Search Results - "Brudnyi, V. N."

Structural, elastic and electronic properties of GaSe under biaxial and uniaxial compressive stress by Kosobutsky, A.V., Sarkisov, S.Yu, Brudnyi, V.N.

“…The influence of anisotropic mechanical stresses preserving symmetry of the hexagonal lattice on the structural, elastic and electronic properties of layered…”
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BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping by Brudnyi, V. N.

“…On the basis of the charge neutrality concept, the analysis is fulfilled of the experimental data on the electron properties of the defective semiconductors…”
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Features of Radiation Changes in Electrical Properties of InAlN/GaN Hemts by Afonin, A. G., Brudnyi, V. N., Brudnyi, P. A., Velikovskii, L. E.

“…The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN HEMT structures is analyzed. The features of…”
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Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN by Romanov, I. S., Prudaev, I. A., Brudnyi, V. N.

“…The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p -GaN…”
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Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds by Brudnyi, V. N., Vilisova, M. D., Velikovskii, L. É., Sim, P. Е., Brudnyi, P. A.

“…Experimental data on studying ohmic contacts based on single-layer and multilayer metallizations on GaN and (In, Al, Ga)N solid solutions are analyzed. The…”
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A model for Fermi-level pinning in semiconductors: radiation defects, interface boundaries by Brudnyi, V.N., Grinyaev, S.N., Kolin, N.G.

“…This paper reports the new theoretical model of a defective state with the most localized wave function, which corresponds to the deepest energy level E B…”
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Electrical properties of InAs irradiated with protons by Brudnyi, V. N., Kolin, N. G., Potapov, A. I.

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The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects by Brudnyi, V.N., Grinyaev, S.N., Kolin, N.G.

“…The results of experimental studies of the electrical and optical properties of n- and p-InAs crystals irradiated with electrons at an energy of {approx}2 MeV…”
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Electronic Properties of Silicon with Ultrasmall Germanium Clusters by Brudnyı̆, V. N.

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The U peak in the DLTS spectra of n-GaAs irradiated with fast neutrons and 65-MeV protons by Brudnyi, V. N., Peshev, V. V.

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Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping by Prudaev, I. A., Romanov, I. S., Kopyev, V. V., Brudnyi, V. N., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

“…We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple In x Ga 1–x…”
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The effect of neutron irradiation on the properties of n-InSb whisker microcrystals by Bolshakova, I. A., Boiko, V. M., Brudnyi, V. N., Kamenskaya, I. V., Kolin, N. G., Makido, E. Yu, Moskovets, T. A., Merkurisov, D. I.

“…The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n{sup…”
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Radiation defects in semiconductors under hydrostatic pressure by Brudnyi, V. N.

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Electrical properties and limiting position of the fermi level in InSb irradiated with protons by Brudnyi, V. N., Boiko, V. M., Kamenskaya, I. V., Kolin, N. G.

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The electrical and optical properties of InP irradiated with high integrated fluxes of neutrons by Brudnyi, V. N., Kolin, N. G., Merkurisov, D. I., Novikov, V. A.

“…The results of studying the electrical properties and optical-absorption spectra of InP irradiated with fast neutrons (E > 0.1 MeV and D{sub f.n} {<=} 10{sup…”
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The model of self-compensation and pinning of the Fermi level in irradiated semiconductors by Brudnyĭ, V. N., Kolin, N. G., Smirnov, L. S.

“…A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (Flim) in tetrahedral…”
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Changes in the Optical-Absorption Spectra of Transmutation-Doped GaAs as a Result of Annealing by Brudnyı̆, V. N.

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High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons by Brudnyi, V. N., Novikov, V. A., Peshev, V. V., Kolin, N. G., Noifekh, A. I.

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InxAl1 –xN Solid Solutions: Composition Stability Issues by Brudnyi, V. N., Vilisova, M. D., Velikovskiy, L. E.

“…The phase diagrams of the In x Al 1 – x N solid solutions and conditions for their growth by magnetron sputtering and molecular beam and metalorganic vapor…”
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In.sub.xAl.sub.1 -.sub.xN Solid Solutions: Composition Stability Issues by Brudnyi, V. N, Vilisova, M. D, Velikovskiy, L. E

“…The phase diagrams of the In.sub.xAl.sub.1 -.sub.xN solid solutions and conditions for their growth by magnetron sputtering and molecular beam and metalorganic…”
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