Search Results - "Byungwhan Kim"
-
1
Deposition rate of SiN film grown by using a pulsed-PECVD at room-temperature
Published in Current applied physics (01-05-2010)“…Using a pulsed-plasma enhanced chemical vapor deposition, silicon nitride (SiN) films were deposited in SiH 4–NH 3 plasma at room-temperature. The bias power…”
Get full text
Journal Article -
2
Modeling of plasma process data using a multi-parameterized generalized regression neural network
Published in Microelectronic engineering (2009)“…For characterization or optimization process, a computer prediction model is in demand. A new technique, to improve the prediction performance of conventional…”
Get full text
Journal Article -
3
Room-temperature high radio-frequency source power effects on silicon nitride films deposited by using a plasma-enhanced chemical vapor deposition
Published in Metals and materials international (01-10-2008)“…Silicon nitride films were deposited at room temperature using a plasma-enhanced chemical vapor deposition system. In this study, the effects of radio…”
Get full text
Journal Article -
4
Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature
Published in Current applied physics (01-05-2010)“…Using a radio frequency (rf) pulsed-plasma enhanced chemical vapor deposition system, silicon nitride (SiN) films were deposited in a SiH4–N2 inductively…”
Get full text
Journal Article -
5
Modeling of a hemispherical inductively coupled plasma using neural network
Published in Current applied physics (2009)“…In this study, a hemispherical inductively coupled plasma (HICP) was modeled by using a neural network called a radial basis function network (RBFN). The…”
Get full text
Journal Article -
6
Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition
Published in Metals and materials international (01-10-2009)“…Silicon nitride films were deposited at room temperature in a plasma-enhanced chemical vapor deposition system. Ion energy and ion energy flux were measured…”
Get full text
Journal Article -
7
Prediction on the seasonal behavior of hydrogen sulfide using a neural network model
Published in TheScientificWorld (05-05-2011)“…Models to predict seasonal hydrogen sulfide (H2S) concentrations were constructed using neural networks. To this end, two types of generalized regression…”
Get full text
Journal Article -
8
Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4–NH3–N2 pulsed plasma
Published in Current applied physics (01-05-2010)“…Using a pulsed-plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited at room temperature in SiH4–NH3–N2 plasma. The impact of…”
Get full text
Journal Article -
9
Functional Kernel-Based Modeling of Wavelet Compressed Optical Emission Spectral Data: Prediction of Plasma Etch Process
Published in IEEE sensors journal (01-03-2010)“…This study reports the use of a kernel-based process model, consisting of kernel partial least squares regression and kernel ridge regression, to model etch…”
Get full text
Journal Article -
10
Prediction of profile surface roughness in CHF3/CF4 plasma using neural network
Published in Applied surface science (30-01-2004)“…Using a neural network, a profile roughness of plasma etching is characterized. The etching was conducted in a CHF3/CF4 inductively coupled plasma. The etch…”
Get full text
Journal Article -
11
Prediction of SiC etching in a NF3∕CH4 plasma using neural network
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2004)“…Silicon carbide (SiC) was etched in a NF3∕CH4 inductively coupled plasma. The etch process was modeled by using a neural network called generalized regression…”
Get full text
Journal Article -
12
Measurement of surface roughness of plasma-deposited films using laser speckles
Published in Applied surface science (30-12-2015)“…•This work presents a new method for characterizing surface roughness of deposited films.•It quantifies pixel information representing speckle pattern in terms…”
Get full text
Journal Article -
13
Visualization of atom's orbits
Published in Journal of nanoscience and nanotechnology (01-02-2014)“…High-resolution imaging techniques have been used to obtain views of internal shapes of single atoms or columns of atoms. This review article focuses on the…”
Get more information
Journal Article -
14
Characterization of inductively coupled plasma using neural networks
Published in IEEE transactions on plasma science (01-04-2002)“…Hemispherical inductively coupled plasma (HICP) in a chlorine (Cl/sub 2/) discharge is qualitatively characterized using neural networks. Plasma attributes…”
Get full text
Journal Article -
15
Prediction of plasma etching using a polynomial neural network
Published in IEEE transactions on plasma science (01-12-2003)“…A polynomial neural network (PNN) is first applied to construct a predictive model of plasma etch processes. The process was characterized by a full-factorial…”
Get full text
Journal Article -
16
Relationships between etch rate and roughness of plasma etched surface
Published in IEEE transactions on plasma science (01-10-2002)“…Relationships between etch rate and surface roughness are examined as a function of process factors, including source power, bias power, pressure, and O/sub 2/…”
Get full text
Journal Article -
17
Qualitative fuzzy logic model of plasma etching process
Published in IEEE transactions on plasma science (01-04-2002)“…Plasma etching is key to transferring fine patterns. Accurate prediction models are highly demanded to gain improved insights into plasma discharges, as well…”
Get full text
Journal Article -
18
Modeling plasma equipment using neural networks
Published in IEEE transactions on plasma science (01-02-2001)“…Equipment plasma has been modeled semi-empirically using neural networks in conjunction with statistical experimental design. A 3/sup 3/ factorial design was…”
Get full text
Journal Article -
19
Modeling etch rate and uniformity of oxide via etching in a CHF3/CF4 plasma using neural networks
Published in Thin solid films (24-02-2003)“…An oxide film etched in a magnetically-enhanced CHF3/CF4 plasma has been modeled using neural networks. The etch process was characterized with a 24-1…”
Get full text
Journal Article -
20
Proximity-controlled silicon carbide etching in inductively coupled plasma
Published in Thin solid films (23-06-2003)“…By controlling the proximity relative to plasma source, silicon carbide (SiC) has been etched in a C 2F 6 inductively coupled plasma. This was accomplished by…”
Get full text
Journal Article