Search Results - "Brinkevich, D. I."
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1
Activation Radionuclides in the Process of Irradiation of a Niobium Target at the Cyclone 18/9 HC Cyclotrone
Published in Physics of atomic nuclei (01-12-2020)“…The accumulation of long-lived radionuclides (LRNs) produced in water [ 18 O]H 2 O under irradiation at the Cyclone 18/9 HC cyclotron with a niobium target and…”
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2
Frustrated Total Internal Reflection Spectra of Diazoquinone–Novolac Photoresist Films
Published in Journal of applied spectroscopy (2021)“…Radiation-induced effects in thin films of diazoquinone–novolac photoresists on silicon irradiated with high-energy electrons (~5 MeV) were investigated by…”
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3
Accumulation of Tritium and Other Undesirable β-Emitting Radionuclides in the Production of Radiopharmaceuticals for PET Diagnostics
Published in Physics of atomic nuclei (01-12-2023)“…The article deals with the problem of formation of undesirable β-emitting radionuclides (RNs) in the production of radiopharmaceuticals for PET diagnostics. It…”
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4
Ion Implantation in Diazoquinone–Novolac Photoresist
Published in High energy chemistry (01-08-2022)“…The processes of modifying the structural and optical properties of FP9120 and S1813 diazoquinone–novolac photoresist films on single-crystal silicon wafers…”
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5
Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions
Published in High energy chemistry (01-12-2023)“…FP9120 diazoquinone–novolac positive photoresist films 1.5 µm thick implanted with Ag + ions and supported on the surface of KDB-10 (111) silicon wafers by…”
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6
Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon
Published in High energy chemistry (01-02-2024)“…In this work, the effect of irradiation with 5-MeV electrons on the adhesive and strength properties of the films of diazoquinone–novolac photoresists FP9120,…”
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7
Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions
Published in Russian microelectronics (2021)“…In this paper, we study the radiation-induced processes occurring during the implantation of antimony ions into films of the positive diazoquinone-novolac…”
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8
Modification of Diazoquinone–Novolac Photoresist Films beyond the Region of Implantation of B+ Ions
Published in High energy chemistry (01-09-2020)“…Diazoquinone–novolac photoresist FP9120 films of 1.0–2.5 μm in thickness with boron ions, implanted at an incident ion energy of 60 keV and a fluence of 5 × 10…”
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9
IR-Fourier Spectroscopy of Attenuated Total Internal Reflection of Polyimide Films on Single-Crystal Silicon Wafers
Published in Journal of applied spectroscopy (01-05-2024)“…Attenuated total internal reflection (ATR) spectra of polyimide PI-2610 films deposited on single-crystal silicon wafers by centrifugation were studied after…”
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10
Fourier-IR Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography
Published in Journal of applied spectroscopy (2024)“…Photoresist (PR) NFR 016D4 films deposited on the surface of silicon (Si) wafers by centrifugation were studied by attenuated total internal reflection…”
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11
Adhesion of Diazoquinone–Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon
Published in High energy chemistry (2020)“…The effect of ion implantation on the specific energy of delamination of FP9120 diazoquinone–novolac photoresist films deposited on single-crystal silicon…”
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12
Activation of the Cooling Circuit Water of the Cyclone 18/9-HC Cyclotron during the Production of 18F
Published in Physics of atomic nuclei (2019)“…Processes of accumulation of radionuclides in the cooling circuit water of the Cyclone 18/9-HC cyclotron were studied under proton irradiation of the Nirta…”
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13
Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon
Published in High energy chemistry (01-11-2021)“…In this work, the effect of γ-irradiation on the adhesion properties of FP9120 diazoquinone–novolac photoresist films deposited on single-crystal silicon…”
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14
Radiation-Induced Processes in Diazoquinone–Novolac Resist Films under Irradiation with 60Co γ-Rays
Published in High energy chemistry (2021)“…The processes occurring under the irradiation of FP9120 diazoquinone–novolac resist films on silicon with 60 Co γ-rays have been studied by attenuated total…”
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15
Separation of Long-Lived Radionuclides on QMA Light Anion-Exchange Cartridge in Manufacture of Radiopharmaceutical Preparations Based on 18F
Published in Radiochemistry (New York, N.Y.) (2021)“…Sorption and elution on a QMA light anion-exchange cartridge of long-lived radionuclides formed in [ 18 O]H 2 O under irradiation of a niobium target with…”
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16
Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures
Published in Journal of applied spectroscopy (01-09-2022)“…The behavior of nitrogen in silicon dioxide films on single-crystal silicon substrates was studied by attenuated total reflection (ATR) and time-of-flight…”
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17
Transformation of the Spectra of a Attenuated Total Reflection when Drying a Diazoquinone-Novolach Photoresist
Published in Russian microelectronics (2021)“…The Fourier transform infrared spectroscopy of the attenuated total reflection (ATR), solutions and films of a positive diazoquinone-novolac (DN) FP9120…”
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Processes Induced in DLC/Polyimide Structures by Irradiation with 60Co γ-Rays
Published in High energy chemistry (2022)“…The DLC/Kapton structures irradiated with 60 Co γ-rays at doses to 1 MGy have been studied by measuring transmission and attenuated total reflection (ATR)…”
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19
EPR Spectroscopy of Diazoquinone–Novolac Resist Films Implanted with P+ and B+ Ions
Published in High energy chemistry (01-03-2020)“…The nature of stable radicals in FP9120 positive photoresist films implanted with boron and phosphorus ions and deposited on the surface of single-crystal…”
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20
Mechanism of the Adhesive Interaction of Diazoquinone-Novolac Photoresist Films with Monocrystalline Silicon
Published in Journal of applied spectroscopy (01-09-2020)“…Fourier-transform infra-red spectroscopy with frustrated total internal reflection was used to study radiation-induced processes upon the implantation of boron…”
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