Search Results - "Bustarret, Étienne"

The Diamond Superconducting Quantum Interference Device by Mandal, Soumen, Bautze, Tobias, Williams, Oliver A, Naud, Cécile, Bustarret, Étienne, Omnès, Franck, Rodière, Pierre, Meunier, Tristan, Bäuerle, Christopher, Saminadayar, Laurent

“…Diamond is an electrical insulator in its natural form. However, when doped with boron above a critical level (∼0.25 atom %) it can be rendered superconducting…”
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Detailed study of superconductivity in nanostructured nanocrystalline boron doped diamond thin films by Mandal, Soumen, Naud, Cécile, Williams, Oliver A., Bustarret, Étienne, Omnès, Franck, Rodière, Pierre, Meunier, Tristan, Saminadayar, Laurent, Bäuerle, Christopher

“…In this paper, we report on the transport properties of nanostructured boron doped diamond thin films. The nanostructures made from polycrystalline boron doped…”
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Microwave properties of nanodiamond particles by Slocombe, Daniel, Porch, Adrian, Bustarret, Etienne, Williams, Oliver A.

“…The dielectric properties of nanodiamond powders were characterised at microwave frequencies using a cavity perturbation technique, and results were compared…”
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Improved depth resolution of secondary ion mass spectrometry profiles in diamond: A quantitative analysis of the delta-doping by Fiori, Alexandre, Jomard, François, Teraji, Tokuyuki, Chicot, Gauthier, Bustarret, Etienne

“…In this work, we used the depth resolution function (DRF) of the secondary ion mass spectrometry (SIMS) to deconvolve the boron depth profile of nanometer-thin…”
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Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth by Lloret, Fernando, Eon, David, Bustarret, Etienne, Araujo, Daniel

“…The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the…”
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Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth by Lloret, Fernando, Eon, David, Bustarret, Etienne, Fiori, Alexandre, Araujo, Daniel

“…Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect…”
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In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures by Fiori, Alexandre, Tran Thi, Thu Nhi, Chicot, Gauthier, Jomard, François, Omnès, Franck, Gheeraert, Etienne, Bustarret, Etienne

“…One of the main challenges of delta-doping of diamond with boron resides in minimizing the width and optimizing the structural quality of the interface region…”
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Nonadiabatic Kohn Anomaly in Heavily Boron-Doped Diamond by Caruso, Fabio, Hoesch, Moritz, Achatz, Philipp, Serrano, Jorge, Krisch, Michael, Bustarret, Etienne, Giustino, Feliciano

“…We report evidence of a nonadiabatic Kohn anomaly in boron-doped diamond, using a joint theoretical and experimental analysis of the phonon dispersion…”
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Superconducting group-IV semiconductors by Blase, Xavier, Bustarret, Etienne, Chapelier, Claude, Klein, Thierry, Marcenat, Christophe

“…Despite the amount of experimental and theoretical work on doping-induced superconductivity in covalent semiconductors based on group IV elements over the past…”
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Front Cover (Phys. Status Solidi A 9/2010) by Mandal, Soumen, Naud, Cécile, Williams, Oliver A., Bustarret, Étienne, Omnès, Franck, Rodière, Pierre, Meunier, Tristan, Saminadayar, Laurent, Bäuerle, Christopher

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Front Cover (Phys. Status Solidi A 9/2010) by Mandal, Soumen, Naud, Cécile, Williams, Oliver A., Bustarret, Étienne, Omnès, Franck, Rodière, Pierre, Meunier, Tristan, Saminadayar, Laurent, Bäuerle, Christopher

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Front Cover (Phys. Status Solidi A 9/2010) by Mandal, Soumen, Naud, Cécile, Williams, Oliver A., Bustarret, Étienne, Omnès, Franck, Rodière, Pierre, Meunier, Tristan, Saminadayar, Laurent, Bäuerle, Christopher

“…In the Editor's Choice article of this issue (pp. 2017–2022), Mandal et al. report on the transport properties of nanostructured boron‐doped diamond thin…”
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Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration by Lloret, Fernando, Araújo, Daniel, Eon, David, Bustarret, Etienne

“…The overgrowth of {100}-oriented patterned diamond substrates by microwave plasma enhanced chemical vapor deposition was studied by transmission electron…”
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Selectively boron doped homoepitaxial diamond growth for power device applications by Lloret, F., Eon, D., Bustarret, E., Donatini, F., Araujo, D.

“…Diamond lateral growth is a powerful technique for the design and fabrication of diamond-based power electronic devices. Growth orientation affects the diamond…”
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MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density by Lloret, Fernando, Gutierrez, Marina, Araujo, Daniel, Eon, David, Bustarret, Etienne

“…Diamond lateral growth is a useful technique to assess 3D architectures of devices. The requirement of the overgrowth on etched substrates has been observed to…”
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Superconductivity in doped cubic silicon by Débarre, D, Boulmer, J, Ka mar ik, J, Blase, X, Bourgeois, E, Huxley, A, Marcenat, C, Achatz, P, Lévy, F, Ortéga, L, Bustarret, E

“…Although the local resistivity of semiconducting silicon in its standard crystalline form can be changed by many orders of magnitude by doping with elements,…”
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM by Piñero, J.C., Lloret, F., Alegre, M.P., Villar, M.P., Fiori, A., Bustarret, E., Araújo, D.

“…•Boron content of δ-doped diamond layers are calculated by TEM.•Howie-Whelan equation is used to relate the TEM contrast with the boron content.•An iterative…”
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Simulations of carrier confinement in boron δ-doped diamond devices by Fiori, Alexandre, Pernot, Julien, Gheeraert, Etienne, Bustarret, Etienne

“…Diamond delta‐doped field effect transistors are expected to combine high speed and high power commutation. Critical parameters for the design of a diamond 2D…”
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Superconducting diamond: an introduction by Bustarret, E.

“…Even though the early observations of superconductivity in semiconductors were considered in the 1960's to confirm the validity of the BCS model, the recent…”
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Metal-insulator transition and superconductivity in boron-doped diamond by Klein, T., Achatz, P., Kacmarcik, J., Marcenat, C., Gustafsson, F., Marcus, J., Bustarret, E., Pernot, J., Omnes, F., Sernelius, Bo E., Persson, C., Ferreira da Silva, A., Cytermann, C.

“…We report on a detailed analysis of the transport properties and superconducting critical temperatures of boron-doped diamond films grown along the $\{100\}$…”
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