Search Results - "Buyuklimanli, Temel H."
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Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy
Published in IEEE transactions on electron devices (01-02-2007)“…We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data…”
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Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization
Published in IEEE transactions on electron devices (01-08-2007)“…In this paper, we showed that the maximum active P concentration of approximately \hbox{2} \times \hbox{10}^{20}\ \hbox{cm}^{-3} exists during solid-phase…”
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High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS
Published in Current applied physics (01-02-2003)“…Depth profiles of ultralow energy (0.2–0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The…”
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Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling
Published in Applied surface science (15-06-2004)“…Accurate depth profile analyses of distributions created by ultra low energy (ULE) ion implantation and annealing in Si has been difficult because the…”
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Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling
Published in Applied surface science (2004)Get full text
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Surface degradation of YBa 2 Cu 3 O 7 − δ superconductors on exposure to air and humidity
Published in Physical review. B, Condensed matter (01-07-1991)Get full text
Journal Article