Search Results - "CHAUDHRY, SAMIR"

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  1. 1

    From Hyperglycemia to Broken Heart Syndrome: A Case of Diabetic Ketoacidosis-Induced Takotsubo Cardiomyopathy by Escaño, Lorena, Desai, Prarthana, Chaudhry, Samir

    Published in Curēus (Palo Alto, CA) (19-07-2024)
    “…Diabetic ketoacidosis (DKA) is one of the hyperglycemic emergencies seen in patients with poorly controlled diabetes mellitus. One of the potential…”
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    Journal Article
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    A 0.6dB NF, 12dBm IIP3, 4.6-6GHz LNA in 0.13μm Floating-Body SOI CMOS by Jha, Amit, Zheng, Jie, Masse, Chris, Hurwitz, Paul, Chaudhry, Samir

    “…A broadband linear 5.2 GHz CMOS LNA on 130nm Tower SOI process with record 0.6 dB noise-figure, 12dBm IIP3 and 10.4dB gain is demonstrated. Using on-chip high…”
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    Conference Proceeding
  8. 8

    Statistical Modeling With the PSP MOSFET Model by Xin Li, McAndrew, C.C., Weimin Wu, Chaudhry, S., Victory, J., Gildenblat, G.

    “…PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect…”
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    Journal Article
  9. 9

    Modeling of SOI-MOSFET with Trap-Rich Substrate for RF Circuit Design by Ghosh, Soumajit, Miura-Mattausch, Mitiko, Kikuchihara, Hidevuki, Iizuka, Takahiro, Chaudhry, Samir, Sahara, Yasuyuki

    “…Many efforts have been undertaken to reduce the substrate-coupling effect in RF circuits. It has been demonstrated that a trap-rich layer underneath the BOX…”
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    Conference Proceeding
  10. 10

    Benchmark Tests for MOSFET Compact Models With Application to the PSP Model by Xin Li, Weimin Wu, Jha, A., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., McAndrew, C.C., Watts, J., Olsen, C.M., Coram, G.J., Chaudhry, S., Victory, J.

    Published in IEEE transactions on electron devices (01-02-2009)
    “…This paper presents the results of several qualitative ldquobenchmarkrdquo tests that were used to verify the physical behavior of the PSP model and its…”
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    Journal Article
  11. 11

    A study of ultra-high performance SiGe HBT devices on SOI by Thibeault, Todd, Preisler, Edward, Jie Zheng, Li Dong, Chaudhry, Samir, Jordan, Scott, Racanelli, Marco

    “…The authors present a study of SiGe HBTs with F T >200GHz on an SOI substrate for the first time. The devices built on SOI exhibit a degradation of…”
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    Conference Proceeding
  12. 12

    A 5.4GHz 0.65dB NF 6dBm IIP3 MGTR LNA in 130nm SOI CMOS by Jha, Amit, Zheng, Jie, Masse, Chris, Hurwitz, Paul, Chaudhry, Samir

    “…Using a multiple gated transistor core (MGTR) with different channel lengths, a 5.4GHz LNA in 130nm SOI CMOS is demonstrated. Using a 1V supply and consuming…”
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    Conference Proceeding
  13. 13

    The effect of triple well implant dose on performance of NMOS transistors by Bourdelle, K.K., Chaudhry, S., Chu, J.

    Published in IEEE transactions on electron devices (01-03-2002)
    “…The application of triple well (TW) structures provides important advantages for different types of silicon-integrated circuits. In a triple-well technology,…”
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    Journal Article
  14. 14

    Benchmarking the PSP Compact Model for MOS Transistors by Xin Li, Weimin Wu, Jha, A., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., McAndrew, C.C., Watts, J., Olsen, M., Coram, G., Chaudhry, S., Victory, J.

    “…Recently, the PSP model was selected as the first surface-potential-based industry standard compact MOSFET model. This work presents the results of several…”
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    Conference Proceeding
  15. 15

    Analysis and modeling of stress related effects in scaled silicon technology by Chaudhry, Samir

    Published 01-01-1996
    “…Based on the current understanding of stress related problems in silicon technology, the critical sources of stress in the silicon substrate are identified as…”
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    Dissertation
  16. 16

    A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI by Blaschke, V., Unikovski, A., Hurwitz, P., Chaudhry, S.

    Published in 2013 IEEE Radio and Wireless Symposium (01-01-2013)
    “…This paper presents the results of a compact wire-bond SP9T antenna switch that was designed as technology demonstrator for a 2.5 V CMOS, 250 fs Ron-Coff…”
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    Conference Proceeding
  17. 17

    A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI by Blaschke, V., Unikovski, A., Hurwitz, P., Chaudhry, S.

    “…This paper presents the results of a compact wire-bond SP9T antenna switch that was designed as technology demonstrator for a 2.5 V CMOS, 250 fs Ron-Coff…”
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    Conference Proceeding Journal Article
  18. 18

    PROCESS TECHNOLOGY CONSIDERATIONS FOR PHY ICs by Chaudhry, Samir

    Published in Electronic Design (17-11-2008)
    “…A rule of thumb is to multiply the bit rate by 4 to estimate the minimum fsub T/fsub MAX needed. An fsub T/fsub MAX of 40 GHz is generally sufficient for 10…”
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    Magazine Article Trade Publication Article
  19. 19

    1/f noise in advanced CMOS transistors by Nemirovsky, Y, Corcos, D, Brouk, I, Nemirovsky, A, Chaudhry, S

    “…This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of…”
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    Magazine Article
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