Search Results - "CHAUDHRY, SAMIR"
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From Hyperglycemia to Broken Heart Syndrome: A Case of Diabetic Ketoacidosis-Induced Takotsubo Cardiomyopathy
Published in Curēus (Palo Alto, CA) (19-07-2024)“…Diabetic ketoacidosis (DKA) is one of the hyperglycemic emergencies seen in patients with poorly controlled diabetes mellitus. One of the potential…”
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Journal Article -
2
CLINICAL DILEMMA OF WHO CAUSED IT: COXSACKIE VIRUS VS TAKAYASU ARTERITIS LEADING TO FULMINANT MYOCARDITIS AND CARDIOGENIC SHOCK
Published in Chest (01-10-2024)Get full text
Journal Article -
3
EVER HEARD OF DOSE-DEPENDENT DOPAMINE-INDUCED VENTRICULAR TACHYCARDIAS?
Published in Chest (01-10-2024)Get full text
Journal Article -
4
THE ROAD TO NOWHERE - A CASE OF ANEURYSMAL SAPHENOUS-VENOUS CORONARY GRAFT
Published in Journal of the American College of Cardiology (02-04-2024)Get full text
Journal Article -
5
YOU SEE STEMI IN UC: A RARE CASE OF ACUTE ST-ELEVATION MYOCARDIAL INFARCTION IN ACTIVE ULCERATIVE COLITIS
Published in Chest (01-10-2024)Get full text
Journal Article -
6
Subacute Combined Degeneration of the Cord due to Vitamin B12 Deficiency
Published in The Brown journal of hospital medicine (01-07-2023)Get full text
Journal Article -
7
A 0.6dB NF, 12dBm IIP3, 4.6-6GHz LNA in 0.13μm Floating-Body SOI CMOS
Published in 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS) (01-08-2020)“…A broadband linear 5.2 GHz CMOS LNA on 130nm Tower SOI process with record 0.6 dB noise-figure, 12dBm IIP3 and 10.4dB gain is demonstrated. Using on-chip high…”
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Conference Proceeding -
8
Statistical Modeling With the PSP MOSFET Model
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01-04-2010)“…PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect…”
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Journal Article -
9
Modeling of SOI-MOSFET with Trap-Rich Substrate for RF Circuit Design
Published in 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (24-09-2024)“…Many efforts have been undertaken to reduce the substrate-coupling effect in RF circuits. It has been demonstrated that a trap-rich layer underneath the BOX…”
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Conference Proceeding -
10
Benchmark Tests for MOSFET Compact Models With Application to the PSP Model
Published in IEEE transactions on electron devices (01-02-2009)“…This paper presents the results of several qualitative ldquobenchmarkrdquo tests that were used to verify the physical behavior of the PSP model and its…”
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Journal Article -
11
A study of ultra-high performance SiGe HBT devices on SOI
Published in 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01-09-2013)“…The authors present a study of SiGe HBTs with F T >200GHz on an SOI substrate for the first time. The devices built on SOI exhibit a degradation of…”
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Conference Proceeding -
12
A 5.4GHz 0.65dB NF 6dBm IIP3 MGTR LNA in 130nm SOI CMOS
Published in 2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (17-01-2021)“…Using a multiple gated transistor core (MGTR) with different channel lengths, a 5.4GHz LNA in 130nm SOI CMOS is demonstrated. Using a 1V supply and consuming…”
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Conference Proceeding -
13
The effect of triple well implant dose on performance of NMOS transistors
Published in IEEE transactions on electron devices (01-03-2002)“…The application of triple well (TW) structures provides important advantages for different types of silicon-integrated circuits. In a triple-well technology,…”
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Journal Article -
14
Benchmarking the PSP Compact Model for MOS Transistors
Published in 2007 IEEE International Conference on Microelectronic Test Structures (01-03-2007)“…Recently, the PSP model was selected as the first surface-potential-based industry standard compact MOSFET model. This work presents the results of several…”
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Conference Proceeding -
15
Analysis and modeling of stress related effects in scaled silicon technology
Published 01-01-1996“…Based on the current understanding of stress related problems in silicon technology, the critical sources of stress in the silicon substrate are identified as…”
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Dissertation -
16
A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI
Published in 2013 IEEE Radio and Wireless Symposium (01-01-2013)“…This paper presents the results of a compact wire-bond SP9T antenna switch that was designed as technology demonstrator for a 2.5 V CMOS, 250 fs Ron-Coff…”
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Conference Proceeding -
17
A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI
Published in 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01-01-2013)“…This paper presents the results of a compact wire-bond SP9T antenna switch that was designed as technology demonstrator for a 2.5 V CMOS, 250 fs Ron-Coff…”
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Conference Proceeding Journal Article -
18
PROCESS TECHNOLOGY CONSIDERATIONS FOR PHY ICs
Published in Electronic Design (17-11-2008)“…A rule of thumb is to multiply the bit rate by 4 to estimate the minimum fsub T/fsub MAX needed. An fsub T/fsub MAX of 40 GHz is generally sufficient for 10…”
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Magazine Article Trade Publication Article -
19
1/f noise in advanced CMOS transistors
Published in IEEE instrumentation & measurement magazine (01-02-2011)“…This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of…”
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Magazine Article -
20
1/f Noise in Advanced CMOSTransistors
Published in IEEE instrumentation & measurement magazine (2011)Get full text
Magazine Article