Search Results - "Byungwhan Kim"

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  1. 1

    Deposition rate of SiN film grown by using a pulsed-PECVD at room-temperature by Kim, Suyeon, Kim, Byungwhan

    Published in Current applied physics (01-05-2010)
    “…Using a pulsed-plasma enhanced chemical vapor deposition, silicon nitride (SiN) films were deposited in SiH 4–NH 3 plasma at room-temperature. The bias power…”
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    Journal Article
  2. 2

    Modeling of plasma process data using a multi-parameterized generalized regression neural network by Kim, Byungwhan, Kwon, Minji, Kwon, Sang Hee

    Published in Microelectronic engineering (2009)
    “…For characterization or optimization process, a computer prediction model is in demand. A new technique, to improve the prediction performance of conventional…”
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  3. 3

    Room-temperature high radio-frequency source power effects on silicon nitride films deposited by using a plasma-enhanced chemical vapor deposition by Kim, Byungwhan, Kim, Suyeon

    Published in Metals and materials international (01-10-2008)
    “…Silicon nitride films were deposited at room temperature using a plasma-enhanced chemical vapor deposition system. In this study, the effects of radio…”
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  4. 4

    Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature by Lee, Hwajune, Kim, Byungwhan, Kwon, Sanghee

    Published in Current applied physics (01-05-2010)
    “…Using a radio frequency (rf) pulsed-plasma enhanced chemical vapor deposition system, silicon nitride (SiN) films were deposited in a SiH4–N2 inductively…”
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  5. 5

    Modeling of a hemispherical inductively coupled plasma using neural network by Kim, Byungwhan, Kim, Suyeon

    Published in Current applied physics (2009)
    “…In this study, a hemispherical inductively coupled plasma (HICP) was modeled by using a neural network called a radial basis function network (RBFN). The…”
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  6. 6

    Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition by Kim, Suyean, Kim, Byungwhan

    Published in Metals and materials international (01-10-2009)
    “…Silicon nitride films were deposited at room temperature in a plasma-enhanced chemical vapor deposition system. Ion energy and ion energy flux were measured…”
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    Journal Article
  7. 7

    Prediction on the seasonal behavior of hydrogen sulfide using a neural network model by Kim, Byungwhan, Lee, Joogong, Jang, Jungyoung, Han, Dongil, Kim, Ki-Hyun

    Published in TheScientificWorld (05-05-2011)
    “…Models to predict seasonal hydrogen sulfide (H2S) concentrations were constructed using neural networks. To this end, two types of generalized regression…”
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  8. 8

    Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4–NH3–N2 pulsed plasma by Kwon, Sanghee, Lee, Hwajun, Kim, Byungwhan

    Published in Current applied physics (01-05-2010)
    “…Using a pulsed-plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited at room temperature in SiH4–NH3–N2 plasma. The impact of…”
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    Journal Article
  9. 9

    Functional Kernel-Based Modeling of Wavelet Compressed Optical Emission Spectral Data: Prediction of Plasma Etch Process by Ko, Young-Don, Jeong, Young-Seon, Jeong, Myong-Kee, Garcia-Diaz, Alberto, Kim, Byungwhan

    Published in IEEE sensors journal (01-03-2010)
    “…This study reports the use of a kernel-based process model, consisting of kernel partial least squares regression and kernel ridge regression, to model etch…”
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  10. 10

    Prediction of profile surface roughness in CHF3/CF4 plasma using neural network by Kim, Byungwhan, Kim, Kunho

    Published in Applied surface science (30-01-2004)
    “…Using a neural network, a profile roughness of plasma etching is characterized. The etching was conducted in a CHF3/CF4 inductively coupled plasma. The etch…”
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  11. 11

    Prediction of SiC etching in a NF3∕CH4 plasma using neural network by Kim, Byungwhan, Lee, Byung Teak

    “…Silicon carbide (SiC) was etched in a NF3∕CH4 inductively coupled plasma. The etch process was modeled by using a neural network called generalized regression…”
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  12. 12

    Measurement of surface roughness of plasma-deposited films using laser speckles by Kim, Byungwhan, Seo, Junhyun

    Published in Applied surface science (30-12-2015)
    “…•This work presents a new method for characterizing surface roughness of deposited films.•It quantifies pixel information representing speckle pattern in terms…”
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  13. 13

    Visualization of atom's orbits by Kim, Byungwhan

    Published in Journal of nanoscience and nanotechnology (01-02-2014)
    “…High-resolution imaging techniques have been used to obtain views of internal shapes of single atoms or columns of atoms. This review article focuses on the…”
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  14. 14

    Characterization of inductively coupled plasma using neural networks by Kim, Byungwhan, Park, Sungjin

    Published in IEEE transactions on plasma science (01-04-2002)
    “…Hemispherical inductively coupled plasma (HICP) in a chlorine (Cl/sub 2/) discharge is qualitatively characterized using neural networks. Plasma attributes…”
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  15. 15

    Prediction of plasma etching using a polynomial neural network by Kim, Byungwhan, Kim, Dong Won, Park, Gwi Tae

    Published in IEEE transactions on plasma science (01-12-2003)
    “…A polynomial neural network (PNN) is first applied to construct a predictive model of plasma etch processes. The process was characterized by a full-factorial…”
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  16. 16

    Relationships between etch rate and roughness of plasma etched surface by KIM, Byungwhan, LEE, Byung-Teak

    Published in IEEE transactions on plasma science (01-10-2002)
    “…Relationships between etch rate and surface roughness are examined as a function of process factors, including source power, bias power, pressure, and O/sub 2/…”
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  17. 17

    Qualitative fuzzy logic model of plasma etching process by Kim, Byungwhan, Park, Jang Hyun

    Published in IEEE transactions on plasma science (01-04-2002)
    “…Plasma etching is key to transferring fine patterns. Accurate prediction models are highly demanded to gain improved insights into plasma discharges, as well…”
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  18. 18

    Modeling plasma equipment using neural networks by Kim, Byungwhan, Park, Gwi Tae

    Published in IEEE transactions on plasma science (01-02-2001)
    “…Equipment plasma has been modeled semi-empirically using neural networks in conjunction with statistical experimental design. A 3/sup 3/ factorial design was…”
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  19. 19

    Modeling etch rate and uniformity of oxide via etching in a CHF3/CF4 plasma using neural networks by KIM, Byungwhan, KWON, Kwang-Ho, KWON, Sung-Ku, PARK, Jong-Moon, SEONG WOOK YOO, PARK, Kun-Sik, YOU, In-Kyu, KIM, Bo-Woo

    Published in Thin solid films (24-02-2003)
    “…An oxide film etched in a magnetically-enhanced CHF3/CF4 plasma has been modeled using neural networks. The etch process was characterized with a 24-1…”
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  20. 20

    Proximity-controlled silicon carbide etching in inductively coupled plasma by Kim, Byungwhan, Kim, Sungmo, Ann, Soo-Chnag, Lee, Byung-Teak

    Published in Thin solid films (23-06-2003)
    “…By controlling the proximity relative to plasma source, silicon carbide (SiC) has been etched in a C 2F 6 inductively coupled plasma. This was accomplished by…”
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