Search Results - "Buehl, T. E."

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  1. 1
    Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles

    Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles by Selezneva, Ekaterina, Clinger, Laura E., Ramu, Ashok T., Pernot, Gilles, Buehl, Trevor E., Favaloro, Tela, Bahk, Je-Hyeong, Bian, Zhixi, Bowers, John E., Zide, Joshua M. O., Shakouri, Ali

    Published in Journal of electronic materials (01-06-2012)
    “…Thermoelectric transport properties of InGaAs with a high concentration of embedded semimetallic TbAs nanoparticles were studied in a 300–600 K temperature…”
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    Journal Article Conference Proceeding
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  2. 2
    Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

    Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN by Jeonghee Kim, Toledo, N. G., Lal, S., Jing Lu, Buehl, T. E., Mishra, U. K.

    Published in IEEE electron device letters (01-01-2013)
    “…This letter reports wafer-bonded p-n heterojunction diodes, which consist of GaAs and chemomechanically polished N-polar GaN. The measured I - V and C - V show…”
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  3. 3
    Controlling sub(n)-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

    Controlling sub(n)-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature by Burke, P G, Buehl, TE, Gilles, P, Lu, H, Shakouri, A

    Published in Journal of electronic materials (01-05-2012)
    “…Under certain growth conditions in molecular beam epitaxy, erbium, indium, gallium, and arsenic form a two-phase composite, consisting of ErAs nanoparticles…”
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