Search Results - "Buckle, P D"

Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition by ANDROULAKIS, J, GARDELIS, S, GIAPINTZAKIS, J, BUCKLE, P. D

“…We have grown films of the half-metallic ferromagnet NiMnSb on single crystals of the narrow gap semiconductor InSb by pulsed laser deposition. NiMnSb is a…”
Get full text

Giant enhanced g-factors in an InSb two-dimensional gas by Nedniyom, B., Nicholas, R. J., Emeny, M. T., Buckle, L., Gilbertson, A. M., Buckle, P. D., Ashley, T.

Get full text

Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition by Gardelis, S., Androulakis, J., Giapintzakis, J., Monnereau, O., Buckle, P. D.

“…We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on…”
Get full text

Electronic transport in modulation-doped InSb quantum well heterostructures by Orr, J. M. S., Gilbertson, A. M., Fearn, M., Croad, O. W., Storey, C. J., Buckle, L., Emeny, M. T., Buckle, P. D., Ashley, T.

Get full text

Room temperature ballistic transport in InSb quantum well nanodevices by Gilbertson, A. M., Kormányos, A., Buckle, P. D., Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A., Cohen, L. F.

“…We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an…”
Get full text

Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition by Luxmoore, I.J., Ross, I.M., Cullis, A.G., Fry, P.W., Orr, J., Buckle, P.D., Jefferson, J.H.

“…In this study we have fabricated tungsten containing nano-wires using focused electron and ion beams from a tungsten hexacarbonyl precursor. The temperature…”
Get full text

Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures by Pooley, O J, Gilbertson, A M, Buckle, P D, Hall, R S, Buckle, L, Emeny, M T, Fearn, M, Cohen, L F, Ashley, T

Get full text

A surface-gated InSb quantum well single electron transistor by Orr, J M S, Buckle, P D, Fearn, M, Storey, C J, Buckle, L, Ashley, T

Get full text

Effects of depletion on the emission from individual InGaN dots by Sherliker, B., Halsall, M. P., Buckle, P. D., Parbrook, P. J., Wang, T.

“…We report a photoluminescence (PL) study of the effects of carrier depletion on the electronic states of InGaN quantum dots. Samples were fabricated into mesa…”
Get full text

Tunnel Structures as Probes of New Physics [and Discussion] by Main, P. C., Buckle, P. D.

“…The use of tunnelling and, in particular, resonant tunnelling devices to study basic physics is reviewed. Three principal areas are discussed. First, the use…”
Get full text

High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb by Alexander-Webber, J. A., Baker, A. M. R., Buckle, P. D., Ashley, T., Nicholas, R. J.

Get full text

Optical properties of single charge tuneable InGaAs quantum dots by Ashmore, A.D, Finley, J.J, Oulton, R, Fry, P.W, Lemaı̂tre, A, Mowbray, D.J, Skolnick, M.S, Hopkinson, M, Buckle, P.D, Maksym, P.A

“…We present a magneto-optical investigation of neutral and charged few-exciton complexes in individual In 0.5Ga 0.5As self-assembled quantum dots. The results…”
Get full text

An inter-subband device with terahertz applications by Buckle, P.D., Dawson, P., Lynch, M.A., Chun-Yi Kuo, Missous, M., Truscott, W.S.

“…A theoretical analysis of a modulator based on two coupled resonators is presented in this paper. This modulator exhibits a resonant enhancement in its…”
Get full text

Room temperature ballistic transport in InSb quantum well nanodevices by Gilbertson, A. M, Kormanyos, A, Buckle, P. D, Fearn, M, Ashley, T, Lambert, C. J, Solin, S. A, Cohen, L. F

“…We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an…”
Get full text

High density, spatially separated electron/hole plasmas in mixed type I-type II GaAs/AlAs heterostructures by Buckle, P.D., Dawson, P.

“…By the choice of appropriate layer thicknesses in the GaAs/AlAs materials system it is possible to create a mixed type I–type II band alignment. In such…”
Get full text

THz detectors with HgTe and InSb quantum wells by Gouider, F, Vasilyev, Y B, Könemann, J, Brüne, C, Buhmann, H, Buckle, P D, Nachtwei, G

“…Terahertz-frequencies in semiconductor quantum wells are of interest due to the opportunity for making devices that operate at THz frequencies. In this study…”
Get full text

High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures by Gilbertson, A. M, Branford, W. R, Fearn, M, Buckle, L, Buckle, P. D, Ashley, T, Cohen, L. F

“…We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied…”
Get full text

A Surface-Gated InSb Quantum Well Single Electron Transistor by Orr, J. M. S, Buckle, P. D, Fearn, M, Storey, C. J, Buckle, L, Ashley, T

“…Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass,…”
Get full text

Electroluminescence recombination from excited-state carrier populations in double-barrier resonant-tunneling structures by COCKBURN, J. W, BUCKLE, P. D, SKOLNICK, M. S, WHITTAKER, D. M, TAGG, W. I. E, HOGG, R. A, GREY, R, HILL, G, PATE, M. A

Get full text

Evidence for population inversion in excited electron states of a double barrier resonant tunneling structure by Cockburn, J. W., Skolnick, M. S., Whittaker, D. M., Buckle, P. D., Willcox, A. R. K., Smith, G. W.

“…We report evidence for a population inversion between excited electron states of the quantum well of a GaAs-AlGaAs double barrier resonant tunneling structure…”
Get full text