Search Results - "Brum, JA"

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  1. 1

    Electronic states in semiconductor heterostructures by Bastard, G., Brum, J.

    Published in IEEE journal of quantum electronics (01-09-1986)
    “…This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice…”
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    Journal Article
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    The role of finite hole mass in the negatively charged exciton in two dimensions by A. Narvaez, Gustavo, Hawrylak, Pawel, A. Brum, José

    “…The role of finite hole mass on the ground and excited states of the negatively charged exciton in two dimensions is discussed. We present results of…”
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    Effects of an electron gas on the negative trion in semiconductor quantum wells by Dacal, Luis C.O, Brum, José A

    “…We present here the results of calculations of the negative trion binding energy in the presence of an electron gas. The screening of the Coulomb interaction…”
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    Observation of Tamm states in superlattices by OHNO, H, MENDEZ, E. E, BRUM, J. A, HONG, J. M, AGULLO-RUEDA, F, CHANG, L. L, ESAKI, L

    Published in Physical review letters (21-05-1990)
    “…Tamm states are intentionally introduced in AlGaAs/GaAs superlattices by a terminating layer of AlAs. Formation of these states is manifested by excitonic…”
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    Zeeman bifurcation of quantum-dot spectra by HANSEN, W, SMITH, T. P. III, LEE, K. Y, BRUM, J. A, KNOEDLER, C. M, HONG, J. M, KERN, D. P

    Published in Physical review letters (01-05-1989)
    “…The magnetic-field-induced bifurcation of quantum levels into surface states and bulklike Landau states is observed. The disruption of the electric field…”
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    Micro-photoluminescence of self-assembled quantum dots in the presence of an electron gas by Nakaema, M.K.K., Brasil, M.J.S.P., Iikawa, F., Ribeiro, E., Heinzel, T., Ensslin, K., Medeiros-Ribeiro, G., Petroff, P.M., Brum, J.A.

    “…InGaAs/GaAs self-assembled quantum dots in the presence of a two-dimensional electron gas were studied by micro-photoluminescence. Several sharp optical…”
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    Negative Trion Binding Energy in Semiconductor Quantum Wells: Effects of Structural Confinement and Longitudinal Electric Field by Dacal, L.C.O., Brum, J.A.

    Published in Physica status solidi. A, Applied research (01-04-2002)
    “…We present variational calculations of the binding energy for negatively charged excitons in idealized GaAs/Al0.3Ga0.7As quantum wells using a physically clear…”
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    Journal Article Conference Proceeding
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    Many body effects in a modulation-doped semiconductor quantum well by DELALANDE, C, BASTARD, G, ORGONASI, J, BRUM, J. A, LIU, H. W, VOOS, M, WEIMANN, G, SCHLAPP, W

    Published in Physical review letters (07-12-1987)
    “…The electron areal concentration n(s) of a one-sided, 130 A-thick GaAs- Ga(Al)As modulation-doped quantum well is continuously varied from 0 to 6.6 x 10 to the…”
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    Magneto-excitons in droplets of a chiral Luttinger liquid formed in quantum dots in a magnetic field by Hawrylak, Pawel, Wojs, Arkadiusz, Brum, Jose A.

    Published in Solid state communications (01-06-1996)
    “…Magneto-excitons in droplets of a spin polarized chiral Luttinger liquid formed in quantum dots in a magnetic field are studied. The coupling of…”
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    Screening effects on the spin splitting in n-doped GaAs/AlGaAs quantum wells by Urdanivia, J., Iikawa, F., Brum, J.A., Maialle, M.Z., Hawrylak, P., Wasilewski, Z.

    “…The spin dynamics of free carriers is studied by time-resolved photoluminescence in n-type GaAs/AlGaAs modulation-doped multi-quantum wells. We study a series…”
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    Carrier capture time in T-shaped semiconductor quantum wires by Narvaez, Gustavo A., Aguiar, Maria Carolina de O., Brum, José A

    “…We investigate the capture time from quasi-two-dimensional (2D) electrons to quasi-one-dimensional electrons (1D) in T-shaped semiconductor quantum wires. Two…”
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    Binding Energy of Negatively Charged Exciton in a Semiconductor Quantum Well: The Role of Interface Defects by Dacal, L.C.O., Ferreira, R., Bastard, G., Brum, J.A.

    Published in Physica status solidi. A, Applied research (01-04-2002)
    “…We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/Al0.3Ga0.7As quantum wells. The…”
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    Journal Article Conference Proceeding
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    Mobile excitons and Fermi edge singularities in an interacting 2D electron gas by Brum, J.A., Brown, S., Hawrylak, P., Young, J.F., Wasilewski, Z.

    Published in Surface science (20-07-1996)
    “…We present theoretical and experimental results on the evolution of the threshold absorption of a 2D electron gas as a function of electron density. We pay…”
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    Effects of the Heavy- and Light-Hole Mixing in the Exciton Dynamics in Semiconductor Quantum Wells by de O. Aguiar, M. Carolina, Brum, José A.

    Published in Physica status solidi. A, Applied research (01-03-2000)
    “…We present the calculation of the low temperature exciton bimolecular formation rate in quantum wells through acoustic phonon scattering taking into account…”
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    InGaAs/InP quantum wells with thickness modulation by Brasil, M. J. S. P., Bernussi, A. A., Cotta, M. A., Marquezini, M. V., Brum, J. A., Hamm, R. A., Chu, S. N. G., Harriott, L. R., Temkin, H.

    Published in Applied physics letters (15-08-1994)
    “…We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer…”
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