Search Results - "Buchner, Stephen"

2018 IEEE Nuclear and Space Radiation Effects Conference Awards Comments by the Chairman by Buchner, Stephen P.

“…It is a long-standing tradition of the IEEE Nuclear and Space Radiation Effects Conference (NSREC) to recognize the Outstanding Conference Paper, the…”
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Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach by Hales, Joel M., Ildefonso, Adrian, Buchner, Stephen P, Khachatrian, Ani, Allen, Greg, McMorrow, Dale

“…A recently mymargin developed pulsed-laser (PL) testing approach, which uses a quasi-Bessel beam (QBB) to better emulate a heavy-ion charge profile, is…”
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Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology by Al Seragi, Ebrahim M., Dash, Subhra, Muthuseenu, K., Cressler, John D., Barnaby, Hugh J., Khachatrian, Ani, Buchner, Stephen P., McMorrow, Dale, Zeinolabedinzadeh, Saeed

“…This article presents novel radiation hardening design techniques to substantially reduce the single-event effects (SEEs) on high-frequency receivers subject…”
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Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects by Mishu, Pujan K. C., Cho, Moon-Kyu, Khachatrian, Ani, Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Cressler, John D., Song, Ickhyun

“…The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing…”
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Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption by Tzintzarov, George N., Ildefonso, Adrian, Teng, Jeffrey W., Frounchi, Milad, Djikeng, Albert, Iyengar, Prahlad, Goley, Patrick S., Khachatrian, Ani, Hales, Joel, Bahr, Ryan, Buchner, Stephen P., Mcmorrow, Dale, Cressler, John D.

“…Optical single-event transients (OSETs) were measured for the first time in integrated silicon-photonic waveguides. A custom test fixture and novel…”
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Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits by Sarker, Md Arifur R, Jung, Seungwoo, Ildefonso, Adrian, Khachatrian, Ani, Buchner, Stephen P, McMorrow, Dale, Paki, Pauline, Cressler, John D, Song, Ickhyun

“…It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve…”
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Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI by Ildefonso, Adrian, Warner, Jeffrey H., Cressler, John D., Tzintzarov, George N., Nergui, Delgermaa, Omprakash, Anup P., Goley, Patrick S., Hales, Joel M., Khachatrian, Ani, Buchner, Stephen P., McMorrow, Dale

“…A comparison of heavy-ion-induced single-event transients (SETs) in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk…”
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Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs by Ildefonso, Adrian, Fleetwood, Zachary E., Tzintzarov, George N., Hales, Joel M., Nergui, Delgermaa, Frounchi, Milad, Khachatrian, Ani, Buchner, Stephen P., Mcmorrow, Dale, Warner, Jeffrey H., Harms, Joseph, Erickson, Anna, Voss, Kay, Ferlet-Cavrois, Veronique, Cressler, John D.

“…An approach for determining the optimal laser parameters (i.e., pulse energy, focused spot size, wavelength, and pulse duration) for correlating single-event…”
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Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform by Ildefonso, Adrian, Tzintzarov, George N., Lourenco, Nelson E., Fleetwood, Zachary E., Khachatrian, Ani, Buchner, Stephen P, McMorrow, Dale, Warner, Jeffrey H., Kaynak, Mehmet, Cressler, John D.

“…Low-noise amplifiers (LNAs) are necessary components for any communications system. Single-event transients (SETs) induced by energetic particles in space can…”
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Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation by Ryder, Kaitlyn L., Ryder, Landen D., Sternberg, Andrew L., Kozub, John A., Zhang, En Xia, LaLumondiere, Stephen D., Monahan, Daniele M., Bonsall, Jeremy P., Khachatrian, Ani, Buchner, Stephen P., McMorrow, Dale, Hales, Joel M., Zhao, Yuanfu, Wang, Liang, Wang, Chuanmin, Weller, Robert A., Schrimpf, Ronald D., Weiss, Sharon M., Reed, Robert A.

