Search Results - "CALCOTT, P. D. J"

First-principles calculations of the electronic properties of silicon quantum wires by READ, A. J, NEEDS, R. J, NASH, K. J, CANHAM, L. T, CALCOTT, P. D. J, QTEISH, A

“…First-principles pseudopotential calculations have been performed for H-terminated Si wires with thicknesses from 12 to 23 A, calculating the band gaps and…”
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Tri-isopropyl gallium : a very promising precursor for chemical beam epitaxy by LANE, P. A, MARTIN, T, FREER, R. W, CALCOTT, P. D. J, WHITEHOUSE, C. R, JONES, A. C, RUSHWORTH, S

“…The first reported use of tri-isopropyl gallium (TiPGa) in chemical beam epitaxy (CBE) is described. Hall measurements performed on the resulting undoped GaAs…”
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Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run by Balmer, R.S., Heaton, J.M., Maclean, J.O., Ayling, S.G., Newey, J.P., Houlton, M., Calcott, P.D.J., Wight, D.R., Martin, T.

“…Next-generation optical-communications systems require on-wafer integration of active and passive opto-electronic components to increase operating speed and…”
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Relationship between storage media and blue photoluminescence for oxidized porous silicon by Loni, A., Simons, A. J., Calcott, P. D. J., Newey, J. P., Cox, T. I., Canham, L. T.

“…Blue photoluminescence is observed, with nanosecond decay time, from rapid thermally oxidized porous silicon as a result of accelerated aging in plastic…”
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Spin-orbit interaction, triplet lifetime, and fine-structure splitting of excitons in highly porous silicon by Nash, KJ, Calcott, PD, Canham, LT, Needs, RJ

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Optimization of the growth parameters for the molecular-beam epitaxial growth of strained In0.16Ga0.84As/Al0.33Ga0.67As single quantum-well structures by EMENY, M. T, SKOLNICK, M. S, WHITEHOUSE, C. R, HAYES, D. G, CALCOTT, P. D. J, HIGGS, A. W

“…A systematic study of the optical properties of strained InxGa1−xAs/AlyGa1−yAs (x=0.16, y=0.33) single quantum-well structures grown by molecular-beam epitaxy…”
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On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon by Canham, L.T, Loni, A, Calcott, P.D.J, Simons, A.J, Reeves, C, Houlton, M.R, Newey, J.P, Nash, K.J, Cox, T.I

“…When heavily oxidized porous silicon is stored in ambient air for prolonged periods, a broad blue photoluminescence band with nanosecond decay times gradually…”
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The mechanism of light emission from porous silicon: where are we 7 years on? by Calcott, P.D.J

“…This paper aims to offer a judgement on the origin of the efficient visible photoluminescence (PL) from porous silicon in light of the mass of evidence now…”
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Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy by Maclean, J. O., Martin, T., Houlton, M. R., Calcott, P. D. J., Ayling, S. G., Hilton, K. P., Rushworth, S. A., Smith, L. M.

“…Metalorganic compounds used as precursors for epitaxial growth by metalorganic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE), may be contaminated…”
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The electrical properties of porous silicon produced from n + silicon substrates by Simons, A.J., Cox, T.I., Uren, M.J., Calcott, P.D.J.

“…Current transport through porous silicon (PS) films of 50% porosity fabricated from n-type (0.018 Ωcm) substrates has been studied. This has been achieved by…”
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Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE) by Balmer, R.S, Martin, T, Kane, M.J, Maclean, J.O, Whitaker, T.J, Ayling, S.G, Calcott, P.D.J, Houlton, M, Newey, J.P, O'Mahony, S.J

“…An integration concept which involves the selective deposition of quantum wells in spatially selected areas of a wafer and in the middle of a waveguide…”
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First-Principles Calculations of the Electronic Properties of Silicon Quantum Wires by Read, A. J., Needs, R. J., Nash, K. J., Canham, L. T., Calcott, P. D. J., Qteish, A.

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Chemical beam epitaxial growth of high optical quality AlGaAs — the influence of precursor purity on material properties by Freer, R.W., Martin, T., Lane, P.A., Whitehouse, C.R., Whitaker, T.J., Houlton, M., Calcott, P.D.J., Lee, D., Jones, A.C., Rushworth, S.A.

“…The influence of source precursor purity on the quality of resulting chemical beam epitaxy (CBE) grown AlGaAs epilayers has been investigated. A close…”
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