry perspective by Tennant, William E., Cockrum, C. A., Gilpin, J. B., Kinch, M. A., Reine, M. B., Ruth, R. P.

“…Technological limits, not fundamental issues, are all that keep HgCdTe from completely dominating almost all infrared (IR) applications. The technological…”
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Molecular-beam epitaxial growth of CdTe(112) on Si(112) substrates by de Lyon, T. J., Rajavel, D., Johnson, S. M., Cockrum, C. A.

“…High crystalline quality epitaxial CdTe(112)B/ZnTe films were deposited by molecular-beam epitaxy directly onto vicinal Si(112) substrates, without use of GaAs…”
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HgCdTe 128×128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si by JOHNSON, S. M, KALISHER, M. H, AHLGREN, W. L, JAMES, J. B, COCKRUM, C. A

“…High quality p-on-n heterojunction infrared detectors have been fabricated using controllably doped HgCdTe grown by liquid phase epitaxy on CdZnTe/GaAs/Si…”
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MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs by Johnson, S. M., Vigil, J. A., James, J. B., Cockrum, C. A., Konkel, W. H., Kalisher, M. H., Risser, R. F., Tung, T., Hamilton, W. J., Ahlgren, W. L., Myrosznyk, J. M.

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Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy by de Lyon, T J, Rajavel, R D, Jensen, J E, Wu, O K

“…High-quality, single-crystal epitaxial films of CdTe(112)B and HgCdTe(112)B have been grown directly on Si(112) substrates without the need for GaAs…”
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Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays by Rajavel, R D, Jamba, D, Wu, O K, Roth, J A

“…A robust process has been developed for the reproducible growth of in-situ doped Hg^sub 1-x^Cd^sub x^Te:As alloys by molecular beam epitaxy. Net hole…”
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Metalorganic chemical vapor deposition growth of Cd1 − y Zn y Te epitaxial layers on GaAs and GaAs/Si substrates by Ahlgren, W. L., Johnson, S. M., Smith, E. J., Ruth, R. P., Johnston, B. C., Kalisher, M. H., Cockrum, C. A., James, T. W., Arney, D. L., Ziegler, C. K., Lick, W.

“…As a step toward growth of HgCdTe on GaAs and GaAs/Si substrates, Cd1–y Zn y Te buffer layers were grown on these substrates. A conventional pyrolytic process…”
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