Search Results - "Butun, Bayram"

Large-Area, Cost-Effective, Ultra-Broadband Perfect Absorber Utilizing Manganese in Metal-Insulator-Metal Structure by Aalizadeh, Majid, Khavasi, Amin, Butun, Bayram, Ozbay, Ekmel

“…Achieving broadband absorption has been a topic of intensive research over the last decade. However, the costly and time consuming stage of lithography has…”
Get full text

Strong Light–Matter Interaction in Lithography-Free Planar Metamaterial Perfect Absorbers by Ghobadi, Amir, Hajian, Hodjat, Butun, Bayram, Ozbay, Ekmel

“…The efficient harvesting of electromagnetic (EM) waves by subwavelength nanostructures can result in perfect light absorption in the narrow or broad frequency…”
Get full text

Lithography-Free Planar Band-Pass Reflective Color Filter Using A Series Connection of Cavities by Ghobadi, Amir, Hajian, Hodjat, Soydan, Mahmut Can, Butun, Bayram, Ozbay, Ekmel

“…In this article, a lithography-free multilayer based color filter is realized using a proper series connection of two cavities that shows relatively high…”
Get full text

Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks by Abedini Dereshgi, Sina, Ghobadi, Amir, Hajian, Hodjat, Butun, Bayram, Ozbay, Ekmel

“…We report ultra-broadband perfect absorbers for visible and near-infrared applications that are based on multilayers of metal-insulator (MI) stacks fabricated…”
Get full text

Bismuth-based metamaterials: from narrowband reflective color filter to extremely broadband near perfect absorber by Ghobadi, Amir, Hajian, Hodjat, Gokbayrak, Murat, Butun, Bayram, Ozbay, Ekmel

“…In recent years, sub-wavelength metamaterials-based light perfect absorbers have been the subject of many studies. The most frequently utilized absorber…”
Get full text

Visible light nearly perfect absorber: an optimum unit cell arrangement for near absolute polarization insensitivity by Ghobadi, Amir, Hajian, Hodjat, Gokbayrak, Murat, Dereshgi, Sina Abedini, Toprak, Ahmet, Butun, Bayram, Ozbay, Ekmel

“…In this work, we propose an optimum unit cell arrangement to obtain near absolute polarization insensitivity in a metal-insulator-metal (MIM) based…”
Get full text

Fast Unveiling of T max in GaN HEMT Devices via the Electrical Measurement-Assisted Two-Heat Source Model by Kocer, Hasan, Durna, Yilmaz, Gunes, Burak, Tendurus, Gizem, Butun, Bayram, Ozbay, Ekmel

“…Gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices, which have wide application potential from power amplifiers to satellite, need to be…”
Get full text

Ultra-broadband, wide angle absorber utilizing metal insulator multilayers stack with a multi-thickness metal surface texture by Ghobadi, Amir, Dereshgi, Sina Abedini, Hajian, Hodjat, Bozok, Berkay, Butun, Bayram, Ozbay, Ekmel

“…In this paper, we propose a facile route to fabricate a metal insulator multilayer stack to obtain ultra-broadband, wide angle behavior from the structure. The…”
Get full text

Disordered Nanohole Patterns in Metal-Insulator Multilayer for Ultra-broadband Light Absorption: Atomic Layer Deposition for Lithography Free Highly repeatable Large Scale Multilayer Growth by Ghobadi, Amir, Hajian, Hodjat, Dereshgi, Sina Abedini, Bozok, Berkay, Butun, Bayram, Ozbay, Ekmel

“…In this paper, we demonstrate a facile, lithography free, and large scale compatible fabrication route to synthesize an ultra-broadband wide angle perfect…”
Get full text

Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs by Odabasi, Oguz, Ghobadi, Amir, Ghobadi, Turkan Gamze Ulusoy, Guneysu, Efkan, Urfali, Emirhan, Yaglioglu, Gul, Butun, Bayram, Ozbay, Ekmel

“…In AlGaN/GaN high electron mobility transistors (HEMTs), the existence of long lifetime surface traps can cause several adverse effects, including threshold…”
Get full text

Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices by Odabasi, Oguz, Ghobadi, Amir, Gamze Ulusoy Ghobadi, Turkan, Unal, Yakup, Salkim, Gurur, Basar, Gunes, Butun, Bayram, Ozbay, Ekmel

“…In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal…”
Get full text

Improved T MAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation by Odabasi, Oguz, Akar, Mehmet Omer, Butun, Bayram, Ozbay, Ekmel

“…In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are…”
Get full text

Spectrally Selective Ultrathin Photodetectors Using Strong Interference in Nanocavity Design by Ghobadi, Amir, Demirag, Yigit, Hajian, Hodjat, Toprak, Ahmet, Butun, Bayram, Ozbay, Ekmel

“…Thinning the active layer's thickness of the semiconductor down to a level comparable with the carriers' diffusion length while keeping its absorption high is…”
Get full text

Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion by Odabasi, Oguz, Ghobadi, Amir, Ulusoy Ghobadi, Turkan Gamze, Butun, Bayram, Ozbay, Ekmel

“…In AlGaN/GaN high electron mobility transistors (HEMTs), the long-term operation of the device is adversely affected by threshold voltage (<inline-formula>…”
Get full text

Ultra-broadband Asymmetric Light Transmission and Absorption Through The Use of Metal Free Multilayer Capped Dielectric Microsphere Resonator by Ghobadi, Amir, Dereshgi, Sina Abedini, Butun, Bayram, Ozbay, Ekmel

“…In this paper, we propose a simple design with an excellent performance to obtain high contrast in transmission asymmetry based on dielectric microspheres…”
Get full text

AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity by Odabasi, Oguz, Yilmaz, Dogan, Aras, Erdem, Asan, Kubra Elif, Zafar, Salahuddin, Akoglu, Busra Cankaya, Butun, Bayram, Ozbay, Ekmel

“…In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions…”
Get full text

Silicon nanowire network metal-semiconductor-metal photodetectors by Mulazimoglu, Emre, Coskun, Sahin, Gunoven, Mete, Butun, Bayram, Ozbay, Ekmel, Turan, Rasit, Unalan, Husnu Emrah

“…We report on the fabrication and characterization of solution-processed, highly flexible, silicon nanowire network based metal-semiconductor-metal…”
Get full text

Tunable plasmon-phonon polaritons in anisotropic 2D materials on hexagonal boron nitride by Hajian, Hodjat, Rukhlenko, Ivan D., Hanson, George W., Low, Tony, Butun, Bayram, Ozbay, Ekmel

“…Mid-infrared (MIR) plasmon-phonon features of heterostructures composing of a plasmonic anisotropic two-dimensional material (A2DM) on a hexagonal boron…”
Get full text

High-performance visible-blind GaN-based p - i - n photodetectors by Butun, Bayram, Tut, Turgut, Ulker, Erkin, Yelboga, Tolga, Ozbay, Ekmel

“…We report high performance visible-blind GaN-based p - i - n photodetectors grown by metal-organic chemical vapor deposition on c -plane sapphire substrates…”
Get full text

Tailoring far-infrared surface plasmon polaritons of a single-layer graphene using plasmon-phonon hybridization in graphene-LiF heterostructures by Hajian, Hodjat, Serebryannikov, Andriy E., Ghobadi, Amir, Demirag, Yigit, Butun, Bayram, Vandenbosch, Guy A. E., Ozbay, Ekmel

“…Being one-atom thick and tunable simultaneously, graphene plays the revolutionizing role in many areas. The focus of this paper is to investigate the modal…”
Get full text