Search Results - "Buonassisi, T."

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy by Siah, S. C., Brandt, R. E., Lim, K., Schelhas, L. T., Jaramillo, R., Heinemann, M. D., Chua, D., Wright, J., Perkins, J. D., Segre, C. U., Gordon, R. G., Toney, M. F., Buonassisi, T.

“…Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga2O3:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single…”
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The effect of sub-oxide phases on the transparency of tin-doped gallium oxide by Lim, K., Schelhas, L. T., Siah, S. C., Brandt, R. E., Zakutayev, A., Lany, S., Gorman, B., Sun, C. J., Ginley, D., Buonassisi, T., Toney, M. F.

“…There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a…”
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Low intensity conduction states in FeS2: implications for absorption, open-circuit voltage and surface recombination by Lazić, P, Armiento, R, Herbert, F W, Chakraborty, R, Sun, R, Chan, M K Y, Hartman, K, Buonassisi, T, Yildiz, B, Ceder, G

“…Pyrite (FeS2), being a promising material for future solar technologies, has so far exhibited in experiments an open-circuit voltage (OCV) of around 0.2 V,…”
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Oxygen migration enthalpy likely limits oxide precipitate dissolution during tabula rasa by Looney, E. E., Laine, H. S., Youssef, A., Jensen, M. A., LaSalvia, V., Stradins, P., Buonassisi, T.

“…In industrial silicon solar cells, oxygen-related defects lower device efficiencies by up to 20% (rel.). In order to mitigate these defects, a high-temperature…”
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Effective lifetimes exceeding 300 μ s in gettered p -type epitaxial kerfless silicon for photovoltaics by Powell, D. M., Hofstetter, J., Fenning, D. P., Hao, R., Ravi, T. S., Buonassisi, T.

“…We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In…”
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Control of metal impurities in “dirty” multicrystalline silicon for solar cells by Istratov, A.A., Buonassisi, T., Pickett, M.D., Heuer, M., Weber, E.R.

“…The rapid growth of the global photovoltaics (PV) industry is increasingly limited by the availability of suitable Si feedstock material. Therefore, it is very…”
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Non-monotonic effect of growth temperature on carrier collection in SnS solar cells by Chakraborty, R., Steinmann, V., Mangan, N. M., Brandt, R. E., Poindexter, J. R., Jaramillo, R., Mailoa, J. P., Hartman, K., Polizzotti, A., Yang, C., Gordon, R. G., Buonassisi, T.

“…We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall…”
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Chemical natures and distributions of metal impurities in multicrystalline silicon materials by Buonassisi, T., Istratov, A. A., Pickett, M. D., Heuer, M., Kalejs, J. P., Hahn, G., Marcus, M. A., Lai, B., Cai, Z., Heald, S. M., Ciszek, T. F., Clark, R. F., Cunningham, D. W., Gabor, A. M., Jonczyk, R., Narayanan, S., Sauar, E., Weber, E. R.

“…We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors,…”
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Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling by Fenning, D. P., Hofstetter, J., Bertoni, M. I., Hudelson, S., Rinio, M., Lelièvre, J. F., Lai, B., del Cañizo, C., Buonassisi, T.

“…The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence…”
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Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration by Buonassisi, T., Istratov, A. A., Pickett, M. D., Marcus, M. A., Ciszek, T. F., Weber, E. R.

“…Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal…”
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Impurity-to-efficiency simulator: predictive simulation of silicon solar cell performance based on iron content and distribution by Hofstetter, J., Fenning, D. P., Bertoni, M. I., Lelièvre, J. F., Cañizo1, C. del, Buonassisi, T.

“…We present a simulation tool that predicts solar cell efficiency based on iron content in as‐grown wafer and solar cell processing conditions. This…”
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Transition metal co-precipitation mechanisms in silicon by Buonassisi, T., Heuer, M., Istratov, A.A., Pickett, M.D., Marcus, M.A., Lai, B., Cai, Z., Heald, S.M., Weber, E.R.

“…Formation mechanisms of precipitates containing multiple-metal species in silicon are elucidated by nano-scale morphology and phase investigations performed by…”
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Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells by Buonassisi, T., Istratov, A. A., Peters, S., Ballif, C., Isenberg, J., Riepe, S., Warta, W., Schindler, R., Willeke, G., Cai, Z., Lai, B., Weber, E. R.

“…Synchrotron-based analytical x-ray microprobe techniques were employed to study the dissolution of iron, copper, and nickel silicide precipitates at structural…”
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In-situ photoluminescence imaging for passivation-layer etching process control for photovoltaics by Lee, J. Z., Michaelson, L., Munoz, K., Tyson, T., Gallegos, A., Sullivan, J. T., Buonassisi, T.

“…Light-induced plating (LIP) of solar-cell metal contacts is a scalable alternative to silver paste. However, LIP requires an additional patterning step to…”
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Local melting in silicon driven by retrograde solubility by Fenning, D.P., Newman, B.K., Bertoni, M.I., Hudelson, S., Bernardis, S., Marcus, M.A., Fakra, S.C., Buonassisi, T.

“…High point-defect enthalpy of formation leads to retrograde solubility for a number of solutes in silicon, especially d-shell transition metals. We present…”
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Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells by Bertoni, M.I., Hudelson, S., Newman, B.K., Fenning, D.P., Dekkers, H.F.W., Cornagliotti, E., Zuschlag, A., Micard, G., Hahn, G., Coletti, G., Lai, B., Buonassisi, T.

“…We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We…”
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Dislocation Density Reduction During Impurity Gettering in Multicrystalline Silicon by Choi, H. J., Bertoni, M. I., Hofstetter, J., Fenning, D. P., Powell, D. M., Castellanos, S., Buonassisi, T.

“…Isothermal annealing above 1250 °C has been reported to reduce the dislocation density in multicrystalline silicon (mc-Si), presumably by pairwise dislocation…”
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Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material by Buonassisi, T., Istratov, A.A., Pickett, M.D., Rakotoniaina, J.-P., Breitenstein, O., Marcus, M.A., Heald, S.M., Weber, E.R.

“…We assess the contamination potential of crucibles used during directionally solidified multicrystalline silicon (mc-Si) ingot casting for cost-effective solar…”
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Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current by Buonassisi, T., Istratov, A. A., Pickett, M. D., Marcus, M. A., Hahn, G., Riepe, S., Isenberg, J., Warta, W., Willeke, G., Ciszek, T. F., Weber, E. R.

“…Synchrotron-based, spectrally resolved x-ray beam-induced current (SR-XBIC) is introduced as a technique to locally measure the minority carrier diffusion…”
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Stress-enhanced dislocation density reduction in multicrystalline silicon by Bertoni, M. I., Powell, D. M., Vogl, M. L., Castellanos, S., Fecych, A., Buonassisi, T.

“…Stress is generally perceived to be detrimental for multicrystalline silicon (mc‐Si), leading to dislocation multiplication during crystal growth and…”
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