Search Results - "Buyuklimanli, Temel H."

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    Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy by Suzuki, Kunihiro, Kataoka, Yuji, Nagayama, Susumu, Magee, Charles W., Buyuklimanli, Temel H., Nagayama, Tsutomu

    Published in IEEE transactions on electron devices (01-02-2007)
    “…We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data…”
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    Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization by Suzuki, Kunihiro, Tada, Yoko, Kataoka, Yuji, Kawamura, Kazuo, Nagayama, Tsutomu, Nagayama, Susumu, Magee, Charles W., Buyuklimanli, Temel H., Mueller, Dominik Christoph, Fichtner, Wolfgang, Zechner, Christoph

    Published in IEEE transactions on electron devices (01-08-2007)
    “…In this paper, we showed that the maximum active P concentration of approximately \hbox{2} \times \hbox{10}^{20}\ \hbox{cm}^{-3} exists during solid-phase…”
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    High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS by Kimura, Kenji, Oota, Yukitoshi, Nakajima, Kaoru, Büyüklimanli, Temel H.

    Published in Current applied physics (01-02-2003)
    “…Depth profiles of ultralow energy (0.2–0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The…”
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    Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling by Büyüklimanli, Temel H., Marino, John W., Novak, Steven W.

    Published in Applied surface science (15-06-2004)
    “…Accurate depth profile analyses of distributions created by ultra low energy (ULE) ion implantation and annealing in Si has been difficult because the…”
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