“…Heavy-ion, focused X-ray, and pulsed laser single-event transient (SET) experiments are performed on a silicon epitaxial diode. Collected charge, transient…”
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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements by Khachatrian, Ani, Roche, Nicolas J.-H, McMorrow, Dale, Warner, Jeffrey H., Buchner, Stephen P., Melinger, Joseph S.

“…A pulsed-laser dosimetry approach for two-photon absorption (TPA) single-event effects (SEE) measurements is presented. Development and implementation of three…”
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The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs by Lourenco, Nelson E., Fleetwood, Zachary E., Ildefonso, Adrian, Wachter, Mason T., Roche, Nicolas J-H, Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Itsuji, Hiroaki, Kobayashi, Daisuke, Hirose, Kazuyuki, Paki, Pauline, Raman, Ashok, Cressler, John D.

“…The impact of semiconductor process scaling on the overall transient response of SiGe BiCMOS platforms is investigated. Pulsed-laser two-photon absorption…”
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Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform by Tzintzarov, George N., Buchner, Stephen P., McMorrow, Dale, Warner, Jeffrey H., Kaynak, Mehmet, Zimmermann, Lars, Cressler, John D., Ildefonso, Adrian, Goley, Patrick S., Frounchi, Milad, Nergui, Delgermaa, Rao, Sunil G., Teng, Jeffrey, Campbell, Jacob, Khachatrian, Ani

“…The propagation of single-event transients from the electrical to the photonic domain in a segmented Mach-Zehnder modulator was investigated using pulsed-laser…”
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Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique by Khachatrian, Ani, Roche, Nicolas J-H, Buchner, Stephen P., Koehler, Andrew D., Greenlee, Jordan D., Anderson, Travis J., Warner, Jeffrey H., McMorrow, Dale

“…Carrier injection by single-photon absorption using ultraviolet optical pulses is used to investigate single-event transients in pristine and proton-irradiated…”
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An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology by Cho, Moon-Kyu, Song, Ickhyun, Pavlidis, Spyridon, Fleetwood, Zachary E., Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Cressler, John D.

“…The impact of electrostatic discharge (ESD) protection circuits on the single-event transients (SETs) of RF building blocks in a 130-nm SiGe BiCMOS (8HP)…”
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Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation by Moon-Kyu Cho, Ickhyun Song, Zachary, Fleetwood E., Khachatrian, Ani, Warner, Jeffrey H., Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Cressler, John D.

“…We provide "best practices" for single-event transient (SET) mitigation using electrostatic discharge (ESD) protection techniques. We investigate the…”
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On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients by Ickhyun Song, Moon-Kyu Cho, Oakley, Michael A., Ildefonso, Adrian, Inchan Ju, Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Cressler, John D.

“…Best practice in mitigation strategies for single-event transients (SETs) in radio-frequency (RF) receiver modules is investigated using a variety of…”
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The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology by Omprakash, Anup P., Ildefonso, Adrian, Fleetwood, Zachary E., Tzintzarov, George N., Cardoso, Adilson S., Babcock, Jeffrey A., Mukhopadhyay, Rajarshi, Khachatrian, Ani, Warner, Jeffrey H., McMorrow, Dale, Buchner, Stephen P., Cressler, John D.

“…The single-event transient response of a high-voltage complementary SiGe-on-silicon-on-insulator technology is investigated along with its temperature…”
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Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs by Ickhyun Song, Seungwoo Jung, Lourenco, Nelson E., Raghunathan, Uppili S., Fleetwood, Zachary E., Zeinolabedinzadeh, Saeed, Gebremariam, Tikurete B., Inanlou, Farzad, Roche, Nicholas J.-H, Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Melinger, Joseph S., Warner, Jeffrey H., Paki-Amouzou, Pauline, Cressler, John D.

“…A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the…”
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p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform by Song, Ickhyun, Cho, Moon-Kyu, Fleetwood, Zachary E., Gong, Yunyi, Pavlidis, Spyridon, Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Kaynak, Mehmet, Cressler, John. D.

“…The benefits of using p-n-p silicon-germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of…”
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