Search Results - "Butkute, Renata"

High precision parabolic quantum wells grown using pulsed analog alloy grading technique: Photoluminescence probing and fractional-dimensional space approach by Karaliūnas, Mindaugas, Dudutienė, Evelina, Čerškus, Aurimas, Pagalys, Justas, Pūkienė, Simona, Udal, Andres, Butkutė, Renata, Valušis, Gintaras

“…The designed GaAs/AlGaAs parabolic quantum well (PQW) was grown using a pulsed analog alloy grading (PAAG) technique with molecular beam epitaxy by setting a…”
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HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure by Skapas, Martynas, Stanionytė, Sandra, Paulauskas, Tadas, Butkutė, Renata

“…High‐resolution transmission electron microscopy (HRTEM) study of statistically large number of Bi quantum dots (QD) in annealed GaAsBi/AlAs multiple quantum…”
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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells by Butkutė, Renata, Niaura, Gediminas, Pozingytė, Evelina, Čechavičius, Bronislovas, Selskis, Algirdas, Skapas, Martynas, Karpus, Vytautas, Krotkus, Arūnas

“…Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is…”
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InGaAs Diodes for Terahertz Sensing-Effect of Molecular Beam Epitaxy Growth Conditions by Palenskis, Vilius, Minkevičius, Linas, Matukas, Jonas, Jokubauskis, Domas, Pralgauskaitė, Sandra, Seliuta, Dalius, Čechavičius, Bronislovas, Butkutė, Renata, Valušis, Gintaras

“…InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize…”
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Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes by Glemža, Justinas, Palenskis, Vilius, Geižutis, Andrejus, Čechavičius, Bronislovas, Butkutė, Renata, Pralgauskaitė, Sandra, Matukas, Jonas

“…GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability…”
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Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures by Butkutė, Renata, Stašys, Karolis, Pačebutas, Vaidas, Čechavičius, Bronislovas, Kondrotas, Rokas, Geižutis, Andrejus, Krotkus, Arūnas

“…The strong photoluminescence (PL) signal at wavelengths ranging from 1,300 to 1,500 nm was observed in GaAsBi epitaxial layers grown by migration-enhanced…”
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Photoluminescence investigation of GaAs1−xBix/GaAs heterostructures by Pačebutas, Vaidas, Butkutė, Renata, Čechavičius, Bronius, Kavaliauskas, Julius, Krotkus, Arūnas

“…In this work the impact of doped GaAs buffer and cap layers on the bismide photoluminescence (PL) spectra has been studied. For this study three types of…”
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Photoluminescence at up to 2.4μm wavelengths from GaInAsBi/AlInAs quantum wells by Butkutė, Renata, Pačebutas, Vaidas, Čechavičius, Bronislovas, Nedzinskas, Ramūnas, Selskis, Algirdas, Arlauskas, Andrius, Krotkus, Arūnas

“…5nm, 10nm and 20nm-thick GaInAsBi quantum wells were grown on the InP:Fe(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum…”
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Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors by Minkevičius, Linas, Tamošiūnas, Vincas, Kojelis, Martynas, Žąsinas, Ernestas, Bukauskas, Virginijus, Šetkus, Arūnas, Butkutė, Renata, Kašalynas, Irmantas, Valušis, Gintaras

“…A detailed electrical characterization of high-performance bow-tie InGaAs-based terahertz detectors is presented along with simulation results. The local…”
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Growth and characterization of UTC photo-diodes containing GaAs1−xBix absorber layer by Geižutis, Andrejus, Pačebutas, Vaidas, Butkutė, Renata, Svidovsky, Polina, Strazdienė, Viktorija, Krotkus, Arūnas

“…•Uni-Travelling-Carrier Photo-Diodes with GaAsBi absorber were fabricated.•The impact of cliff between the UTC-PD absorber and collector was investigated.•The…”
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Narrowband Thermal Terahertz Emission from Homoepitaxial GaAs Structures Coupled with Ti/Au Metasurface by Grigelionis, Ignas, Čižas, Vladislovas, Karaliūnas, Mindaugas, Jakštas, Vytautas, Ikamas, Kȩstutis, Urbanowicz, Andrzej, Treideris, Marius, Bičiūnas, Andrius, Jokubauskis, Domas, Butkutė, Renata, Minkevičius, Linas

