Search Results - "CHIVERS, M. J"
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Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias
Published in IEEE transactions on microwave theory and techniques (01-06-1993)Get full text
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2
Physics of noise in quantum-confined field-effect transistors
Published in Physical review. B, Condensed matter (15-08-1996)Get full text
Journal Article -
3
Simulations of HEMT DC drain current and 1 to 50 GHz < e1 > S < /e1 > -parameters as a function of gate bias
Published in IEEE transactions on microwave theory and techniques (01-06-1993)“…The usefulness over an extended range of a high-electron-mobility transistor (HEMT) model previously validated for a 1-25-GHz < e1 > S < /e1 > -parameter model…”
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Journal Article