Search Results - "Buczko, M."

0.13 \mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G., Diop, M., Chevalier, P., Troillard, G., Loubet, N., Bouvier, J., Depoyan, L., Derrier, N., Buczko, M., Leyris, C., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Revil, N., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

“…This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz f T /f MAX )…”
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A selective epitaxy collector module for high-speed Si/SiGe:C HBTs by Geynet, B., Chevalier, P., Brossard, F., Vandelle, B., Schwartzmann, T., Buczko, M., Avenier, G., Dutartre, D., Dambrine, G., Danneville, F., Chantre, A.

“…This paper presents the results of investigations on high-speed self-aligned Si/SiGe:C HBTs featuring a selective epitaxial growth of the collector. We detail…”
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Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs by Lacave, T, Chevalier, P, Campidelli, Y, Buczko, M, Depoyan, L, Berthier, L, Avenier, G, Gaquière, C, Chantre, A

“…This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get f MAX above 400 GHz. The effects of the final spike…”
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Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands by Gauthier, A., Brezza, E., Montagne, A., Guitard, N., Goncalves, J. Azevedo, Buczko, M., Jan, S., Derrier, N., Celi, D., Deglise-Favre, C., Ma, J., Audouin, H., Deprat, F., Ristoiu, I D., Berthier, L., Clement, L., Grelaud, B., Rougier, C., Chevalier, P.

“…This paper discusses technological choices and resulting performances of an innovative Si/SiGe HBT architecture developed for a new 55-nm BiCMOS platform from…”
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PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications by Chevalier, P., Gianesello, F., Pallotta, A., Goncalves, J. Azevedo, Bertrand, G., Borrel, J., Boissonnet, L., Brezza, E., Buczko, M., Canderle, E., Celi, D., Cremer, S., Derrier, N., Diouf, C., Durand, C., Foussadier, F., Garcia, P., Guitard, N., Fleury, A., Gauthier, A., Kermarrec, O., Lajoinie, J., Legrand, C.A., Milon, V., Monsieur, F., Mourier, Y., Muller, D., Ney, D., Paulin, R., Pelloux, N., Renard, C., Rellier, M.L., Scheer, P., Sicard, I., Vulliet, N., Juge, A., Granger, E., Gloria, D., Uginet, J., Garchery, L., Paillardet, F.

“…While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard…”
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Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC by Gianesello, F., Monroy, A., Vialla, V., Canderle, E., Bertrand, G., Buczko, M., Coly, M., Nowakowski, Jeff, Revil, N., Rolland, L., Gloria, D., Juge, A., Gachon, S., Aubert, J. P., Granger, E.

“…RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the…”
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High field transport characterization in nano MOSFETs using 10GHz capacitance measurements by Diouf, C., Cros, A., Gloria, D., Rosa, J., Buczko, M., Ghibaudo, G.

“…10 GHz capacitance measurements are performed for the first time to reliably measure the inversion charge in downscaled devices. Effective mobility and average…”
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A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX by Chevalier, P., Pourchon, F., Lacave, T., Avenier, G., Campidelli, Y., Depoyan, L., Troillard, G., Buczko, M., Gloria, D., Celi, D., Gaquiere, C., Chantre, A.

“…This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f MAX . The…”
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Determination of boron in glass by neutron transmission method by SZEGEDI, S, VARADI, M, BUCZKO, C. M, VARNAGY, M, SZTARICSKAI, T

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0.13mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Voinigescu, S P, Revil, N, Chevalier, P, Pruvost, S, Bouvier, J, Avenier, G, Troillard, G, Depoyan, L, Buczko, M, Montusclat, S, Margain, A, Nicolson, S T, Yau, K.H.K., Gloria, D, Chantre, A, Diop, M, Loubet, N, Derrier, N, Leyris, C

“…This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz…”
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SiGe HBTs featuring fT ≫400GHz at room temperature by Geynet, B., Danneville, F., Dutartre, D., Chantre, A., Chevalier, P., Vandelle, B., Brossard, F., Zerounian, N., Buczko, M., Gloria, D., Aniel, F., Dambrine, G.

“…This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe…”
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0.13 [Formula Omitted]m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G, Diop, M, Chevalier, P, Troillard, G, Loubet, N, Bouvier, J, Depoyan, L, Derrier, N, Buczko, M, Leyris, C, Boret, S, Montusclat, S, Margain, A, Pruvost, S, Nicolson, S.T, Yau, K.H.K, Revil, N, Gloria, D, Dutartre, D, Voinigescu, S.P, Chantre, A

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Uranium and thorium analyses by delayed fission neutron counting technique using a small neutron generator by MUMBA, N. K, VAS, L, BUCZKO, C. M

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Determination of the bitumen content in asphalt concrete using a neutron reflection method by Buczkó, M., Dezső, Z., Csikai, J.

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Targets for bulk hydrogen analysis using thermal neutrons by Csikai, J., Király, B., Buczkó, Cs.M.

“…The reflection property of substances can be characterized by the reflection cross-section of thermal neutrons, σ β. A combination of the targets with thin…”
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0.13μm SiGe BiCMOS technology for mm-wave applications by Avenier, G., Chevalier, P., Troillard, G., Vandelle, B., Brossard, F., Depoyan, L., Buczko, M., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

“…This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f T /f MAX )…”
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Effect of climate on chemical composition of fossil bones by BUCZKO, CS. M, VAS, L

“…The authors report a fluctuation of the nitrogen (N) content of fossil bones which correlates with climatic change. The concentration of N, Fe, Al, and Ca in…”
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A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications by Chevalier, P., Cacho, F., Durand, C., Derrier, N., Milon, V., Monsieur, F., Gauthier, A., Billy, P., Fregonese, S., Zimmer, T., Audouin, H., Buczko, M., Celi, D., Deglise-Favre, C., Diouf, C., Foissey, O., Hello, M., Guitard, N., Madassamy, S., Ramirez-Ruiz, S., Renard, C., Sonnerat, F., Yon, V., Gloria, D., Waltisperger, G.

“…This paper presents how the BiCMOS055X technology from STMicroelectronics is defined to serve wired, wireless, and satcom applications with a versatile…”
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Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs by Canderle, E., Chevalier, P., Montagne, A., Moynet, L., Avenier, G., Boulenc, P., Buczko, M., Carminati, Y., Rosa, J., Gaquiere, C., Chantre, A.

“…The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The…”
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The concept of the reflection cross section of thermal neutrons by Csikai, J, Buczkó, Cs.M

“…The reflection cross section of thermal neutrons as a microscopic parameter for the characterization of the reflection property of substances has been…”
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