Search Results - "CHANG, Leland"
-
1
An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches
Published in IEEE journal of solid-state circuits (01-04-2008)“…An eight-transistor (8T) cell is proposed to improve variability tolerance and low-voltage operation in high-speed SRAM caches. While the cell itself can be…”
Get full text
Journal Article Conference Proceeding -
2
Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs)
Published in IEEE transactions on very large scale integration (VLSI) systems (01-09-2013)“…The theoretical lower limit of subthreshold swing in mosfets (60 mV/decade) significantly restricts low-voltage operation since it results in a low ON -to- OFF…”
Get full text
Journal Article -
3
POSTER: Design Space Exploration for Performance Optimization of Deep Neural Networks on Shared Memory Accelerators
Published in 2017 26th International Conference on Parallel Architectures and Compilation Techniques (PACT) (01-09-2017)“…The growing prominence and computational challenges imposed by Deep Neural Networks (DNNs) has fueled the design of specialized accelerator architectures and…”
Get full text
Conference Proceeding -
4
Extremely scaled silicon nano-CMOS devices
Published in Proceedings of the IEEE (01-11-2003)“…Silicon-based CMOS technology can be scaled well into the nanometer regime. High-performance, planar, ultrathin-body devices fabricated on silicon-on-insulator…”
Get full text
Journal Article -
5
CMOS circuit performance enhancement by surface orientation optimization
Published in IEEE transactions on electron devices (01-10-2004)“…With the advent of novel device structures that can be easily fabricated outside of the traditional (100) plane, it may be advantageous to change the crystal…”
Get full text
Journal Article -
6
Sub-50 nm P-channel FinFET
Published in IEEE transactions on electron devices (01-05-2001)“…High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel…”
Get full text
Journal Article -
7
Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs
Published in IEEE transactions on electron devices (01-12-2002)“…The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum…”
Get full text
Journal Article -
8
A 4R2W register file for a 2.3GHz wire-speed POWER™ processor with double-pumped write operation
Published in 2011 IEEE International Solid-State Circuits Conference (01-02-2011)“…In multi-ported register files, memory cell size grows quadratically with the total number of ports due to wordline and bitline wiring. Reducing the number of…”
Get full text
Conference Proceeding -
9
FinFET scaling to 10 nm gate length
Published in Digest. International Electron Devices Meeting (2002)“…While the selection of new "backbone" device structure in the era of post-planar CMOS is open to a few candidates, FinFET and its variants show great potential…”
Get full text
Conference Proceeding -
10
Operational Amplifier Based Test Structure for Quantifying Transistor Threshold Voltage Variation
Published in IEEE transactions on semiconductor manufacturing (01-02-2009)“…A new test structure has been developed, which is comprised of MOSFET arrays and an on-chip operational amplifier feedback loop for measuring threshold voltage…”
Get full text
Journal Article -
11
Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems
Published in IEEE transactions on electron devices (01-01-2013)“…The goal of neuromorphic engineering is to build electronic systems that mimic the ability of the brain to perform fuzzy, fault-tolerant, and stochastic…”
Get full text
Journal Article -
12
Efficient AI System Design With Cross-Layer Approximate Computing
Published in Proceedings of the IEEE (01-12-2020)“…Advances in deep neural networks (DNNs) and the availability of massive real-world data have enabled superhuman levels of accuracy on many AI tasks and ushered…”
Get full text
Journal Article -
13
BiScaled-DNN: Quantizing Long-tailed Datastructures with Two Scale Factors for Deep Neural Networks
Published in 2019 56th ACM/IEEE Design Automation Conference (DAC) (01-06-2019)“…Fixed-point implementations (FxP) are prominently used to realize Deep Neural Networks (DNNs) efficiently on energy-constrained platforms. The choice of…”
Get full text
Conference Proceeding -
14
Operational amplifier based test structure for transistor threshold voltage variation
Published in 2008 IEEE International Conference on Microelectronic Test Structures (01-03-2008)“…A new test structure has been developed, which is comprised of MOSFET arrays and an on-chip operational amplifier feedback loop for measuring threshold voltage…”
Get full text
Conference Proceeding -
15
A 7-nm Four-Core Mixed-Precision AI Chip With 26.2-TFLOPS Hybrid-FP8 Training, 104.9-TOPS INT4 Inference, and Workload-Aware Throttling
Published in IEEE journal of solid-state circuits (01-01-2022)“…Reduced precision computation is a key enabling factor for energy-efficient acceleration of deep learning (DL) applications. This article presents a 7-nm…”
Get full text
Journal Article -
16
Power-Limited Inference Performance Optimization Using a Software-Assisted Peak Current Regulation Scheme in a 5-nm AI SoC
Published in IEEE journal of solid-state circuits (18-10-2024)“…Discrete AI inference cards, operating under form-factor and system-defined peak power constraints, must serve diverse inference requests with widely varying…”
Get full text
Journal Article -
17
Moore's law lives on [CMOS transistors]
Published in IEEE circuits and devices magazine (01-01-2003)“…We discuss several device structures suitable for scaling CMOS devices well into the nano-CMOS era, perhaps down below 10 nm physical gate length. The…”
Get full text
Journal Article -
18
A Low Ripple Switched-Capacitor Voltage Regulator Using Flying Capacitance Dithering
Published in IEEE journal of solid-state circuits (01-04-2016)“…In this work, a switched-capacitor voltage regulator (SCVR) that dithers flying capacitance to reduce output voltage ripple is presented, and the benefits of…”
Get full text
Journal Article -
19
DeepTools: Compiler and Execution Runtime Extensions for RaPiD AI Accelerator
Published in IEEE MICRO (01-09-2019)“…The ubiquitous adoption of systems specialized for AI requires bridging two seemingly conflicting challenges—the need to deliver extreme processing…”
Get full text
Journal Article -
20
A 512kb 8T SRAM Macro Operating Down to 0.57V With an AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45nm SOI CMOS
Published in IEEE journal of solid-state circuits (01-01-2011)“…An 8T SRAM fabricated in 45 nm SOI CMOS exhibits voltage scalable operation from 1.2 V down to 0.57 V with access times from 400 ps to 3.4 ns. Timing variation…”
Get full text
Journal Article