Search Results - "Cüppers, F."

Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior by Cüppers, F., Menzel, S., Bengel, C., Hardtdegen, A., von Witzleben, M., Böttger, U., Waser, R., Hoffmann-Eifert, S.

“…The utilization of bipolar-type memristive devices for the realization of synaptic connectivity in neural networks strongly depends on the ability of the…”
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Design of defect-chemical properties and device performance in memristive systems by Lübben, M., Cüppers, F., Mohr, J., von Witzleben, M., Breuer, U., Waser, R., Neumann, C., Valov, I.

“…Impurities and dopants in memristive devices determine their switching kinetics, performance, and neuromorphic functionalities. Future development of the…”
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Engineering the kinetics of redox-based memristive devices for neuromorphic computing by Dittmann, R., Sarantopoulos, A., Bengel, C., Gutsche, A., Cuppers, F., Hoffmann-Eifert, S., Menzel, S.

“…For neuromorphic computing applications, analog programming characteristics with linear updates are highly desirable. Here, we discuss the relation between the…”
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Effect of electron conduction on the read noise characteristics in ReRAM devices by Schnieders, K., Funck, C., Cüppers, F., Aussen, S., Kempen, T., Sarantopoulos, A., Dittmann, R., Menzel, S., Rana, V., Hoffmann-Eifert, S., Wiefels, S.

“…The read variability of redox based resistive random access memory is one of the key characteristics with regard to its application in both data storage and…”
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Characterization of HfO2/TiOx ReRAM Cells in Pulse Operation Mode by Hardtdegen, A., Cuppers, F., von Witzleben, M., Bottger, U., Menzel, S., Waser, R., Hoffmann-Eifert, S.

“…Redox-based resistive random access memories (ReRAM) are promising candidates for the use in 'beyond-von Neumann' architectures. One key issue for utilizing…”
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