Search Results - "Bryllert, T."

Vertical high-mobility wrap-gated InAs nanowire transistor by Bryllert, T., Wernersson, L.-E., Froberg, L.E., Samuelson, L.

“…In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a…”
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Penetrating 3-D Imaging at 4- and 25-m Range Using a Submillimeter-Wave Radar by Cooper, K.B., Dengler, R.J., Llombart, N., Bryllert, T., Chattopadhyay, G., Schlecht, E., Gill, J., Lee, C., Skalare, A., Mehdi, I., Siegel, P.H.

“…We show experimentally that a high-resolution imaging radar operating at 576-605 GHz is capable of detecting weapons concealed by clothing at standoff ranges…”
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An Approach for Sub-Second Imaging of Concealed Objects Using Terahertz (THz) Radar by Cooper, K. B., Dengler, R. J., Llombart, N., Bryllert, T., Chattopadhyay, G., Mehdi, I., Siegel, P. H.

“…High-resolution, long-range detection of person-borne concealed weapons has recently been demonstrated using a terahertz imaging radar. However, the radar’s…”
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A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz by Vukusic, J., Bryllert, T., Emadi, T.A., Sadeghi, M., Stake, J.

“…We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal…”
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High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks by Borgstrom, M., Bryllert, T., Sass, T., Gustafson, B., Wernersson, L.-E., Seifert, W., Samuelson, L.

“…Resonant tunneling was observed through single InAs quantum dot (QD) stacks embedded in InP barriers with peak-to-valley ratios as high as 85 at 7 K. Negative…”
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Designed emitter states in resonant tunneling through quantum dots by Bryllert, T., Borgstrom, M., Sass, T., Gustafson, B., Landin, L., Wernersson, L.-E., Seifert, W., Samuelson, L.

“…Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked)…”
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Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots by Bryllert, T., Borgstrom, M., Wernersson, L-E., Seifert, W., Samuelson, L.

“…We investigate resonant tunneling through two coupled self-assembled quantum dots. The strong confinement and the high crystalline quality provided by the…”
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Terahertz radar sensing for real-time monitoring of powder streams by Moradikouchi, A., Bonmann, M., Bryllert, T., Sparen, A., Folestad, S., Johansson, J., Stake, J., Rodilla, H.

“…In pharmaceutical manufacturing processes, the flow properties of powder streams moving in the manufacturing pipes directly impact the properties of the final…”
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InAs quantum dots grown on InAlGaAs lattice matched to InP by Borgstrom, M., Pires, M.P., Bryllert, T., Landi, S., Seifert, W., Souza, P.L.

“…In this paper, we present InAs quantum dots prepared on an In x Al y Ga 1− x− y As surface by metal organic vapor phase epitaxy. Atomic force microscopy…”
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Analytical Extraction of a Schottky Diode Model From Broadband S-Parameters by Aik Yean Tang, Drakinskiy, V., Yhland, K., Stenarson, J., Bryllert, T., Stake, J.

“…We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward…”
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Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions by Borgstrom, M., Bryllert, T., Sass, T., Wernersson, L.-E., Samuelson, L., Seifert, W.

“…In this paper, we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots…”
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Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on Inp surfaces by Borgström, M., Bryllert, T., Gustafson, B., Johansson, J., Sass, T., Wernersson, L. E., Seifert, W., Samuelson, L.

“…A site control technique for individual InAs quantum dots (QDs) formed by self-assembling has been developed, using scanning electron microscope (SEM) assisted…”
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Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power by Vukusic, J., Bryllert, T., Olsen, Øistein, Hanning, J., Stake, J.

“…We present a heterostructure barrier varactor multiplier at 282 GHz. The tripler chip was monolithically fabricated in the InGaAs/InAlAs material system on InP…”
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Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration by Ohlsson, L., Bryllert, T., Gustafson, C., Sjoberg, D., Egard, M., Arlelid, M., Wernersson, L.

“…A readily mass-producible, flip-chip assembled, and slot-coupled III-V compound semiconductor dielectric resonator antenna operating in the millimeter-wave…”
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Time-Delay Multiplexing of Two Beams in a Terahertz Imaging Radar by Llombart, Nuria, Cooper, K B, Dengler, R J, Bryllert, T, Chattopadhyay, G, Siegel, P H

“…We demonstrate a time-delay multiplexing technique that doubles the frame rate of a 660-690-GHz imaging radar with minimal additional instrument complexity…”
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Analysis of the high frequency spreading resistance for surface channel planar Schottky diodes by Tang, A Y, Sobis, P, Zhao, H, Drakinskiy, V, Bryllert, T, Stake, J

“…Spreading resistance of a planar Schottky diode is studied as a function of the frequency and buffer layer thickness. The study shows an increase of effective…”
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Optimum barrier thickness study for the InGaAs∕InAlAs∕AlAs heterostructure barrier varactor diodes by Emadi, T. A., Bryllert, T., Sadeghi, M., Vukusic, J., Stake, J.

“…This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes to improve the diode efficiency…”
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High efficiency and broad-band operation of monolithically integrated W-Band HBV frequency tripler by Malko, A., Bryllert, T., Vukusic, J., Stake, J.

“…We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The…”
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Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology by Drakinskiy, V., Sobis, P., Zhao, H., Bryllert, T., Stake, J.

“…We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre…”
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Development of a 557 GHz GaAs monolithic membrane-diode mixer by Huan Zhao, Drakinskiy, V., Sobis, P., Hanning, J., Bryllert, T., Aik-Yean Tang, Stake, J.

“…We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum…”
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