Search Results - "Brown, Y.K."

InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion by Broekaert, T.P.E., Jensen, J.F., Yap, D., Persechini, D.L., Bourgholtzer, S., Fields, C.H., Brown-Boegeman, Y.K., Binqiang Shi, Walden, R.H.

“…A monolithically integrated optical receiver and a 4-bit flash analog-to-digital converter, all in InP HBT technology, have been implemented. The optical…”
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High-speed integrated optoelectronic modulation circuit by Yap, D., Elliott, K.R., Brown, Y.K., Kost, A.R., Ponti, E.S.

“…A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption…”
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InP HBT continuous time 2nd order bandpass /spl Delta//spl Sigma/ modulator and 1-to-16 DEMUX IC with center frequency continuously programmable from 0 to 70 Mhz by Jensen, J.F., Raghavan, G., Stanchina, W., Walden, R.H., Hafizi, M., Sun, H.C., Kardos, M., Brown, Y.K., Montes, M.E.

“…We have implemented a continuous time, 2nd order bandpass /spl Delta//spl Sigma/ modulator, with center frequency tunable from 0 to 70 MHz. The modulator has a…”
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Optimizing InP HBT technology for 50 GHz clock-rate MSI circuits by Sokolich, M., Fields, C., Raghavan, G., Hitko, D.A., Lui, M., Docter, D.P., Brown, Y.K., Case, M.G., Kramer, A.R., Henige, J.A., Jensen, J.F.

“…Using experimental data and a sum of weighted RC time constant model we optimized AlInAs/GaInAs SHBT devices for minimum gate delay in a static divider. The…”
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Analog RF-optoelectronic integrated circuit receivers by Yap, D., Walden, R.H., Xie, Y.-M., Brown, Y.K., Vivilecchia, J., Yee, A.C.

“…Optoelectronic Integrated Circuit (OEIC) receivers have been demonstrated for analog rf-photonic links. The photodetector and preamplifier are both based on…”
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A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology by Sokolich, M., Fields, C., Shi, B., Brown, Y.K., Montes, M., Martinez, R., Kramer, A.R., Thomas, S., Madhav, M.

“…We report a 72.8 GHz fully static frequency divider in AlInAs/InGaAs HBT IC technology. The CML divider operates with a 350 mV logic swing at less than 0 dBm…”
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Implementation of digital circuits in an InP scaled HBT technology by Randall, B.A., Schwab, D.J., Walters, W.L., Nielsen, A.D., Amundsen, E.L.H., Sokolich, M.M., Brown, Y.K., Lui, M.M., Henige, J.A., Gilbert, B.K.

“…The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an indium…”
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A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology by Sokolich, M., Docter, D.P., Brown, Y.K., Kramer, A.R., Jensen, J.F., Stanchina, W.E., Thomas, S., Fields, C.H., Ahmari, D.A., Lui, M., Martinez, R., Duvall, J.

“…We have demonstrated a 52.9 GHz static 1/8 divider in an AlInAs/InGaAs HBT technology. To our knowledge this is the fastest static divider reported in any…”
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An InP-Based HBT 1x8 OEIC Array for a WDM Network by Walden, R.H., Xie, Y-M., Stanchina, W.E., Sun, H.C., Hafizi, M., Brown, Y.K., Kardos, M., Schmitz, A.E., Pikulski, J., Kramer, A.R., Chang, G.K., Cordell, R., Dreze, C., Sitch, J., Pollex, D., Warbrick, K., Chew, C., Jalali, B.

“…An eight-channel optical receiver front-end array has been designed and fabricated using InP-based HBT, IC technology. The 2.5 Gb/s circuits include…”
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An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs by Stanchina, W.E., Jensen, J.F., Walden, R.H., Hafizi, M., Sun, H.-C., Liu, T., Raghavan, C., Elliott, K.E., Kardos, M., Schmitz, A.E., Brown, Y.K., Montes, M.E., Yung, M.

“…Integrated circuits (ICs) utilizing indium phosphide based heterojunction bipolar transistors (HBTs) have set numerous speed and bandwidth records over the…”
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Double heterostructure InP HBT technology for high resolution A/D converters by Jensen, J.F., Cosand, A.E., Stanchina, W.E., Walden, R.H., Lui, T., Brown, Y.K., Montes, M., Elliott, K., Kirkpatrick, C.G.

“…For high resolution analog circuits we have developed a double heterostructure bipolar transistor (DHBT) technology using InP as the collector material. Our…”
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