Search Results - "Brown, D.F."

The Story of the Words I Use by BROWN, D.F.

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Happy Valley above Vinh Thanh by BROWN, D.F.

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Fractured Fairy Tale by BROWN, D.F.

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Six Kinds of Tough Shit by BROWN, D.F.

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Reality Television, 1969 by BROWN, D.F.

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It Was a Long Time before the Bones Spoke by BROWN, D.F.

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Ghost of a Person Passing in Front of the Flag by BROWN, D.F.

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N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier by Man Hoi Wong, Yi Pei, Rongming Chu, Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.

“…We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on…”
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401 Interpreting Red Blood Cells in Lumbar Puncture: Distinguishing True Subarachnoid Hemorrhage From Traumatic Tap by Czuczman, A.D, Thomas, L.E, Boulanger, A.B, Brown, D.F, Marill, K.A

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High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency by Man Hoi Wong, Yi Pei, Brown, D.F., Keller, S., Speck, J.S., Mishra, U.K.

“…A high-performance N-face GaN metal-insulator-semiconductor high-electron-mobility transistor was fabricated. A dual-AlN back-barrier scheme was developed…”
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29 Boarding Inpatients in the Emergency Department Increases Discharged Patient Length of Stay by White, B.A, Biddinger, P.D, Yuchiao, C, Greene, B, Carignan, S, Brown, D.F

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380 Emergency Airway Management in Japan: Interim Analysis of a Multi-Center Prospective Observational Study by Hasegawa, K, Hagiwara, Y, Chiba, T, Watase, H, Brown, C.A, Walls, R.M, Brown, D.F

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179: Vertical Patient Flow, an Innovative Approach to Crowding In US Academic Emergency Departments by Hamedani, A.G, Liu, S.W, Brown, D.F, Asplin, B.R, Camargo, C.A

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f and f of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT by Nidhi, Dasgupta, S., Yi Pei, Swenson, B.L., Brown, D.F., Keller, S., Speck, J.S., Mishra, U.K.

“…In this letter, we demonstrate the record small-signal performance from N-polar GaN-based metal-insulator-semiconductor high-electron-mobility transistors…”
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Emergency Airway Management in Japan: Interim Analysis of a Multi-center Prospective Observational Study by Hasegawa, K, Brown, C.A, Walls, R.M, Brown, D.F, Hagiwara, Y, Chiba, T, Watase, H

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237: Supplemented Triage and Rapid Treatment in the Emergency Department by White, B.A, Brown, D.F, Sinclair, J, Chang, Y, Carignan, S, McIntyre, J.A, Biddinger, P.D

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87 Imbalance in US Emergency Department Openings and Closures Over 18 Years of Increasing Demand for Emergency Care: 2001 to 2018 by Camargo, C.A., Sullivan, A.F., Espinola, J.A., Boggs, K.M., Brown, D.F.

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[Formula Omitted] and [Formula Omitted] of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT by Nidhi, Nidhi, Dasgupta, S, Pei, Yi, Swenson, B.L, Brown, D.F, Keller, S, Speck, J.S, Mishra, U.K

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Spring 2009, Houston by BROWN, D. F.

“…A poem is presented…”
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Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates by Umana-Membreno, G.A., Fehlberg, T.B., Kolluri, S., Brown, D.F., Parish, G., Nener, B.D., Keller, S., Mishra, U.K., Faraone, L.

“…N-polar GaN/AlGaN films grown on vicinal substrates are shown to exhibit significant anisotropy in carrier mobility but isotropic sheet charge density…”
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