Search Results - "C. Pfahler, C. Pfahler"
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Etching Masks Based on Miniemulsions: A Novel Route Towards Ordered Arrays of Surface Nanostructures
Published in Advanced materials (Weinheim) (21-05-2007)“…Platinum‐complex‐loaded colloidal polystyrene particles are prepared by a miniemulsion technique and deposited on silica in hexagonally ordered monolayers…”
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Jumping nanodroplets: a new route towards metallic nano-particles
Published in Applied physics. A, Materials science & processing (01-11-2008)“…The dewetting process, which appears upon laser-induced melting of flat nanostructures and leads to a jumping of the droplets off the surface, is used for…”
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GaSb-based tapered diode lasers at 1.93 [mu]m with 1.5-W nearly diffraction-limited power
Published in IEEE photonics technology letters (15-03-2006)Get full text
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GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power
Published in IEEE photonics technology letters (15-03-2006)“…High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A…”
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Amides Are Novel Protein Modifications Formed by Physiological Sugars
Published in The Journal of biological chemistry (09-11-2001)“…The Maillard reaction, or nonenzymatic browning, proceeds in vivo, and the resulting protein modifications (advanced glycation end products) have been…”
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Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section
Published in Applied physics letters (10-07-2006)“…(AlGaIn)(AsSb) ridge-waveguide tapered diode lasers with separately contacted ridge and tapered sections, emitting at 1.93 μ m , have been analyzed in pulsed…”
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GaSb-based tapered diode lasers at 1.93 mum with 1.5-W nearly diffraction-limited power
Published in IEEE photonics technology letters (15-03-2006)“…High-power high-brightness 1.93-mum wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A…”
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Synthesis of 1-deoxy- d- erythro-hexo-2,3-diulose, a major hexose Maillard intermediate
Published in Carbohydrate research (17-11-2000)“…1-Deoxy- d- erythro-hexo-2,3-diulose (1-DG) was prepared by the reaction of ethoxyvinyllithium with an erythronolactone derivative. Characterization by 1H and…”
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Detection of dideoxyosone intermediates of glycation using a monoclonal antibody: Characterization of major epitope structures
Published in Archives of biochemistry and biophysics (15-02-2006)“…Glycation or the Maillard reaction in proteins forms advanced glycation end products (AGEs) that contribute to age- and diabetes-associated changes in tissues…”
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Dopant Activation and Deactivation Phenomena during Advanced Millisecond Anneal Cycles
Published in 2016 21st International Conference on Ion Implantation Technology (IIT) (01-09-2016)“…Achieving very high concentrations of electrically active dopants is essential for minimizing parasitic resistances in advanced CMOS devices. Existing methods…”
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Conference Proceeding -
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Amides are novel protein modifications formed by physiological sugars
Published in International Congress series (01-11-2002)“…The elucidation of structure and formation of AGEs is of major interest to understand related pathophysiologies, such as the late complications in diabetes,…”
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Reductones participate in redox reactions during amine-catalyzed sugar degradation
Published in International Congress series (01-11-2002)“…The term Maillard reaction stands as a synonym for the complicated reaction pathways of reducing sugars with amines [1]. Within this context, redox reactions…”
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High-brightness GaSb-based tapered diode-lasers emitting at 1.9 /spl mu/m
Published in CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005 (2005)“…We have presented the results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples…”
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Conference Proceeding -
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High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9 /spl mu/m
Published in The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004 (2004)“…This study presents results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples…”
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Conference Proceeding -
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High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9 μm
Published 2004Get full text
Conference Proceeding