Search Results - "Buzynin, Yury N."
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1
High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-01-2022)“…The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their…”
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Journal Article -
2
InN Layers Grown by MOCVD on a‐Plane Al2O3
Published in Physica status solidi. A, Applications and materials science (06-06-2018)“…The conditions for obtaining epitaxial InN layers on a‐plane (11–20) sapphire with a GaN buffer layer by MOCVD method are determined for the first time…”
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3
InN Layers Grown by MOCVD on a ‐Plane Al 2 O 3
Published in Physica status solidi. A, Applications and materials science (01-06-2018)Get full text
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4
Growth and defects of GaAs and InGaAs films on porous GaAs substrates
Published in Thin solid films (26-03-2007)“…We investigated the opportunities to increase the electric uniformity of GaAs and InGaAs films grown by molecular-beam epitaxy (MBE) technique on…”
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Journal Article -
5
Growth and defects of GaAs and InGaAs films on porous GaAs substrates
Published in Thin solid films (2007)Get full text
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