Search Results - "CHOWDHURY, Uttiya"

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors by Jungwoo Joh, del Alamo, J.A., Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.

“…In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is…”
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Physical degradation of GaN HEMT devices under high drain bias reliability testing by Park, S.Y., Floresca, Carlo, Chowdhury, Uttiya, Jimenez, Jose L., Lee, Cathy, Beam, Edward, Saunier, Paul, Balistreri, Tony, Kim, Moon J.

“…The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC substrates. Standard III–V commercial production processing…”
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High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer by CHOWDHURY, Uttiya, WONG, Michael M, COLLINS, Charles J, BO YANG, DENYSZYN, Jonathan C, CAMPBELL, Joe C, DUPUIS, Russell D

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Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier by Wong, Michael M., Chowdhury, Uttiya, Sicault, Delphine, Becher, David T., Denyszyn, Jonathan C., Choi, Jin Ho, Zhu, Ting Gang, Feng, Milton, Dupuis, Russell D.

“…The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported…”
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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs by Chowdhury, U., Jimenez, J.L., Lee, C., Beam, E., Saunier, P., Balistreri, T., Seong-Yong Park, Taehun Lee, Wang, J., Kim, M.J., Jungwoo Joh, del Alamo, J.A.

“…AlGaN/GaN high-electron mobility transistors stressed under dc bias at various channel temperatures were studied using transmission electron microscopy for…”
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The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability by Ťapajna, Milan, Killat, Nicole, Chowdhury, Uttiya, Jimenez, Jose L., Kuball, Martin

“…► We studied reliability of AlGaN/GaN HEMTs with different surface treatment. ► Different surface treatment resulted in different surface oxide content. ►…”
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Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors by Jungwoo Joh, Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.

“…A quick and reliable method to estimate the channel temperature of GaN high electron mobility transistors is extremely important in order to understand the…”
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The role of surface barrier oxidation on AIGaN/GaN HEMTs reliability by TAPAJNA, Milan, KILLAT, Nicole, CHOWDHURY, Uttiya, JIMENEZ, Jose L, KUBALL, Martin

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MOCVD growth for UV photodetectors and light emitting diodes by Chowdhury, Uttiya

“…Due to a number of commercial, scientific and defense applications, there exists a high demand for solid-state ultraviolet (UV) light emitters and…”
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Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz by Hampson, M.D., Shyh-Chiang Shen, Schwindt, R.S., Price, R.K., Chowdhury, U., Wong, M.M., Ting Gang Zhu, Dongwon Yoo, Dupuis, R.D., Milton Feng

“…Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface…”
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MOCVD growth for UV photodetectors and light emitting diodes by Chowdhury, Uttiya

“…Due to a number of commercial, scientific and defense applications, there exists a high demand for solid-state ultraviolet (UV) light emitters and…”
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High-performance solar-blind photodetector using an Al 0.6Ga 0.4N n-type window layer by Chowdhury, Uttiya, Wong, Michael M., Collins, Charles J., Yang, Bo, Denyszyn, Jonathan C., Campbell, Joe C., Dupuis, Russell D.

“…In this paper, we report a significant improvement in the external quantum efficiency (EQE) of AlGaN p–i–n solar-blind detectors (SBDs) by use of an n-type Al…”
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Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Shelton, B.S., Lambert, D.J.H., Jian Jang Huang, Wong, M.M., Chowdhury, U., Ting Gang Zhu, Kwon, H.K., Liliental-Weber, Z., Benarama, M., Feng, M., Dupuis, R.D.

“…The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor…”
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Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs by Chowdhury, Uttiya, Price, Raymond K., Wong, Michael M., Yoo, Dongwon, Zhang, Xuebing, Feng, Milton, Dupuis, Russell D.

“…For nitride heterojunction field-effect transistors, the heterojunction forming the electron barrier has to be designed based on trade-offs between lattice…”
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AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition by Ting Gang Zhu, Denyszyn, J.C., Chowdhury, U., Wong, M.M., Dupuis, R.D.

“…We report the study of the electrical and optical characteristics of AlGaN-GaN quantum-well (QW) ultraviolet light-emitting diodes grown on SiC by…”
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AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition by Zhu, Ting Gang, Chowdhury, Uttiya, Denyszyn, Jonathan C., Wong, Michael M., Dupuis, Russell D.

“…We report the electrical and optical characteristics of an AlGaN/AlGaN quantumwell ultraviolet (UV) light-emitting diode (LED) grown on sapphire by…”
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GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition by Zhu, Ting Gang, Chowdhury, Uttiya, Wong, Michael M, Denyszyn, Jonathan C, Dupuis, Russell D

“…In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire…”
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GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition : III-V Nitrides and Silicon Carbide by TING GANG ZHU, CHOWDHURY, Uttiya, WONG, Michael M, DENYSZYN, Jonathan C, DUPUIS, Russell D

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Correlation between RF and DC reliability in GaN high electron mobility transistors by Joh, Jungwoo, Del Alamo, Jesus A., Chowdhury, Uttiya, Jimenez, Jose L.

“…Although RE life test is a more definitive technique for RE FET reliability estimation, DC life test is often preferred over RE life test due to its…”
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Physical degradation of GaN HEMT device observed in TEM during reliability test by Park, S.Y., Floresca, C., Kim, M.J., Chowdhury, U., Jimenes, J.L., Lee, C., Beam, E., Sunier, P., Balistreri, T.

“…HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong…”
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