Search Results - "Bude, J"

Laser-supported solid-state absorption fronts in silica by Carr, C. W., Bude, J. D., DeMange, P.

“…We develop a model based on simulation and experiment that explains the behavior of solid-state laser-supported absorption fronts generated in fused silica…”
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High fluence laser damage precursors and their mitigation in fused silica by Bude, J, Miller, P, Baxamusa, S, Shen, N, Laurence, T, Steele, W, Suratwala, T, Wong, L, Carr, W, Cross, D, Monticelli, M

“…The use of any optical material is limited at high fluences by laser-induced damage to optical surfaces. In many optical materials, the damage results from a…”
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Particle damage sources for fused silica optics and their mitigation on high energy laser systems by Bude, J, Carr, C W, Miller, P E, Parham, T, Whitman, P, Monticelli, M, Raman, R, Cross, D, Welday, B, Ravizza, F, Suratwala, T, Davis, J, Fischer, M, Hawley, R, Lee, H, Matthews, M, Norton, M, Nostrand, M, VanBlarcom, D, Sommer, S

“…High energy laser systems are ultimately limited by laser-induced damage to their critical components. This is especially true of damage to critical fused…”
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Mitigation of organic laser damage precursors from chemical processing of fused silica by Baxamusa, S, Miller, P E, Wong, L, Steele, R, Shen, N, Bude, J

“…Increases in the laser damage threshold of fused silica have been driven by the successive elimination of near-surface damage precursors such as polishing…”
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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric by Ye, P. D., Yang, B., Ng, K. K., Bude, J., Wilk, G. D., Halder, S., Hwang, J. C. M.

“…We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric…”
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Increased Ion Temperature and Neutron Yield Observed in Magnetized Indirectly Driven D 2 -Filled Capsule Implosions on the National Ignition Facility by Moody, J. D., Pollock, B. B., Sio, H., Strozzi, D. J., Ho, D. D.-M., Walsh, C. A., Kemp, G. E., Lahmann, B., Kucheyev, S. O., Kozioziemski, B., Carroll, E. G., Kroll, J., Yanagisawa, D. K., Angus, J., Bachmann, B., Bhandarkar, S. D., Bude, J. D., Divol, L., Ferguson, B., Fry, J., Hagler, L., Hartouni, E., Herrmann, M. C., Hsing, W., Holunga, D. M., Izumi, N., Javedani, J., Johnson, A., Khan, S., Kalantar, D., Kohut, T., Logan, B. G., Masters, N., Nikroo, A., Orsi, N., Piston, K., Provencher, C., Rowe, A., Sater, J., Skulina, K., Stygar, W. A., Tang, V., Winters, S. E., Zimmerman, G., Adrian, P., Chittenden, J. P., Appelbe, B., Boxall, A., Crilly, A., O’Neill, S., Davies, J., Peebles, J., Fujioka, S.

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Mechanisms of laser-induced damage in absorbing glasses with nanosecond pulses by Demos, S G, Hoffman, B N, Carr, C W, Cross, D A, Negres, R A, Bude, J D

“…The propagation of 355-nm, nanosecond pulses in absorbing glasses is investigated for the specific case examples of the broadband absorbing glass SuperGrey and…”
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Production of high fluence laser beams using ion wave plasma optics by Kirkwood, R. K., Poole, P. L., Kalantar, D. H., Chapman, T. D., Wilks, S. C., Edwards, M. R., Turnbull, D. P., Michel, P., Divol, L., Fisch, N. J., Norreys, P., Rozmus, W., Bude, J., Blue, B. E., Fournier, K. B., Van Wonterghem, B. M., MacKinnon, A.

