Search Results - "Buller, G S"
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1
Imaging high-dimensional spatial entanglement with a camera
Published in Nature communications (07-08-2012)“…The light produced by parametric down-conversion shows strong spatial entanglement that leads to violations of EPR criteria for separability. Historically,…”
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2
Secure polarization-independent subcarrier quantum key distribution in optical fiber channel using BB84 protocol with a strong reference
Published in Optics express (08-02-2016)“…A quantum key distribution system based on the subcarrier wave modulation method has been demonstrated which employs the BB84 protocol with a strong reference…”
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3
Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
Published in Applied physics letters (05-01-2004)“…Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by…”
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4
Spatial dependence of output pulse delay in a niobium nitride nanowire superconducting single-photon detector
Published in Applied physics letters (16-05-2011)“…We report on the position-dependent variation in output pulse timing across a superconducting single-photon detector. Our device consists of a single niobium…”
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5
Single photon sources based upon single quantum dots in semiconductor microcavity pillars
Published in Journal of modern optics (20-01-2007)“…Semiconductor microcavity pillars with both circular and elliptical cross-section containing semiconductor quantum dots are shown to be good candidates for…”
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Journal Article Conference Proceeding -
6
Passive Optical Network Approach to Gigahertz-Clocked Multiuser Quantum Key Distribution
Published in IEEE journal of quantum electronics (01-02-2007)“…We present the application of quantum key distribution (QKD) technologies to fiber-based broad-band passive optical access networks. This application is based…”
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7
A short wavelength GigaHertz clocked fiber-optic quantum key distribution system
Published in IEEE journal of quantum electronics (01-07-2004)“…A quantum key distribution (QKD) system has been developed, using a standard telecommunications optical fiber, which is capable of operating at clock rates of…”
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8
Design and performance of an InGaAs-InP single-photon avalanche diode detector
Published in IEEE journal of quantum electronics (01-04-2006)“…This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon…”
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9
Fourier relationship between the angle and angular momentum of entangled photons
Published in Physical review. A, Atomic, molecular, and optical physics (08-10-2008)Get full text
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10
Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots
Published in Japanese Journal of Applied Physics (01-02-1999)“…The relaxation mechanisms of an array of 10 vertically coupled layers of InGaAs/AlGaAs quantum dots were studied by time-resolved photoluminescence. Both…”
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11
Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures
Published in Journal of crystal growth (1998)“…A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier…”
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12
Quantum correlations in position, momentum, and intermediate bases for a full optical field of view
Published in Physical review. A, Atomic, molecular, and optical physics (20-01-2012)“…We report an eight-element, linear-array, single-photon detector that uses multiple fibers of differing lengths coupled to a single detector, the timing…”
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13
Evidence of carrier confinement in nonlinear GaAs/AlGaAs multiple quantum-well microresonators fabricated using alloy mixing techniques
Published in Applied physics letters (02-11-1992)“…Time-resolved photoluminescence measurements with <5 μm spatial resolution have provided direct evidence of carrier confinement in micrometer-dimensioned…”
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14
Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates
Published in Applied physics letters (23-05-2005)“…Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with…”
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15
Growth and characterization of ZnSe based blue green VCSELs
Published in Journal of materials science. Materials in electronics (01-06-1998)“…Blue green vertical cavity surface emitting lasers (VCSELs) have been produced in which the active region comprised molecular beam epitaxy (MBE) grown ZnSe…”
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16
All-optical routing networks based on bistable interferometers
Published in Applied physics letters (19-12-1988)“…The possibility of using bistable nonlinear Fabry–Perot interferometers as wide-band data transparent all-optical spatial switches has been investigated. It…”
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17
A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy
Published in Journal of crystal growth (01-02-1996)“…In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn0.25Cd0.75SeZnSe single quantum well…”
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Journal Article Conference Proceeding -
18
Hot pixel classification of single‐photon avalanche diode detector arrays using a log‐normal statistical distribution
Published in Electronics letters (05-09-2019)“…CMOS single‐photon avalanche diode (SPAD) detector arrays are commonly used in low‐light imaging applications, and are known to suffer from certain defects…”
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19
Carrier storage and capture dynamics in quantum-dot heterostructures
Published in Applied physics letters (26-05-2003)“…Photoluminescence and time-resolved photoluminescence measurements of charge tunable quantum-dot heterostructures reveal that by appropriate biasing of the…”
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20
Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm
Published in Applied physics letters (18-03-2002)“…Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 1014 and 1016 cm−3…”
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