Search Results - "Buragohain, P."

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors by Buragohain, P., Richter, C., Schenk, T., Lu, H., Mikolajick, T., Schroeder, U., Gruverman, A.

“…Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse…”
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Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions by Chaudhary, P., Buragohain, P., Kozodaev, M., Zarubin, S., Mikheev, V., Chouprik, A., Lipatov, A., Sinitskii, A., Zenkevich, A., Gruverman, A.

“…Pairing two-dimensional semiconductors with ferroelectric films may allow for the development of hybrid electronic devices that would not only exhibit a…”
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Maximization of extraction of Cadmium and Zinc during recycling of spent battery mix: An application of combined genetic programming and simulated annealing approach by Yun, Liu, Li, Wei, Garg, Akhil, Maddila, Sivasriprasanna, Gao, Liang, Fan, Zhun, Buragohain, P., Wang, Chin-Tsan

“…There are a number of government directives and regulations as well as many public schemes on the recycling of batteries, in spite of this; the quantity of…”
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High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling by Penumatcha, A., O'Brien, K. P., Maxey, K., Mortelmans, W., Steinhardt, R., Dutta, S., Dorow, C. J., Naylor A., C. H., Kitamura, Kitamura, Zhong, T., Tronic, T., Buragohain, P., Rogan, C., Lin, C-C., Kavrik, M., Lux, J., Oni, A., Vyatskikh, A., Lee, S., Arefin, N., Fischer, P., Clenndenning, S., Radosavljevic, M., Metz, M., Avci, U.

“…Transition metal dichalcogenide [TMD] 2D channel materials offer a unique opportunity for scaled transistor gate lengths below 10 nm to enable ultra-scaled…”
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Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length by Mortelmans, W., Buragohain, P., Rogan, C., Kitamura, A., Dorow, C.J., O'Brien, K.P., Ramamurthy, R., Lux, J., Zhong, T., Harlson, S., Gillispie, E., Wilson, T., Oni, A., Penumatcha, A., Kavrik, M., Maxey, K., Kozhakhmetov, A., Lin, C-C., Lee, S., Vyatskikh, A., Arefin, N., Fischer, P., Kevek, J., Tronic, T., Metz, M., Clendenning, S., Avci, U.

“…2D transition metal dichalcogenides are promising candidates as channel material choice in ultimately scaled CMOS. We report record performance in GAA 2D NMOS…”
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Novel Resin-Based Ultrapurification System for Reprocessing IPA in the Semiconductor Industry by Buragohain, Partha V, Gill, William N, Cramer, Steven M

“…There is an urgent need for the development of energy-efficient recycling and ultrapurification processes for 2-propanol solvent wastes generated from the…”
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