Search Results - "Burenkov, Alexander"
-
1
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
Published in IEEE transactions on electron devices (01-08-2015)“…The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using…”
Get full text
Journal Article -
2
Nanostructured organosilicon luminophores and their application in highly efficient plastic scintillators
Published in Scientific reports (08-10-2014)“…Organic luminophores are widely used in various optoelectronic devices, which serve for photonics, nuclear and particle physics, quantum electronics, medical…”
Get full text
Journal Article -
3
Long-Term Optical Monitoring of Broad-Line AGNs (LoTerm AGN): Case Study of NGC 3516
Published in Physics (Online) (01-03-2024)“…Properties of the broad line region (BLR) in active galactic nuclei (AGNs) are commonly used to estimate the mass of the supermassive black hole (SMBH) that…”
Get full text
Journal Article -
4
Long-Term Monitoring of the Broad-Line Region Properties in a Selected Sample of AGN
Published in Frontiers in astronomy and space sciences (14-09-2017)“…We present the results of the long-term optical monitoring campaign of active galactic nuclei (AGN) coordinated by the Special Astrophysical Observatory of the…”
Get full text
Journal Article -
5
Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation
Published in Solid-state electronics (01-02-2023)“…•3D TCAD simulation of vertical junctionless gate-all-around nanowire transistors.•Boron depletion during oxidation deeply affects doping in nanowires.•Small…”
Get full text
Journal Article -
6
Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires
Published in Measurement : journal of the International Measurement Confederation (01-04-2023)“…The development of non-planar structures such as arrays of nanowires (NWs), poses a significant challenge for dopant concentration determination. Techniques…”
Get full text
Journal Article -
7
Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23-09-2020)“…Thermal transport in radial direction in Si nanowires embedded into amorphous silicon dioxide has been studied using nonequilibrium molecular dynamics…”
Get full text
Conference Proceeding -
8
Advanced simulations on laser annealing: explosive crystallization and phonon transport corrections
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23-09-2020)“…Current semiconductor device manufacturing often needs the integration of annealing process steps with a low thermal budget; and, among them, pulsed laser…”
Get full text
Conference Proceeding -
9
Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations
Published in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2016)“…This paper presents a TCAD based design technology co-optimization (DTCO) process for 14nm SOI FinFET based SRAM, which employs an enhanced variability-aware…”
Get full text
Conference Proceeding -
10
Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
Published in Solid-state electronics (01-11-2011)“…In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on the leakage current and defect…”
Get full text
Journal Article Conference Proceeding -
11
Variability-aware compact model strategy for 20-nm bulk MOSFETs
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2014)“…In this paper a variability-aware compact modeling strategy is presented for 20-nm bulk planar technology, taking into account the critical dimension…”
Get full text
Conference Proceeding -
12
An Application-Driven Improvement of the Drift-Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices
Published in IEEE transactions on electron devices (01-11-2008)“…This paper presents a quantum-mechanical modification of the conventional drift-diffusion model for simulation of quasi-ballistic carrier transport under…”
Get full text
Journal Article -
13
Molecular dynamics simulations supporting the development of a continuum model of heat transport in nanowires
Published in 2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) (23-09-2021)“…We establish a suitable methodology for Molecular Dynamics (MD) simulations to provide reliable data for the development of continuum model extensions of…”
Get full text
Conference Proceeding -
14
Long-term optical spectral monitoring of a changing-look active galactic nucleus NGC 3516 -- II. Broad-line profile variability
Published 01-06-2023“…A&A 675, A178 (2023) We analyze the broad H$\beta$ line profile variability of the "changing look" active galactic nucleus (CL-AGN) NGC 3516 over a long period…”
Get full text
Journal Article -
15
On the stability of fully depleted SOI MOSFETs under lithography process variations
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01-09-2008)“…In this paper, a TCAD-based simulation study on lithography process-induced gate length variations has been performed. This study aims at evaluating fully…”
Get full text
Conference Proceeding -
16
Long-term monitoring of the broad-line region properties in a selected sample of AGN
Published 30-03-2018“…2017, Frontiers in Astronomy and Space Sciences, 4, 12 We present the results of the long-term optical monitoring campaign of active galactic nuclei (AGN)…”
Get full text
Journal Article -
17
Simulation for statistical variability in realistic 20nm MOSFET
Published in 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) (01-04-2014)“…In order to enable the simulation of statistical variability simulation in non-ideal device structures which arise from complex patterning steps, the GSS…”
Get full text
Conference Proceeding -
18
Monte Carlo simulation of silicon amorphization during ion implantation
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01-12-1998)“…We present a new analytical model to predict the spatial location of amorphous phases in ion-implanted single-crystalline silicon using results of…”
Get full text
Journal Article -
19
Detection of reactor antineutrino coherent scattering off nuclei with a two-phase noble gas detector
Published 27-03-2009“…JINST 4:P06010,2009 Estimation of the signal amplitudes and counting rates for coherent scattering of reactor antineutrino off atomic nuclei in two-phase xenon…”
Get full text
Journal Article -
20
"The Museum of Pictorial Culture": NEW TRETYAKOV GALLERY
Published in Artforum international (01-03-2020)“…In Moscow in 1918, the people's commissar of education, Anatoly Lunacharsky, approved a list of 143 artists who sought to elevate the aesthetic sensibility of…”
Get full text
Magazine Article