Search Results - "Buller, G S"

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  1. 1

    Imaging high-dimensional spatial entanglement with a camera by Edgar, M.P., Tasca, D.S., Izdebski, F., Warburton, R.E., Leach, J., Agnew, M., Buller, G.S., Boyd, R.W., Padgett, M.J.

    Published in Nature communications (07-08-2012)
    “…The light produced by parametric down-conversion shows strong spatial entanglement that leads to violations of EPR criteria for separability. Historically,…”
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    Journal Article
  2. 2

    Secure polarization-independent subcarrier quantum key distribution in optical fiber channel using BB84 protocol with a strong reference by Gleim, A V, Egorov, V I, Nazarov, Yu V, Smirnov, S V, Chistyakov, V V, Bannik, O I, Anisimov, A A, Kynev, S M, Ivanova, A E, Collins, R J, Kozlov, S A, Buller, G S

    Published in Optics express (08-02-2016)
    “…A quantum key distribution system based on the subcarrier wave modulation method has been demonstrated which employs the BB84 protocol with a strong reference…”
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    Journal Article
  3. 3

    Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates by Karachinsky, L. Ya, Pellegrini, S., Buller, G. S., Shkolnik, A. S., Gordeev, N. Yu, Evtikhiev, V. P., Novikov, V. B.

    Published in Applied physics letters (05-01-2004)
    “…Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by…”
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    Journal Article
  4. 4

    Spatial dependence of output pulse delay in a niobium nitride nanowire superconducting single-photon detector by O'Connor, J. A., Tanner, M. G., Natarajan, C. M., Buller, G. S., Warburton, R. J., Miki, S., Wang, Z., Nam, S. W., Hadfield, R. H.

    Published in Applied physics letters (16-05-2011)
    “…We report on the position-dependent variation in output pulse timing across a superconducting single-photon detector. Our device consists of a single niobium…”
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    Journal Article
  5. 5

    Single photon sources based upon single quantum dots in semiconductor microcavity pillars by Timpson, J. A., Sanvitto, D., Daraei, A., Guimaraes, P. S. S., Vinck, H., Lam, S., Whittaker, D. M., Skolnick, M. S., Fox, A. M., Hu, C. Y., Ho, Y.-L. D., Gibson, R., Rarity, J. G., Pellegrini, S., Gordon, K. J., Warburton, R. E., Tahraoui, A., Buller, G. S., Fry, P. W., Hopkinson, M.

    Published in Journal of modern optics (20-01-2007)
    “…Semiconductor microcavity pillars with both circular and elliptical cross-section containing semiconductor quantum dots are shown to be good candidates for…”
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    Journal Article Conference Proceeding
  6. 6

    Passive Optical Network Approach to Gigahertz-Clocked Multiuser Quantum Key Distribution by Fernandez, V., Collins, R.J., Gordon, K.J., Townsend, P.D., Buller, G.S.

    Published in IEEE journal of quantum electronics (01-02-2007)
    “…We present the application of quantum key distribution (QKD) technologies to fiber-based broad-band passive optical access networks. This application is based…”
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    Journal Article
  7. 7

    A short wavelength GigaHertz clocked fiber-optic quantum key distribution system by Gordon, K.J., Fernandez, V., Townsend, P.D., Buller, G.S.

    Published in IEEE journal of quantum electronics (01-07-2004)
    “…A quantum key distribution (QKD) system has been developed, using a standard telecommunications optical fiber, which is capable of operating at clock rates of…”
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    Journal Article
  8. 8

    Design and performance of an InGaAs-InP single-photon avalanche diode detector by Pellegrini, S., Warburton, R.E., Tan, L.J.J., Jo Shien Ng, Krysa, A.B., Groom, K., David, J.P.R., Cova, S., Robertson, M.J., Buller, G.S.

    Published in IEEE journal of quantum electronics (01-04-2006)
    “…This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon…”
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    Journal Article
  9. 9
  10. 10

    Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots by Gontijo, I., Buller, G. S., Massa, J. S., Walker, A. C., Zaitsev, S. V., Gordeev, N. Yu, Ustinov, V. M., Kop'ev, P. S.

