Search Results - "Bychikhin, Sergey"

Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology by Rigato, Matteo, Fleury, Clement, Schwarz, Benedikt, Mergens, Markus, Bychikhin, Sergey, Simburger, Werner, Pogany, Dionyz

“…The operation of stacked MOSFET circuit for RF switch application under electrostatic discharge (ESD) conditions is studied by transmission line pulse (TLP)…”
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HMM–TLP correlation for system-efficient ESD design by Notermans, Guido, Bychikhin, Sergey, Pogany, Dionyz, Johnsson, David, Maksimovic, Dejan

“…A linear correlation between 100ns TLP and the second HMM peak current was found for several common types of protection devices. A detailed thermal analysis…”
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HMMaTLP correlation for system-efficient ESD design by Notermans, Guido, Bychikhin, Sergey, Pogany, Dionyz, Johnsson, David, Maksimovic, Dejan

“…A linear correlation between 100 ns TLP and the second HMM peak current was found for several common types of protection devices. A detailed thermal analysis…”
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Accurate Temperature Measurements of DMOS Power Transistors up to Thermal Runaway by Small Embedded Sensors by Pfost, M., Costachescu, D., Mayerhofer, A., Stecher, M., Bychikhin, S., Pogany, D., Gornik, E.

“…Intrinsic device temperature is one of the most important limits of the safe operating area and of the reliability of power double-diffused…”
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Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications by Fleury, Clément, Zhytnytska, Rimma, Bychikhin, Sergey, Cappriotti, Mattia, Hilt, Oliver, Visalli, Domenica, Meneghesso, Gaudenzio, Zanoni, Enrico, Würfl, Joachim, Derluyn, Joff, Strasser, Gottfried, Pogany, Dionyz

“…•Probability distribution functions of GaN buffer breakdown voltage were determined.•A time dependent behaviour of vertical breakdown was observed.•Vertical…”
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Secondary Discharges during FICDM Stress - Source & Solution by Verwoerd, Sheela, Sluiter, Sander, Bychikhin, Sergey, Meuse, Tom

“…Sometimes during CDM testing, we see that the discharge current polarity is opposite to that of the stress condition. Its occurrence is random and is seen only…”
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Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon by Kuzmik, J., Bychikhin, S., Neuburger, M., Dadgar, A., Krost, A., Kohn, E., Pogany, D.

“…We studied a temperature increase and a heat transfer into a substrate in a pulsed operation of 0.5 length and 150 /spl mu/m gate width AlGaN/GaN HEMTs grown…”
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Small embedded sensors for accurate temperature measurements in DMOS power transistors by Pfost, Martin, Costachescu, Dragos, Podgaynaya, Alja, Stecher, Matthias, Bychikhin, Sergey, Pogany, Dionyz, Gornik, Erich

“…Device temperature is one of the most important limits for the safe operating area and the reliability of power DMOS transistors. Therefore, accurate…”
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Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices by Litzenberger, M., Furbock, C., Bychikhin, S., Pogany, D., Gornik, E.

“…An automated scanning interferometer setup for time resolved measurement of thermal and free carrier distribution in semiconductor devices during short stress…”
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Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry by Pogany, D., Bychikhin, S., Furbock, C., Litzenberger, M., Gornik, E., Groos, G., Esmark, K., Stecher, M.

“…In the backside interferometric thermal mapping technique, an infrared (IR) laser beam probes the temperature-induced changes in the semiconductor refractive…”
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Dynamics of integrated vertical DMOS transistors under 100-ns TLP stress by Moens, P., Bychikhin, S., Reynders, K., Pogany, D., Gornik, E., Tack, M.

“…On-wafer transmission line pulsing (TLP) measurements and transient interferometric mapping experiments on vertically integrated DMOS transistors reveal the…”
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Transient behavior of SCRS during ESD pulses by Esmark, K., Gossner, H., Bychikhin, S., Pogany, D., Russ, C., Langguth, G., Gornik, E.

“…Silicon controlled rectifiers (SCRs) are widely used ESD protection elements exhibiting extremely good voltage clamping and high failure current threshold…”
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A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique by Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmik, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., Stecher, M.

“…Two different protection diodes are investigated with electrothermal simulation and transient interferometric thermal-mapping experiments in a new…”
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Second breakdown behavior in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes by Johnsson, D., Mamanee, W., Bychikhin, S., Pogany, D., Gornik, E., Stecher, M.

“…Bipolar ESD protection devices subjected to low current long pulse stress can sustain a relatively long time during thermal second breakdown without any…”
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25V ESD NPN Transistor Optimized by Distributed Emitter Ballasting using Emitter Contact Area Segmentation by Denison, M., Murtaza, S., Steinhoff, R., Merchant, S., Pendharkar, S., Bychikhin, S., Pogany, D.

“…A 25 V ESD NPN transistor is made high current capable by means of distributed emitter ballasting. The proposed segmentation of the emitter contact area along…”
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Current gain collapse in HBTs analysed by transient interferometric mapping method by Bychikhin, S., Dubec, V., Kuzmik, J., Wurfl, J., Kurpas, P., Teyssier, J.-P., Pogany, D.

“…Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method…”
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Effect of Elevated Ambient Temperature on Thermal Breakdown Behavior in BCD ESD Protection Devices Subjected to Long Electrical Overstress Pulses by Mamanee, W., Bychikhin, S., Johnsson, D., Jensen, N., Stecher, M., Gornik, E., Pogany, D.

“…We investigate the effect of elevated ambient temperature on thermal breakdown (TB) modes in linear-geometry electrostatic discharge (ESD) protection n-p-n…”
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Ruggedness of Integrated VDMOS Transistors Under TLP Stress by Moens, P., Bychikhin, S., Pogany, D.

“…The ruggedness of integrated vertical DMOS transistors under transmission line pulsing stress is experimentally investigated at current levels close to the…”
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HBM ESD Robustness of GaN-on-Si Schottky Diodes by Shih-Hung Chen, Griffoni, A., Srivastava, P., Linten, D., Thijs, S., Scholz, M., Denis, M., Gallerano, A., Lafonteese, D., Concannon, A., Vashchenko, V. A., Hopper, P., Bychikhin, S., Pogany, D., Van Hove, M., Decoutere, S., Groeseneken, G.

“…The ESD robustness of GaN-on-Si Schottky diodes is investigated using on-wafer HBM and TLP. Both forward and reverse diode operation modes are analyzed as a…”
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Thermal distribution during destructive pulses in ESD protection devices using a single-shot two-dimensional interferometric method: Interface reliability by POGANY, Dionyz, BYCHIKHIN, Sergey, KUZMIK, Jan, DUBEC, Viktor, JENSEN, Nils, DENISON, Marie, GROOS, Gerhard, STECHER, Matthias, GORNIK, Erich

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