Search Results - "Brouk, I."

  • Showing 1 - 16 results of 16
Refine Results
  1. 1

    1/f noise in CMOS transistors for analog applications by Nemirovsky, Y., Brouk, I., Jakobson, C.G.

    Published in IEEE transactions on electron devices (01-05-2001)
    “…Noise measurements of the 1/f noise in PMOS and NMOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to…”
    Get full text
    Journal Article
  2. 2

    Characterization of crosstalk between CMOS photodiodes by Brouk, I, Nemirovsky, Y, Lachowicz, S, Gluszak, E.A, Hinckley, S, Eshraghian, K

    Published in Solid-state electronics (2002)
    “…The crosstalk in CMOS photodiodes has been measured, at two wavelengths of 543 and 633 nm, by an experimental structure containing several types of photodiodes…”
    Get full text
    Journal Article
  3. 3

    Measurements and Simulations of Low Dark Count Rate Single Photon Avalanche Diode Device in a Low Voltage 180-nm CMOS Image Sensor Technology by Leitner, T., Feiningstein, A., Turchetta, R., Coath, R., Chick, S., Visokolov, G., Savuskan, V., Javitt, M., Gal, L., Brouk, I., Bar-Lev, S., Nemirovsky, Y.

    Published in IEEE transactions on electron devices (01-06-2013)
    “…This paper presents the key features of single photon avalanche diode (SPAD) devices fabricated in a low voltage commercial 180-nm CMOS image sensor technology…”
    Get full text
    Journal Article
  4. 4

    An Estimation of Single Photon Avalanche Diode (SPAD) Photon Detection Efficiency (PDE) Nonuniformity by Savuskan, V., Brouk, I., Javitt, M., Nemirovsky, Y.

    Published in IEEE sensors journal (01-05-2013)
    “…An analytical expression estimating the photon detection efficiency (PDE) nonuniformity of single-photon avalanche diodes is derived. The estimation relies…”
    Get full text
    Journal Article
  5. 5

    Selecting Single Photon Avalanche Diode (SPAD) Passive-Quenching Resistance: An Approach by Savuskan, V., Javitt, M., Visokolov, G., Brouk, I., Nemirovsky, Y.

    Published in IEEE sensors journal (01-06-2013)
    “…An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a…”
    Get full text
    Journal Article
  6. 6

    Dimensional effects in CMOS photodiodes by Brouk, Igor, Nemirovsky, Yael

    Published in Solid-state electronics (2002)
    “…CMOS photodiodes with various structures and dimensions were measured and analyzed. The photodiode types under study include structures implemented by: n +…”
    Get full text
    Journal Article
  7. 7

    Micro-machined CMOS-SOI transistor (TMOS) thermal sensor operating in air by Zviagintsev, A., Blank, T., Brouk, I., Bar-Lev, S., Stolyarova, S., Svetlitza, A., Bloom, I., Nemirovsky, A., Nemirovsky, Y.

    “…This paper presents the performance of CMOS-SOI TMOS thermal sensor processed in a well-established 1μm technology, operating in air. The TMOS is a…”
    Get full text
    Conference Proceeding
  8. 8

    Analysis of noise in CMOS image sensor by Brouk, I., Nemirovsky, A., Nemirovsky, Y.

    “…CMOS image sensors based on active pixel sensors (APS) are now the preferred technology for most imaging applications. With advanced technology, reduced…”
    Get full text
    Conference Proceeding
  9. 9

    The TeraMOS sensing pixel for monolithic passive uncooled THz imagers by Svetlitza, A., Brouk, I., Bar-Lev, S., Stolyarova, S., Nemirovsky, Y.

    “…We report a novel THz sensor, based on several leading technologies: THz photonics, CMOS-SOI and NEMS. By integrating the TeraMOS sensor with "thermal…”
    Get full text
    Conference Proceeding
  10. 10

    The TeraMOS sensor for monolithic passive THz imagers by Corcos, D., Brouk, I., Malits, M., Svetlitza, A., Stolyarova, S., Abramovich, A., Farber, E., Bachar, N., Elad, D., Nemirovsky, Y.

    “…We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro…”
    Get full text
    Conference Proceeding
  11. 11

    Noise characterization of the 0.35 /spl mu/m CMOS analog process implemented in regular and SOI wafers by Brouk, I., Nemirovsky, Y.

    “…Noise measurements of the 1/f noise in p-MOS and n-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to…”
    Get full text
    Conference Proceeding
  12. 12

    CMOS DC to DC switched converter with on chip inductors by Svetlitza, A., Shapira, S., Unikovski, A., Peled, G., Brouk, I., Nemirovsky, Y.

    “…In this study we report a monolithic buck converter power IC with on-chip ferrite core inductors. The power IC is designed and fabricated with a standard…”
    Get full text
    Conference Proceeding
  13. 13

    High performance MEMS 0.18μm RF-CMOS transformers by Katz, S., Brouk, I., Stolyarova, S., Shapira, S., Nemirovsky, Y.

    “…This work presents a micromachined RF-CMOS transformer fabricated in a commercially available 0.18 μm CMOS process. Maskless micromachining post-processing is…”
    Get full text
    Conference Proceeding
  14. 14

    CMOS SOI image sensor by Brouk, L., Nemirovsky, Y.

    “…Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained…”
    Get full text
    Conference Proceeding
  15. 15

    1/f noise in CMOS transistors for analog applications by Brouk, I., Nemirovsky, Y.

    “…Noise measurements of the 1/f noise in p-mos and n-mos transistors for analog applications are reported under wide bias conditions ranging from subthreshold to…”
    Get full text
    Conference Proceeding
  16. 16

    1/f noise in advanced CMOS transistors by Nemirovsky, Y, Corcos, D, Brouk, I, Nemirovsky, A, Chaudhry, S

    “…This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of…”
    Get full text
    Magazine Article