Search Results - "CHANG, Leland"

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  1. 1

    An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches by Chang, L., Montoye, R.K., Nakamura, Y., Batson, K.A., Eickemeyer, R.J., Dennard, R.H., Haensch, W., Jamsek, D.

    Published in IEEE journal of solid-state circuits (01-04-2008)
    “…An eight-transistor (8T) cell is proposed to improve variability tolerance and low-voltage operation in high-speed SRAM caches. While the cell itself can be…”
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    Journal Article Conference Proceeding
  2. 2

    Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs) by Yoonmyung Lee, Daeyeon Kim, Jin Cai, Lauer, Isaac, Chang, Leland, Koester, Steven J., Blaauw, David, Sylvester, Dennis

    “…The theoretical lower limit of subthreshold swing in mosfets (60 mV/decade) significantly restricts low-voltage operation since it results in a low ON -to- OFF…”
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    Journal Article
  3. 3

    POSTER: Design Space Exploration for Performance Optimization of Deep Neural Networks on Shared Memory Accelerators by Venkataramani, Swagath, Jungwook Choi, Srinivasan, Vijayalakshmi, Gopalakrishnan, Kailash, Leland Chang

    “…The growing prominence and computational challenges imposed by Deep Neural Networks (DNNs) has fueled the design of specialized accelerator architectures and…”
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    Conference Proceeding
  4. 4

    Extremely scaled silicon nano-CMOS devices by Chang, L., Yang-kyu Choi, Ha, D., Ranade, P., Shiying Xiong, Bokor, J., Chenming Hu, King, T.J.

    Published in Proceedings of the IEEE (01-11-2003)
    “…Silicon-based CMOS technology can be scaled well into the nanometer regime. High-performance, planar, ultrathin-body devices fabricated on silicon-on-insulator…”
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    Journal Article
  5. 5

    CMOS circuit performance enhancement by surface orientation optimization by Chang, L., Leong, M., Yang, M.

    Published in IEEE transactions on electron devices (01-10-2004)
    “…With the advent of novel device structures that can be easily fabricated outside of the traditional (100) plane, it may be advantageous to change the crystal…”
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    Journal Article
  6. 6

    Sub-50 nm P-channel FinFET by Xuejue Huang, Wen-Chin Lee, Kuo, C., Hisamoto, D., Leland Chang, Kedzierski, J., Anderson, E., Takeuchi, H., Yang-Kyu Choi, Asano, K., Subramanian, V., Tsu-Jae King, Bokor, J., Chenming Hu

    Published in IEEE transactions on electron devices (01-05-2001)
    “…High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel…”
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    Journal Article
  7. 7

    Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs by Leland Chang, Yang, K.J., Yee-Chia Yeo, Polishchuk, I., Tsu-Jae King, Chenming Hu

    Published in IEEE transactions on electron devices (01-12-2002)
    “…The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum…”
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    Journal Article
  8. 8

    A 4R2W register file for a 2.3GHz wire-speed POWER™ processor with double-pumped write operation by Ditlow, G S, Montoye, R K, Storino, S N, Dance, S M, Ehrenreich, S, Fleischer, B M, Fox, T W, Holmes, K M, Mihara, J, Nakamura, Y, Onishi, S, Shearer, R, Wendel, D, Leland Chang

    “…In multi-ported register files, memory cell size grows quadratically with the total number of ports due to wordline and bitline wiring. Reducing the number of…”
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    Conference Proceeding
  9. 9

    FinFET scaling to 10 nm gate length by Bin Yu, Leland Chang, Ahmed, S., Haihong Wang, Bell, S., Chih-Yuh Yang, Tabery, C., Chau Ho, Qi Xiang, Tsu-Jae King, Bokor, J., Chenming Hu, Ming-Ren Lin, Kyser, D.