“…Optical components for laser beams with high peak and averaged powers are being developed worldwide using stimulated plasma scattering that occurs when plasmas…”
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Role of defects in laser-induced modifications of silica coatings and fused silica using picosecond pulses at 1053 nm: II. Scaling laws and the density of precursors by Laurence, T A, Negres, R A, Ly, S, Shen, N, Carr, C W, Alessi, D A, Rigatti, A, Bude, J D

“…We investigate the role of defects in laser-induced damage of fused silica and of silica coatings produced by e-beam and PIAD processes which are used in…”
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The role of defects in laser-induced modifications of silica coatings and fused silica using picosecond pulses at 1053 nm: I. Damage morphology by Ly, S, Shen, N, Negres, R A, Carr, C W, Alessi, D A, Bude, J D, Rigatti, A, Laurence, T A

“…Laser-induced damage with ps pulse widths straddles the transition from intrinsic, multi-photon ionization and avalanche ionization-based ablation with fs…”
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Damage modeling and statistical analysis of optics damage performance in MJ-class laser systems by Liao, Zhi M, Raymond, B, Gaylord, J, Fallejo, R, Bude, J, Wegner, P

“…Modeling the lifetime of a fused silica optic is described for a multiple beam, MJ-class laser system. This entails combining optic processing data along with…”
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First-principles calculations of the Urbach tail in the optical absorption spectra of silica glass by Sadigh, B, Erhart, P, Åberg, D, Trave, A, Schwegler, E, Bude, J

“…We present density-functional theory calculations of the optical absorption spectra of silica glass for temperatures up to 2400 K. The calculated spectra…”
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The Magnetized Indirect Drive Project on the National Ignition Facility by Moody, J. D., Pollock, B. B., Sio, H., Strozzi, D. J., Ho, D. D.-M., Walsh, C., Kemp, G. E., Kucheyev, S. O., Kozioziemski, B., Carroll, E. G., Kroll, J., Yanagisawa, D. K., Angus, J., Bhandarkar, S. D., Bude, J. D., Divol, L., Ferguson, B., Fry, J., Hagler, L., Hartouni, E., Herrmann, M. C., Hsing, W., Holunga, D. M., Javedani, J., Johnson, A., Kalantar, D., Kohut, T., Logan, B. G., Masters, N., Nikroo, A., Orsi, N., Piston, K., Provencher, C., Rowe, A., Sater, J., Skulina, K., Stygar, W. A., Tang, V., Winters, S. E., Chittenden, J. P., Appelbe, B., Boxall, A., Crilly, A., O’Neill, S., Davies, J., Peebles, J., Fujioka, S.

“…A new project is underway at the National Ignition Facility with the goal of applying a seed magnetic field to the fusion fuel in an indirect drive hohlraum…”
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Dynamics of transient absorption in bulk DKDP crystals following laser energy deposition by Negres, R A, Raman, R N, Bude, J D, Feit, M D, Demos, S G

“…The transient changes in the optical properties of bulk DKDP material arising from its exposure to high temperatures and pressures associated with localized…”
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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition by Ye, P. D., Wilk, G. D., Yang, B., Kwo, J., Gossmann, H.-J. L., Hong, M., Ng, K. K., Bude, J.

“…Recently, significant progress has been made on GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using atomic-layer deposition (ALD)-grown…”
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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition by Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

“…For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel…”
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Monte Carlo simulation of the CHISEL flash memory cell by Bude, J.D., Pinto, M.R., Smith, R.K.

“…This work shows how physically-based hot carrier simulation was used to understand the importance of CHannel Initiated Secondary ELectron (CHISEL) injection in…”
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Tunneling into interface states as reliability monitor for ultrathin oxides by Ghetti, A., Sangiorgi, E., Bude, J., Sorsch, T.W., Weber, G.

“…This paper reports experimental data and simulations of low-voltage tunneling in ultrathin oxide MOS devices. When the substrate is very heavily doped, a…”
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Advances in high κ gate dielectrics for Si and III–V semiconductors by Kwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T.

“…Our ability of controlling the growth and interfaces of thin dielectric films on III–V semiconductors by ultrahigh vacuum deposition has led to investigations…”
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Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition by Ye, P.D., Wilk, G.D., Yang, B., Chu, S.N.G., Ng, K.K., Bude, J.

“…Oxide surface passivation grown by atomic layer deposition (ALD) has been applied to GaAs metal–semiconductor field-effect transistors (MESFETs). The breakdown…”
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