Search Results - "Burlakov, I.D"

To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes by Kholodnov, V. A., Burlakov, I. D.

“…A double heterostructure based on direct-gap semiconductors with a photoabsorption middle layer at the avalanche breakdown voltage is considered. Such…”
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Analytical Description of Avalanche Photodiode Characteristics. An Overview: Part II by Burlakov, I. D., Filachev, A. M., Kholodnov, V. A.

“…This paper deals with the second part of the overview on analytical calculations of the characteristics of avalanche photodiodes (APDs) based predominantly on…”
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Analytical description of avalanche photodiode characteristics. An overview: Part I by Burlakov, I. D., Filachev, A. M., Kholodnov, V. A.

“…The analytical model of avalanche photodiodes based on the different types of p–n structures is discussed. Formulas for avalanche breakdown voltage V BD and…”
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Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements by Boltar, K.O, Burlakov, I.D, Vlasov, P.V, Lopukhin, A.A, Chaliy, V.P, Katsavets, N.I

“…The characteristics of focal plane arrays (FPAs) based on (quantum-well infrared photodetector) QWIP structures with 384 x 288 elements spaced at the intervals…”
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Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication by Burlakov, I. D., Drugova, A. A., Kholodnov, V. A.

“…Principles of an analytical system of physical design of avalanche heterophotodiodes with separate regions of absorption and multiplication (AHPD with SRAM)…”
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MBE-grown InSb photodetector arrays by Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., Lopukhin, A. A.

“…The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays…”
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Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors by Kholodnov, V. A., Burlakov, I. D., Drugova, A. A.

“…Using an analytical model of the avalanche heterophotodiode (AHPhD), principles of selection of its optimal structure are given. The model is based on…”
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Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes by Selyakov, A. Yu, Burlakov, I. D., Filachev, A. M.

“…A comparative analysis of the correlators of steady-state thermal and photoinduced stochastic fields (SFs) of concentrations and currents of mobile charge…”
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Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate by Burlakov, I. D., Boltar, K. O., Vlasov, P. V., Lopukhin, A. A., Toropov, A. I., Zhuravlev, K. S., Fadeev, V. V.

“…Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb…”
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Solid-state photoelectronics of the ultraviolet range (Review) by Boltar, K. O., Burlakov, I. D., Ponomarenko, V. P., Filachev, A. M., Salo, V. V.

“…The state-of-the-art of the development of photodetectors and photoreceiving devices operating in the range of electromagnetic radiation 0.1–0.38 μm is…”
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Analytical model used to calculate focal-plane-array parameters by Patrashin, A. I., Burlakov, I. D., Korneeva, M. D., Shabarov, V. V.

“…The theory making it possible to rather accurately predict a complete set of characteristics (signals, noises, and photoelectric parameters) inherent to all…”
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Structural properties of Cadmium--Zinc--Tellurium substrates for growth of Mercury--Cadmium Tellurium solid solutions by Pryanikov, E.V, Mirofyanchenko, A.E, Burlakov, I.D, Smirnova, N.A, Silina, A.A, Grishechkin, M.B, Denisov, I.A, Shmatov, N.I

“…Experimental results of the investigation and analysis of structural properties of cadmium--zinc--tellurium (CZT) substrates intended for the…”
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Solid state photoelectronics: the current state and new prospects by Burlakov, I. D., Dirochka, A. I., Korneeva, M. D., Ponomarenko, V. P., Filachev, A. M.

“…The analysis of the current state of solid photoelectronics for thermal imaging and thermal direction-finding equipment of new generation is performed. The…”
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An investigation into the effect of high-power pulse IR radiation on the properties of surfaces of [Cd.sub.x][Hg.sub.1-x]Te heteroepitaxial layers by Boltar', K.O, Burlakov, I.D, Voitsekhovskii, A.V, Sizov, A.L, Sredin, V.G, Talipov, N. Kh, Shul'ga, S.A

“…The results of investigations into radiation modification of surfaces of [Cd.sub.x][Hg.sub.1-x]Te (CMT) heteroepitaxial layers grown by molecular-beam and…”
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Investigation of the surface roughness of CdZnTe substrates by different techniques of nanometer accuracy by Burlakov, I. D., Denisov, I. A., Sizov, A. L., Silina, A. A., Smirnova, N. A.

“…The results of measurements of the root-mean-square (rms) surface roughness of CdZnTe substrates by confocal microscopy (CM), atomic force microscopy (AFM),…”
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Measurement of intensity of the second optical harmonic in heteroepitaxial cadmium-mercury telluride structures by Burlakov, I. D., Demin, A. V., Levin, G. G., Piskunov, N. A., Zabotnov, S. V., Kashuba, A. S.

“…Features of the generation of the second optical harmonic in the heterostructures HgCdTe/GaAs and CdTe/HgCdTe/GaAs manufactured by means of molecular-beam…”
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