Search Results - "Buono, B"

High-Dose Chemotherapy With Stem Cell Transplant to Delay Craniospinal Irradiation in Pediatric Embryonal Brain Tumor Patients by Raleigh, D, Tomlin, B, Del Buono, B, Roddy, E, Sear, K, Byer, L, Felton, E, Banerjee, A, Torkildson, J, Samuel, D, Horn, B, Braunstein, S.E, Haas-Kogan, D.A, Mueller, S

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High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension by Ghandi, R., Buono, B., Domeij, M., Malm, G., Zetterling, C.-M., Ostling, M.

“…Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured,…”
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Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation by Ghandi, R, Buono, B, Zetterling, C.-M, Domeij, M, Shayestehaminzadeh, S, Östling, M

“…In this letter, the dependence of current gain and base resistance on crystal orientations for single-finger 4H-SiC bipolar junction transistors (BJTs) is…”
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P103 Longitudinal analysis of intestinal biopsies from children with potential Coeliac disease: immunohistochemical markers predicting evolution to villous atrophy by Mandile, R., Maglio, M.A., Discepolo, V., Buono, B., Imperato, F., Greco, L., Troncone, R., Auricchio, R.

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Merocyanine 540 as a flow cytometric probe of membrane lipid organization in leukocytes by McEvoy, L, Schlegel, R A, Williamson, P, Del Buono, B J

“…Merocyanine 540 (MC540) is a fluorescent probe that binds preferentially to membranes with loosely packed lipids. When combined with flow cytometry, it…”
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High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain by Ghandi, R., Buono, B., Domeij, M., Zetterling, C., Ostling, M.

“…In this paper, implantation-free 4H-SiC bipolar junction transistors (BJTs) with a high breakdown voltage of 2800 V have been fabricated by utilizing a…”
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Surface-Passivation Effects on the Performance of 4H-SiC BJTs by Ghandi, R, Buono, B, Domeij, M, Esteve, R, Schöner, A, Jisheng Han, Dimitrijev, S, Reshanov, S A, Zetterling, C-M, Östling, M

“…In this brief, the electrical performance in terms of maximum current gain and breakdown voltage is compared experimentally and by device simulation for 4H-SiC…”
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Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs by Buono, B., Ghandi, R., Domeij, M., Malm, B.G., Zetterling, C.-M., Ostling, M.

“…Accurate physical modeling has been developed to describe the current gain of silicon carbide (SiC) power bipolar junction transistors (BJTs), and the results…”
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Impact of Ionizing Radiation on the \hbox/ \hbox Interface in 4H-SiC BJTs by Usman, Muhammad, Buono, B., Hallen, A.

“…Degradation of SiO 2 surface passivation for 4H-SiC power bipolar junction transistors (BJTs) as a result of ion irradiation has been studied to assess the…”
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Modeling and Characterization of the on-Resistance in 4H-SiC Power BJTs by Buono, B, Ghandi, R, Domeij, M, Malm, B G, Zetterling, Carl-Mikael, Ostling, M

“…The on-resistance of silicon carbide bipolar transistors is characterized and simulated. Output characteristics are compared at different base currents and…”
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Relation between the Organization of Spectrin and of Membrane Lipids in Lymphocytes by Del Buono, Brian J., Williamson, Patrick L., Schlegel, Robert A.

“…In lymphocytes, the cytoskeletal protein spectrin exhibits two organizational states. Because the plasma membrane lipids of lymphocytes also display two…”
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High Current-Gain Implantation-Free 4H-SiC Monolithic Darlington Transistor by Ghandi, R, Buono, B, Domeij, M, Östling, M

“…An implantation-free 4H-SiC Darlington transistor with high current gain of 2900 (J C = 970 A/cm 2 and V CE = 6 V) at room temperature is reported. The device…”
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Preparation and characterization of plasma membrane vesicles from human polymorphonuclear leukocytes by Del Buono, B J, Luscinskas, F W, Simons, E R

“…It would be advantageous to prepare models of the neutrophil plasma membrane in order to examine the role of the plasma membrane in transmembrane signal…”
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Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes by Salemi, Arash, Elahipanah, Hossein, Buono, Benedetto, Hallen, Anders, Hassan, Jawad Ul, Bergman, Peder, Malm, Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

“…Degradation-free ultrahigh-voltage (>10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (V F = 3.3 V at 100 A/cm 2 ) and low differential…”
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Fabrication of 2700-V 12- \hbox\Omega \cdot \hbox^ Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50 by Ghandi, R., Hyung-Seok Lee, Domeij, M., Buono, B., Zetterling, C.-M., Ostling, M.

“…High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm 2 ) and high common-emitter…”
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Fabrication of 2700-V 12-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H-SiCBJTs With Common-Emitter Current Gain of 50 by Ghandi, R., Hyung-Seok Lee, Domeij, M., Buono, B., Zetterling, C.-M., Ostling, M.

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Plasma membrane lipid organization and the adherence of differentiating lymphocytes to macrophages by Del Buono, B J, White, S M, Williamson, P L, Schlegel, R A

“…Changes in the packing of phospholipids in the plasma membrane of lymphocytes occur during differentiation within primary and secondary lymphoid organs. As…”
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Fabrication of 2700-V 12-[Formula Omitted] Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50 by Ghandi, R, Lee, Hyung-Seok, Domeij, M, Buono, B, Zetterling, C-M, Ostling, M

“…High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm super(2)) and high…”
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Infraorbital infection related to odontodysplasia: case report by Ferguson, F S, Creath, C J, Buono, B

“…A case of a 3-year-old, white female with odontodysplasia is presented. Histological considerations and the rapid development of an infraorbital infection in…”
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SiC bipolar devices for high power and integrated drivers by Ostling, M., Ghandi, R., Buono, B., Lanni, L., Malm, B. G., Zetterling, C.-M

“…Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. The first SiC device to reach the…”
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