    “…While the selection of new "backbone" device structure in the era of post-planar CMOS is open to a few candidates, FinFET and its variants show great potential…”
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    Conference Proceeding
  10. 10

    Operational Amplifier Based Test Structure for Quantifying Transistor Threshold Voltage Variation by Ji, B.L., Pearson, D.J., Lauer, I., Stellari, F., Frank, D.J., Chang, L., Ketchen, M.B.

    “…A new test structure has been developed, which is comprised of MOSFET arrays and an on-chip operational amplifier feedback loop for measuring threshold voltage…”
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    Journal Article
  11. 11

    Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems by Rajendran, B., Yong Liu, Jae-sun Seo, Gopalakrishnan, K., Chang, Leland, Friedman, D. J., Ritter, M. B.

    Published in IEEE transactions on electron devices (01-01-2013)
    “…The goal of neuromorphic engineering is to build electronic systems that mimic the ability of the brain to perform fuzzy, fault-tolerant, and stochastic…”
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    Journal Article
  12. 12
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    BiScaled-DNN: Quantizing Long-tailed Datastructures with Two Scale Factors for Deep Neural Networks by Jain, Shubham, Venkataramani, Swagath, Srinivasan, Vijayalakshmi, Choi, Jungwook, Gopalakrishnan, Kailash, Chang, Leland

    “…Fixed-point implementations (FxP) are prominently used to realize Deep Neural Networks (DNNs) efficiently on energy-constrained platforms. The choice of…”
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    Conference Proceeding
  14. 14

    Operational amplifier based test structure for transistor threshold voltage variation by Ji, B.L., Pearson, D.J., Lauer, I., Stellari, F., Frank, D.J., Chang, L., Ketchen, M.B.

    “…A new test structure has been developed, which is comprised of MOSFET arrays and an on-chip operational amplifier feedback loop for measuring threshold voltage…”
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    Conference Proceeding
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    Moore's law lives on [CMOS transistors] by Leland Chang, Yang-Kyu Choi, Kedzierski, J., Lindert, N., Peiqi Xuan, Bokor, J., Chenming Hu, Tsu-Jae King

    Published in IEEE circuits and devices magazine (01-01-2003)
    “…We discuss several device structures suitable for scaling CMOS devices well into the nano-CMOS era, perhaps down below 10 nm physical gate length. The…”
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    Journal Article
  18. 18

    A Low Ripple Switched-Capacitor Voltage Regulator Using Flying Capacitance Dithering by Suyoung Bang, Jae-sun Seo, Chang, Leland, Blaauw, David, Sylvester, Dennis

    Published in IEEE journal of solid-state circuits (01-04-2016)
    “…In this work, a switched-capacitor voltage regulator (SCVR) that dithers flying capacitance to reduce output voltage ripple is presented, and the benefits of…”
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    Journal Article
  19. 19

    DeepTools: Compiler and Execution Runtime Extensions for RaPiD AI Accelerator by Venkataramani, Swagath, Choi, Jungwook, Srinivasan, Vijayalakshmi, Wang, Wei, Zhang, Jintao, Schaal, Marcel, Serrano, Mauricio J., Ishizaki, Kazuaki, Inoue, Hiroshi, Ogawa, Eri, Ohara, Moriyoshi, Chang, Leland, Gopalakrishnan, Kailash

    Published in IEEE MICRO (01-09-2019)
    “…The ubiquitous adoption of systems specialized for AI requires bridging two seemingly conflicting challenges—the need to deliver extreme processing…”
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    Journal Article
  20. 20

    A 512kb 8T SRAM Macro Operating Down to 0.57V With an AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45nm SOI CMOS by Qazi, Masood, Stawiasz, Kevin, Chang, Leland, Chandrakasan, Anantha P

    Published in IEEE journal of solid-state circuits (01-01-2011)
    “…An 8T SRAM fabricated in 45 nm SOI CMOS exhibits voltage scalable operation from 1.2 V down to 0.57 V with access times from 400 ps to 3.4 ns. Timing variation…”
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    Journal Article