Search Results - "Buehl, Trevor E."

Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy by Buehl, Trevor E., LeBeau, James M., Stemmer, Susanne, Scarpulla, Michael A., Palmstrøm, Christopher J., Gossard, Arthur C.

“…The low solubility of Er in GaAs results in the formation of ErAs nanostructures when GaAs is grown with 5–6 at% Er/Ga ratio by molecular beam epitaxy on GaAs…”
Get full text

Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN by Jeonghee Kim, Toledo, N. G., Lal, S., Jing Lu, Buehl, T. E., Mishra, U. K.

“…This letter reports wafer-bonded p-n heterojunction diodes, which consist of GaAs and chemomechanically polished N-polar GaN. The measured I - V and C - V show…”
Get full text

Erratum to: Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature by Burke, Peter G., Buehl, Trevor E., Pernot, Gilles, Lu, Hong, Shakouri, Ali, Palmstrom, Chris J., Bowers, John E., Gossard, Arthur C.

Get full text

Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature by Burke, Peter G., Buehl, Trevor E., Gilles, Pernot, Lu, Hong, Shakouri, Ali, Palmstrom, Chris J., Bowers, John E., Gossard, Arthur C.

“…Under certain growth conditions in molecular beam epitaxy, erbium, indium, gallium, and arsenic form a two-phase composite, consisting of ErAs nanoparticles…”
Get full text

Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles by Selezneva, Ekaterina, Clinger, Laura E., Ramu, Ashok T., Pernot, Gilles, Buehl, Trevor E., Favaloro, Tela, Bahk, Je-Hyeong, Bian, Zhixi, Bowers, John E., Zide, Joshua M. O., Shakouri, Ali

“…Thermoelectric transport properties of InGaAs with a high concentration of embedded semimetallic TbAs nanoparticles were studied in a 300–600 K temperature…”
Get full text

Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature by Burke, Peter G., Buehl, Trevor E., Gilles, Pernot, Lu, Hong, Shakouri, Ali, Palmstrom, Chris J., Bowers, John E., Gossard, Arthur C.

Get full text

Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles by Selezneva, Ekaterina, Clinger, Laura E., Ramu, Ashok T., Pernot, Gilles, Buehl, Trevor E., Favaloro, Tela, Bahk, Je-Hyeong, Bian, Zhixi, Bowers, John E., Zide, Joshua M. O., Shakouri, Ali

Get full text

Semimetallic Nanorods Embedded in High-Index Semiconductors by Buehl, Trevor E

“…The first reported work on nanowire growth occurred decades ago and has now been successfully reported for a wide range of both metallic and semiconducting…”
Get full text

Semimetallic Nanorods Embedded in High-Index Semiconductors by Buehl, Trevor E

“…The first reported work on nanowire growth occurred decades ago and has now been successfully reported for a wide range of both metallic and semiconducting…”
Get full text

Cross-Sectional Scanning Tunneling Microscopy and Spectroscopy of Semimetallic ErAs Nanostructures Embedded in GaAs by Kawasaki, Jason K, Timm, Rainer, Buehl, Trevor E, Lundgren, Edvin, Mikkelsen, Anders, Gossard, Arthur C, Palmstrøm, Chris J

“…J. Vac. Sci. Technol. B 29, 03C104 (2011) The growth and atomic/electronic structure of molecular beam epitaxy (MBE)-grown ErAs nanoparticles and nanorods…”
Get full text