Search Results - "CALUWAERTS, R"

Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch by Chiarella, T., Matagne, P., Mertens, H., Hosseini, M., Zhou, X., Eyben, P., Arimura, H., Gupta, A., Richard, O., Drijbooms, C., Caluwaerts, R., Horiguchi, N., Mitard, J.

“…This work provides keys for optimizing nanosheet-based monolithic Complementary Field-Effect Transistors below 50nm gate pitch, relevant to industry "sub-nm"…”
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Materials characterization of WNxCy, WNx and WCx films for advanced barriers by Volders, H, Tokei, Z, Bender, H, Brijs, B, Caluwaerts, R, Carbonell, L, Conard, T, Drijbooms, C, Franquet, A, Garaud, S, Hoflijk, I, Moussa, A, Sinapi, F, Travaly, Y, Vanhaeren, D, Vereecke, G, Zhao, C, Li, W-M, Sprey, H

“…A ternary WNxCy system was deposited in a thermal ALD (atomic layer deposition) reactor from ASM at 300 deg C in a process sequence using tungsten hexafluoride…”
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Dry oxidation mechanisms of copper in trenches by Carbonell, L, Ratchev, P, Caluwaerts, R, Van Hove, M, Verlinden, B, Maex, K

“…The effect of trace oxygen on the annealing of Cu/Ta(N)/SiO 2/Si(001) damascene structures was studied. The dry oxidation of copper was investigated by…”
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Self-aligned multi-level air gap integration by Hoofman, R.J.O.M., Caluwaerts, R., Michelon, J., Herrero Bernabé, P., Gueneau de Mussy, J.P., Bruynseraede, C., Lee, J.M., List, S., Bancken, P.H.L., Beyer, G.

“…Dual damascene self-aligned air gap structures have been fabricated through selective removal of interline plasma-damaged SiOC material using dilute HF…”
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Scaling down thickness of ULK materials for 65 nm node and below and its effect on electrical performance by Frühauf, S., Himcinschi, C., Rennau, M., Schulze, K., Schulz, S.E., Friedrich, M., Gessner, T., Zahn, D.R.T., Le, Q.T., Caluwaerts, R.

“…The target of our investigation is the evaluation of the effect of decreasing thickness on the relative permittivity of dielectric films for high advanced…”
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Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performance by Frühauf, S., Himcinschi, C., Rennau, M., Schulze, K., Schulz, S.E., Friedrich, M., Gessner, T., Zahn, D.R.T., Le, Q.T., Caluwaerts, R.

“…The target of our investigation is the evaluation of the effect of decreasing thickness on the relative permittivity of dielectric films for high advanced…”
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Electrical characterization of CNT contacts with Cu Damascene top contact by van der Veen, Marleen H., Vereecke, Bart, Huyghebaert, Cedric, Cott, Daire J., Sugiura, Masahito, Kashiwagi, Yusaku, Teugels, Lieve, Caluwaerts, Rudy, Chiodarelli, Nicolò, Vereecken, Philippe M., Beyer, Gerald P., Heyns, Marc M., De Gendt, Stefan, Tökei, Zsolt

“…Carbon nanotubes (CNTs) were integrated successfully into 150nm contact holes having a TiN underlayer and a Cu single damascene top contact module. All the…”
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Post patterning meso porosity creation: a potential solution for pore sealing by Caluwaerts, R., Van Hove, M., Beyer, G., Hoofman, R.J.O.M., Struyf, H., Verheyden, G.J.A.M., Waeterloos, J., Tokei, Z., Iacopi, F., Carbonell, L., Le, Q.T., Das, A., Vos, I., Demuynck, S., Maex, K.

“…The creation of meso porosity in single damascene structures after patterning has been investigated to facilitate the sealing of the sidewalls by iPVD…”
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Integration feasibility of porous SiLK semiconductor dielectric by Waeterloos, J.J., Struyf, H., Van Aelst, J., Castillo, D.W., Lucero, S., Caluwaerts, R., Alaerts, C., Mannaert, G., Boullart, W., Sleeckx, E., Schaekers, M., Tokel, Z., Vervoort, I., Steenbergen, J., Sijmus, B., Vos, I., Meuris, M., Iacopi, F., Donaton, R.A., Van Hove, M., Vanhaelemeersch, S., Maex, K.

“…The feasibility of integrating a SiLK* Semiconductor Dielectric film (*trademark of The Dow Chemical Company) that contains closed pores was studied using a…”
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Materials characterization of WN x C y , WN x and WC x films for advanced barriers by Volders, H., Tökei, Z., Bender, H., Brijs, B., Caluwaerts, R., Carbonell, L., Conard, T., Drijbooms, C., Franquet, A., Garaud, S., Hoflijk, I., Moussa, A., Sinapi, F., Travaly, Y., Vanhaeren, D., Vereecke, G., Zhao, C., Li, W.-M., Sprey, H., Jonas, A.M.

“…A ternary WN x C y system was deposited in a thermal ALD (atomic layer deposition) reactor from ASM at 300 °C in a process sequence using tungsten hexafluoride…”
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Integration of a low permittivity spin-on embedded hardmask for Cu/SiLK resin dual damascene by Waeterloos, J.J., Shaffer, E.O., Stokich, T., Hetzner, J., Price, D., Booms, L., Donaton, R.A., Beyer, G., Coenegrachts, B., Caluwaerts, R., Struyf, H., Tokei, Z.S., Vervoort, I., Sijmus, B., Vos, I., Maex, K., Komiya, T., Iwashita, M.

“…The feasibility of integrating a low permittivity spin-on hardmask (SoHM) into a Cu dual damascene structure using SiLK* Semiconductor Resin (*trademark of The…”
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Reliability Characterization of Different Pore Sealing Techniques on Porous Silk Dielectric Films by Michelon, J., Waeterloos, J., Bancken, P.H.L., Nguyen, V.H., Caluwaerts, R., Beyer, G., Rozeveld, S., Beach, E., Hoofman, R.J.O.M.

“…As device dimensions scale down, the back-end-of-line dimensions scale down as well, which results in an increasing resistance-capacitance delay of the…”
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Materials characterization of WNxCy, WNxand WCx films for advanced barriers by VOLDERS, H, TOKEI, Z, HOFLIJK, I, MOUSSA, A, SINAPI, F, TRAVALY, Y, VANHAEREN, D, VEREECKE, G, ZHAO, C, LI, W.-M, SPREY, H, JONAS, A. M, BENDER, H, BRIJS, B, CALUWAERTS, R, CARBONELL, L, CONARD, T, DRIJBOOMS, C, FRANQUET, A, GARAUD, S

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An evaluation of three new colour vision tests by Verriest, G, Caluwaerts, M R

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Metallization of sub-30 nm interconnects: Comparison of different liner/seed combinations by Carbonell, L., Volders, H., Heylen, N., Kellens, K., Caluwaerts, R., Devriendt, K., Sanchez, E.A., Wouters, J., Gravey, V., Shah, K., Luo, Q., Sundarrajan, A., Jiang Lu, Aubuchon, J., Ma, P., Narasimhan, M., Cockburn, A., Tokei, Z., Beyer, G.P.

“…Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta,…”
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