Search Results - "Burghartz, J. N."

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  1. 1

    A programmable energy efficient readout chip for a multiparameter highly integrated implantable biosensor system by Nawito, M, Richter, H, Stett, A, Burghartz, J N

    Published in Advances in radio science (03-11-2015)
    “…In this work an Application Specific Integrated Circuit (ASIC) for an implantable electrochemical biosensor system (SMART implant, Stett et al., 2014) is…”
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    Journal Article
  2. 2

    Magnetic-Multilayered Interconnects Featuring Skin Effect Suppression by Yan Zhuang, Rejaei, B., Schellevis, H., Vroubel, M., Burghartz, J.N.

    Published in IEEE electron device letters (01-04-2008)
    “…A novel concept for a high-frequency, low-loss interconnect with significant skin effect suppression over a wide frequency band is presented. The concept is…”
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    Journal Article
  3. 3

    Surface-passivated high-resistivity silicon substrates for RFICs by Rong, B., Burghartz, J.N., Nanver, L.K., Rejaei, B., van der Zwan, M.

    Published in IEEE electron device letters (01-04-2004)
    “…Surface passivation of high-resistivity silicon (HRS) by amorphous silicon thin-film deposition is demonstrated as a novel technique for establishing HRS as a…”
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    Journal Article
  4. 4

    Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs by Heuken, L., Kortemeyer, M., Ottaviani, A., Schroder, M., Alomari, M., Fahle, D., Marx, M., Heuken, M., Kalisch, H., Vescan, A., Burghartz, J. N.

    Published in IEEE transactions on electron devices (01-03-2020)
    “…In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si…”
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    Journal Article
  5. 5

    Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components by Ottaviani, A., Palacios, P., Zweipfennig, T., Alomari, M., Beckmann, C., Bierbusse, D., Wieben, J., Ehrler, J., Kalisch, H., Negra, R., Vescan, A., Burghartz, J. N.

    Published in IEEE transactions on electron devices (01-11-2020)
    “…In this work, an evaluation of the performance of discrete elements intended for an <inline-formula> <tex-math notation="LaTeX">{L}…”
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    Journal Article
  6. 6

    Thermal effects in suspended RF spiral inductors by Sagkol, H., Sinaga, S., Burghartz, J.N., Rejaei, B., Akhnoukh, A.

    Published in IEEE electron device letters (01-08-2005)
    “…Self-heating effects on integrated suspended and bulk spiral inductors are explored. A dc current is fed through the inductors during measurement to emulate dc…”
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    Journal Article
  7. 7

    Integrated chip-size antennas for wireless microsystems: Fabrication and design considerations by Mendes, P.M., Polyakov, A., Bartek, M., Burghartz, J.N., Correia, J.H.

    Published in Sensors and actuators. A. Physical. (01-01-2006)
    “…This paper reports on fabrication and design considerations of an integrated folded shorted-patch chip-size antenna for applications in short-range wireless…”
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    Journal Article
  8. 8

    Ultra-thin Image Sensor Chip Embeded Foil by Wang, S., Albrecht, B., Harendt, C., Schulze Spuntrup, J. D., Burghartz, J. N.

    “…Hybrid Systems in Foil (HySiF) is an integration concept for high-performance and large-area flexible electronics. The technology allows for integrating…”
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    Conference Proceeding
  9. 9

    Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications by Garcia-Luque, A., Martin-Guerrero, T. M., Pradhan, M., Moser, M., Alomari, M., Burghartz, J. N., Schoch, B., Sharma, K., Kallfass, I.

    “…An accurate HEMT equivalent model extraction strategy is described and tested for the RF performance of AlGaN/GaN high-power devices. This method provides the…”
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    Conference Proceeding
  10. 10

    On the design of RF spiral inductors on silicon by Burghartz, J.N., Rejaei, B.

