Search Results - "CHERNS, D"

Oxygen segregation to dislocations in GaN by Hawkridge, M. E., Cherns, D.

“…The structure and composition of threading dislocations in GaN grown by hydride vapor phase epitaxy have been examined by electron microscopy. Transmission…”
Get full text

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence by Cherns, D., Henley, S. J., Ponce, F. A.

“…Transmission electron microscopy (TEM) and scanning electron microscope cathodoluminescence (CL) have been used to determine the influence of edge and screw…”
Get full text

The growth of transparent conducting ZnO films by pulsed laser ablation by Henley, S.J., Ashfold, M.N.R., Cherns, D.

“…The structure of undoped, Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films grown on sapphire and NaCl substrates by 193 nm pulsed laser ablation of a ZnO…”
Get full text

Electron holography studies of the charge on dislocations in GaN by Cherns, D, Jiao, C G

“…Off-axis electron holography in a transmission electron microscope is used to examine the charge on threading edge dislocations in n-GaN (0001). It is shown…”
Get full text

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy by Foxon, C.T., Novikov, S.V., Hall, J.L., Campion, R.P., Cherns, D., Griffiths, I., Khongphetsak, S.

“…In this article, we propose a new complementary geometrical growth mechanism, which may partially explain some of the apparent anomalies in our understanding…”
Get full text

Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers by Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Farley, N., Campion, R. P., Foxon, C. T.

“…Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001)sapphire by…”
Get full text

Hydrogen Adsorption at Strained Pd Nanoshells by Montes de Oca, M. G, Kumarakuru, H, Cherns, D, Fermín, D. J

“…Electrochemically induced hydrogen adsorption at Au–Pd core–shell (CS) nanostructures was investigated as a function of the Pd lattice strain. CS nanoparticles…”
Get full text

CVD PREPARED Mn-DOPED ZnO NANOWIRES by Phan, T.L., Vincent, R., Cherns, D., Nghia, N.X.

“…Mn-doped ZnO nanowires prepared by chemical vapor deposition (CVD) were obtained in the temperature range of 450–500°C. X-ray diffraction patterns, SEM and TEM…”
Get full text

Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy by GRIFFITHS, IJ, CHERNS, D, ALBERT, S., BENGOECHEA‐ENCABO, A., ANGEL SANCHEZ, M., CALLEJA, E., SCHIMPKE, T., STRASSBURG, M.

“…Summary 3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a…”
Get full text

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates by Goff, L.E., Powell, R.E.L., Kent, A.J., Foxon, C.T., Novikov, S.V., Webster, R., Cherns, D.

“…The Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) of InN nanorods on Si- and C-faces of 6H–SiC substrates has been demonstrated. The optimum PA-MBE growth…”
Get full text

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire by Bell, A., Liu, R., Ponce, F. A., Amano, H., Akasaki, I., Cherns, D.

“…Distinct crystalline and optical properties have been observed in Mg-doped Al0.03Ga0.97N grown on a patterned sapphire substrate; the pattern consisting of…”
Get full text

Controlling the size and alignment of ZnO microrods using ZnO thin film templates deposited by pulsed laser ablation by HENLEY, S. J, ASHFOLD, M. N. R, NICHOLLS, D. P, WHEATLEY, P, CHERNS, D

“…The production of dense arrays of well aligned ZnO nano- and microrods with a controllable distribution of diameters is demonstrated. The rods were grown using…”
Get full text

The structure and properties of dislocations in GaN by Cherns, D, Hawkridge, M E

“…Transmission electron microscopy studies of the core structure and optoelectronic properties of dislocations in GaN films are described. It is shown that the…”
Get full text

Growth of nanostructured ZnO thin films on sapphire by Doherty, R.P., Sun, Yuekui, Sun, Ye, Warren, J.L., Fox, N.A., Cherns, D., Ashfold, M.N.R.

“…Growth of ZnO nanostructures on c-plane sapphire has been investigated using three different methods. Pulsed laser deposition (PLD) at low incident pulse…”
Get full text

The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays by Cherns, D., Webster, R.F., Novikov, S.V., Foxon, C.T., Fischer, A.M., Ponce, F.A.

“…Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (111)Si, via growth of an intermediate nanorod arrays…”
Get full text

Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques by Ponce, F. A., Cherns, D., Young, W. T., Steeds, J. W.

“…A combination of transmission electron microscopy imaging and diffraction techniques is used to characterize crystal defects in homoepitaxial GaN thin films…”
Get full text

Lateral migration of dislocations in oxygen-doped GaN grown by molecular beam epitaxy by Hawkridge, M., Cherns, D., Myers, T.

“…Threading dislocations in gallium nitride epilayers intermittently doped with oxygen were examined using transmission electron microscopy. Dislocations of all…”
Get full text

TEM characterisation of defects, strains and local electric fields in AlGaN/InGaN/GaN structures by Cherns, D.

“…This paper describes how transmission electron microscopy (TEM) can be used to study the structure and electronic properties of threading defects in GaN…”
Get full text

Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys by Holec, D., Rachbauer, R., Kiener, D., Cherns, P. D., Costa, P. M. F. J., McAleese, C., Mayrhofer, P. H., Humphreys, C. J.

Get full text

Open core threading dislocations in GaN grown by hydride vapour phase epitaxy by Cherns, D., Hawkridge, M. E.

“…Three types of threading dislocation in (0001) GaN films (c, c + a, and a-type) have been observed to have hollow cores, depending on the method of growth and…”
Get full text