“…We report on the experimental evidence of thermal terahertz (THz) emission tailored by magnetic polariton (MP) excitations in entirely GaAs-based structures…”
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Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes by Armalytė, Simona, Glemža, Justinas, Jonkus, Vytautas, Pralgauskaitė, Sandra, Matukas, Jonas, Pūkienė, Simona, Zelioli, Andrea, Dudutienė, Evelina, Naujokaitis, Arnas, Bičiūnas, Andrius, Čechavičius, Bronislovas, Butkutė, Renata

“…Fabry-Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the…”
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Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys by Paulauskas, Tadas, Pačebutas, Vaidas, Butkutė, Renata, Čechavičius, Bronislovas, Naujokaitis, Arnas, Kamarauskas, Mindaugas, Skapas, Martynas, Devenson, Jan, Čaplovičová, Mária, Vretenár, Viliam, Li, Xiaoyan, Kociak, Mathieu, Krotkus, Arūnas

“…The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the…”
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GROWTH AND INVESTIGATION OF EPITAXIAL GABIAS LAYERS / EPITAKSINIŲ GABIAS SLUOKSNIŲ AUGINIMAS IR SAVYBIŲ TYRIMAS by Ruseckas, Andrius, Butkute, Renata, Bertulis, Klemensas, Dapkus, Leonas, Pacebutas, Vaidas

“…In this work the influence of technological parameters – Tp substrate temperature and Bi flux – on structural, electrical and optical properties of GaBiAs…”
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Detection of Impurities in Premium Diesel Fuel via Terahertz Frequency Domain Spectroscopy by Salonga Ponseca, Carlito Jr, Karaliunas, Mindaugas, Pocius, Ignas, Gkouzi, Aikaterini-Maria, Butkutė, Renata

“…Long-chain hydrocarbons, petroleum and diesel, have long been used as source of energy for locomotives. Unlike it’s short-chain counterpart petroleum, diesel…”
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Photoluminescence at up to 2.4 [mu]m wavelengths from GaInAsBi/AlInAs quantum wells by Butkute, Renata, Pacebutas, Vaidas, Cechavicius, Bronislovas, Nedzinskas, Ramunas, Selskis, Algirdas, Arlauskas, Andrius, Krotkus, Aranas

“…5 nm, 10 nm and 20 nm-thick GaInAsBi quantum wells were grown on the InP:Fe(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum…”
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Growth and characterization of UTC photo-diodes containing GaAs sub(1-) sub(x)Bi sub(x) absorber layer by Geizutis, Andrejus, Pacebutas, Vaidas, Butkute, Renata, Svidovsky, Polina, Strazdiene, Viktorija, Krotkus, Arunas

“…Uni-Travelling-Carrier Photo-Diodes (UTC-PD) with GaAs sub(1-) sub(x)Bi sub(x) absorber layer have been fabricated and characterized. Two UTC-PD structures…”
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Low-Frequency Noise Characteristics of Quantum Well Structures for NIR Laser Diodes by Armalytė, Simona, Glemža, Justinas, Jonkus, Vytautas, Pralgauskaitė, Sandra, Matukas, Jonas, Pūkienė, Simona, Zelioli, Andrea, Dudutienė, Evelina, Naujokaitis, Arnas, Bičiūnas, Andrius, Čechavičius, Bronislovas, Butkutė, Renata

“…Fabry-Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the…”
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Growth And Investigation Of Epitaxial Gabias Layers by Ruseckas, Andrius, Butkute, Renata, Bertulis, Klemensas, Leonas Dapkus, Pacebutas, Vaidas

“…In this work the influence of technological parameters - Tp substrate temperature and Bi flux - on structural, electrical and optical properties of GaBiAs…”
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Low frequency noise study for developing of AlGaAs and GaAsBi QW structures for NIR LDs by Glemza, Justinas, Pralgauskaite, Sandra, Matukas, Jonas, Pukiene, Simona, Zelioli, Andrea, Biciunas, Andrius, Cechavicius, Bronislovas, Nargeliene, Viktorija, Butkute, Renata

“…Low noise characteristics of Fabry-Perot type laser diodes emitting at (780 - 1100) nm wavelengths were investigated for optimization of geometry and…”
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