    Published in IEEE transactions on electron devices (01-03-2003)
    “…This review of design principles for implementation of a spiral inductor in a silicon integrated circuit fabrication process summarizes prior art in this…”
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    Journal Article
  11. 11

    Large area Silicon-energy filters for ion implantation by Steinbach, T., Csato, C., Krippendorf, F., Letzkus, F., Rüb, M., Burghartz, J.N.

    Published in Microelectronic engineering (01-02-2020)
    “…In this work we present the first time to our knowledge a large area Si-energy filter for ion implantation based on a 150 mm SOI Wafer Flow Process. The filter…”
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    Journal Article
  12. 12

    Review of add-on process modules for high-frequency silicon technology by Burghartz, J.N.

    Published in Microelectronics and reliability (01-03-2005)
    “…Add-on process modules as enhancements for standard high-frequency silicon integration processes are discussed. Such modules can cost-effectively be added…”
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    Journal Article
  13. 13

    A new approach to determine development model parameters by employing the isotropy of the development process by Kaspar, C., Butschke, J., Irmscher, M., Martens, S., Burghartz, J.N.

    Published in Microelectronic engineering (25-05-2017)
    “…There is an increasing demand for high-resolution three-dimensional (3D) structures as for instance micro-optical lenses or blazed gratings. The fabrication of…”
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    Journal Article
  14. 14

    GHz bandstop microstrip filter using patterned Ni78Fe22 ferromagnetic film by Zhuang, Y, Rejaei, B, Boellaard, E, Vroubel, M, Burghartz, J N

    “…A series of microstrips with patterned Ni78Fe22 ferromagnetic cores have been investigated for RF applications. The devices have been integrated onto a silicon…”
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    Journal Article
  15. 15

    Integrated RF inductors with micro-patterned NiFe core by Zhuang, Y., Vroubel, M., Rejaei, B., Burghartz, J.N.

    Published in Solid-state electronics (01-03-2007)
    “…Integrated radio-frequency solenoids with micro-patterned magnetic cores for reduced dimensions and compatibility with CMOS/BiCMOS process technology are…”
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    Journal Article
  16. 16

    Monocrystalline thin-film waferlevel encapsulation of microsystems using porous silicon by Prümm, A., Kraft, K.-H., Gottschling, P., Ahles, M., Armbruster, S., Metz, M., Burghartz, J.N.

    Published in Sensors and actuators. A. Physical. (01-12-2012)
    “…A new technology for thin-film MEMS encapsulation based on a monocrystalline silicon membrane and interfacial bonding is presented. The thickness of the…”
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    Journal Article
  17. 17

    Substrate effects in monolithic RF transformers on silicon by Ng, K.T., Rejaei, B., Burghartz, J.N.

    “…The effect of substrate RF losses on the characteristics of silicon-based integrated transformers is studied experimentally by using a substrate transfer…”
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    Journal Article
  18. 18

    Integrated tunable magnetic RF inductor by Vroubel, M., Yan Zhuang, Rejaei, B., Burghartz, J.N.

    Published in IEEE electron device letters (01-12-2004)
    “…We demonstrate, for the first time to our knowledge, a passive, electrically tunable integrated radio frequency (RF) inductor based on a planar solenoid with a…”
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    Journal Article
  19. 19

    Photoresist coating methods for the integration of novel 3-D RF microstructures by Nga Phuong Pham, Boellaard, E., Burghartz, J.N., Sarro, P.M.

    Published in Journal of microelectromechanical systems (01-06-2004)
    “…This paper presents three coating methods of photoresist on large three-dimensional (3-D) topography surfaces. Two special methods, spray and electrodeposition…”
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    Journal Article
  20. 20

    Substrate options and add-on process modules for monolithic RF silicon technology by Burghartz, J.N., Bartek, M., Rejaei, B., Sarro, P.M., Polyakov, A., Pham, N.P., Boullaard, E., Ng, K.T.

    “…Add-on process modules as enhancements of standard high-frequency silicon integration processes are discussed. Such modules can be added without any…”
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    Conference Proceeding