    Published in Japanese Journal of Applied Physics (01-02-1999)
    “…The relaxation mechanisms of an array of 10 vertically coupled layers of InGaAs/AlGaAs quantum dots were studied by time-resolved photoluminescence. Both…”
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    Journal Article
  11. 11

    Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures by Fancey, S.J., Buller, G.S., Massa, J.S., Walker, A.C., Perrin, S.D., Dann, A.J., Robertson, M.J.

    Published in Journal of crystal growth (1998)
    “…A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier…”
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    Journal Article
  12. 12

    Quantum correlations in position, momentum, and intermediate bases for a full optical field of view by Leach, J., Warburton, R. E., Ireland, D. G., Izdebski, F., Barnett, S. M., Yao, A. M., Buller, G. S., Padgett, M. J.

    “…We report an eight-element, linear-array, single-photon detector that uses multiple fibers of differing lengths coupled to a single detector, the timing…”
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    Journal Article
  13. 13

    Evidence of carrier confinement in nonlinear GaAs/AlGaAs multiple quantum-well microresonators fabricated using alloy mixing techniques by MASSA, J. S, BULLER, G. S, WALKER, A. C, OUDAR, J. L, RAO, E. V. K, SFEZ, B. G, KUSELEWICZ, R

    Published in Applied physics letters (02-11-1992)
    “…Time-resolved photoluminescence measurements with <5 μm spatial resolution have provided direct evidence of carrier confinement in micrometer-dimensioned…”
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    Journal Article
  14. 14

    Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates by Shkolnik, A. S., Karachinsky, L. Ya, Gordeev, N. Yu, Zegrya, G. G., Evtikhiev, V. P., Pellegrini, S., Buller, G. S.

    Published in Applied physics letters (23-05-2005)
    “…Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with…”
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    Journal Article
  15. 15

    Growth and characterization of ZnSe based blue green VCSELs by Prior, K A, Meredith, W, Brownlie, G D, Milnes, J, Buller, G S, Cavenett, B C, Dann, A J, Robertson, M J

    “…Blue green vertical cavity surface emitting lasers (VCSELs) have been produced in which the active region comprised molecular beam epitaxy (MBE) grown ZnSe…”
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    Journal Article
  16. 16

    All-optical routing networks based on bistable interferometers by BULLER, G. S, PATON, C. R, SMITH, S. D, WALKER, A. C

    Published in Applied physics letters (19-12-1988)
    “…The possibility of using bistable nonlinear Fabry–Perot interferometers as wide-band data transparent all-optical spatial switches has been investigated. It…”
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    Journal Article
  17. 17

    A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy by Massa, J.S., Buller, G.S., Walker, A.C., Simpson, J., Horsburgh, G., Mullins, J.T., Prior, K.A., Cavenett, B.C.

    Published in Journal of crystal growth (01-02-1996)
    “…In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn0.25Cd0.75SeZnSe single quantum well…”
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    Journal Article Conference Proceeding
  18. 18

    Hot pixel classification of single‐photon avalanche diode detector arrays using a log‐normal statistical distribution by P.W.R. Connolly, X. Ren, R.K. Henderson, G.S. Buller

    Published in Electronics letters (05-09-2019)
    “…CMOS single‐photon avalanche diode (SPAD) detector arrays are commonly used in low‐light imaging applications, and are known to suffer from certain defects…”
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    Journal Article
  19. 19

    Carrier storage and capture dynamics in quantum-dot heterostructures by Smith, J. M., Dalgarno, P. A., Urbaszek, B., McGhee, E. J., Buller, G. S., Nott, G. J., Warburton, R. J., Garcia, J. M., Schoenfeld, W., Petroff, P. M.

    Published in Applied physics letters (26-05-2003)
    “…Photoluminescence and time-resolved photoluminescence measurements of charge tunable quantum-dot heterostructures reveal that by appropriate biasing of the…”
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    Journal Article
  20. 20

    Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm by Smith, J. M., Buller, G. S., Marshall, D., Miller, A., Button, C. C.

    Published in Applied physics letters (18-03-2002)
    “…Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 1014 and 1016 cm−3…”
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    Journal Article