Search Results - "CHALKER, P. R"

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM by Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., Gibbon, J. T., Dhanak, V. R., Zhang, W. D., Zhang, J. F., Robertson, J., Hall, S., Chalker, P. R.

“…The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is…”
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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping by Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., Gibbon, J. T., Dhanak, V. R., Zhang, W. D., Zhang, J. F., Hall, S., Robertson, J., Chalker, P. R.

“…The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to…”
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Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements by Tao, J, Zhao, C Z, Zhao, C, Taechakumput, P, Werner, M, Taylor, S, Chalker, P R

“…In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant…”
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Band alignments at Ga2O3 heterojunction interfaces with Si and Ge by Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, Ivona Z., Dhanak, V. R.

“…Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray…”
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Embedded fibre Bragg grating sensors in advanced composite materials by Kuang, K.S.C., Kenny, R., Whelan, M.P., Cantwell, W.J., Chalker, P.R.

“…Fibre Bragg grating (FBG) sensors have been embedded in a number of advanced composite materials and fibre/metal laminates (FMLs). The post-fabrication FBG…”
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Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes by Willcocks, A. M, Pugh, T, Cosham, S. D, Hamilton, J, Sung, S. L, Heil, T, Chalker, P. R, Williams, P. A, Kociok-Köhn, G, Johnson, A. L

“…We report here the synthesis and characterization of a family of copper­(I) metal precursors based around cyclopentadienyl and isocyanide ligands. The…”
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Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics by Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., Potter, R. J.

“…We report the photochemical atomic layer deposition of Al2O3 thin films and the use of this process to achieve area-selective film deposition. A shuttered…”
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Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer by Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.

“…Gallium nitride was deposited using metal-organic vapour-phase epitaxy (MOVPE) on Si(1 1 1) substrates, using buffer layers of scandium nitride grown by…”
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Selective laser sintering of barium titanate–polymer composite films by Clare, A. T, Chalker, P. R, Davies, S, Sutcliffe, C. J, Tsopanos, S

“…A selective laser sintering process has been used to consolidate electro-ceramic thin films on silicon substrates. Methods of forming pre-positioned layers of…”
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Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3 by Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., Martin, R. W., Massabuau, F. C.-P.

“…Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy…”
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Compositional tuning of atomic layer deposited MgZnO for thin film transistors by Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., Hall, S.

“…Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of…”
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Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires by Lari, L., Walther, T., Gass, M.H., Geelhaar, L., Chèze, C., Riechert, H., Bullough, T.J., Chalker, P.R.

“…A study of GaN–AlGaN nanowire heterostructures grown by molecular beam epitaxy on sapphire substrates is presented. Nanowire growth was promoted using nickel…”
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Photochemical atomic layer deposition and etching by Chalker, P.R.

“…Conventional atomic layer deposition (ALD) is a thermo-chemical process that is now used extensively in the manufacture of ultrathin films. In addition to…”
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Atomic layer deposition of Nb-doped ZnO for thin film transistors by Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., Dhanak, V. R., Chalker, P. R., Hall, S.

“…We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were…”
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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics by Gottlob, H.D.B., Schmidt, M., Stefani, A., Lemme, M.C., Kurz, H., Mitrovic, I.Z., Davey, W.M., Hall, S., Werner, M., Chalker, P.R., Cherkaoui, K., Hurley, P.K., Piscator, J., Engström, O., Newcomb, S.B.

“…We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high- k gate dielectric in a gate first integration scheme. There silicon…”
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Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE by Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., Dimitrakopulos, G. P., Kehagias, Th, Komninou, Ph, Karakostas, Th, Chèze, C., Geelhaar, L., Riechert, H.

“…We report on transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) analysis of GaN and Al0.2Ga0.8N nanowires (NWs) grown…”
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Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct by Kanjolia, R., Jones, A.C., Ashraf, S., Bacsa, J., Black, K., Chalker, P.R., Beahan, P., Hindley, S., Odedra, R., Williams, P.A., Heys, P.N.

“…The dimethylzinc adduct [Me 2Zn(1,4-dioxane)] has been used for the growth of vertically aligned ZnO nanowires by liquid injection MOCVD. The ZnO nanowires…”
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Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices by Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., Chalker, P. R.

“…The fabrication of free-standing GaN cantilevers on Si(111) is demonstrated, and the growth of III-nitride epilayers on silicon (111) using an AlN buffer layer…”
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Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics by Roberts, J. W., Chalker, P. R., Lee, K. B., Houston, P. A., Cho, S. J., Thayne, I. G., Guiney, I., Wallis, D., Humphreys, C. J.

“…We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field…”
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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition by Roberts, J.W., Chalker, P.R., Ding, B., Oliver, R.A., Gibbon, J.T., Jones, L.A.H., Dhanak, V.R., Phillips, L.J., Major, J.D., Massabuau, F.C.-P.

“…•α-Ga2O3 can be grown directly from 200 °C to 400 °C; lower than for other techniques.•Morphology of Ga2O3 grown on sapphire by PEALD depends on the growth…”
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