Search Results - "Byrnaz, A. É."

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system by Alekseev, A. N., Byrnaz, A. É., Krasovitsky, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’sky, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Shkurko, A. P., Chalyi, V. P.

“…The effect of growth conditions (V/III ratio, substrate temperature) on the properties of materials in AlN-GaN systems is discussed. A concept of the growth of…”
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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates by Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.

“…We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the…”
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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates by Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.

“…Preliminary results on the transfer of the ammonia MBE technology of nitride transistor heterostructures to AlN/SiC substrates. The main device properties…”
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GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer by Alekseev, A. N., Byrnaz, A. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyĭ, V. P., Shkurko, A. P.

“…We have studied the influence of conditions used for the growth of InGaN layers by the molecular beam epitaxy (with ammonia as a source of nitrogen) on the…”
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Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE by Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.

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Multilayer AlN∕AlGaN∕GaN∕AlGaN Heterostructures for High-Power Field-Effect Transistors Grown by Ammonia MBE by Alekseev, A. N.

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