Search Results - "Breyer, T"
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1
Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs
Published in IEEE electron device letters (01-09-2020)“…This letter investigates the impact of read operation on the electrical properties of hafnium oxide-based ferroelectric field-effect transistors (FeFETs). We…”
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2
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
Published in IEEE transactions on electron devices (01-08-2020)“…Long data retention is a critical requirement for many of the potential applications of HfO 2 -based ferroelectric field-effect transistors (FeFETs). However,…”
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3
Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory
Published in IEEE journal of the Electron Devices Society (2020)“…Due to their CMOS compatibility, hafnium oxide based ferroelectric field-effect transistors (FeFET) gained remarkable attention recently, not only in the…”
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4
A FeFET-Based Hybrid Memory Accessible by Content and by Address
Published in IEEE journal on exploratory solid-state computational devices and circuits (01-06-2022)“…Emerging nonvolatile memory technologies are attracting interest from the system design level to implement alternatives to conventional von-Neumann computing…”
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5
A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
Published in Journal of computational electronics (01-12-2017)“…The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art…”
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6
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance
Published in IEEE transactions on electron devices (01-09-2019)“…Hafnium oxide (HfO 2 )-based ferroelectric field-effect transistor (FeFET) is an attractive device for nonvolatile memory. However, when compared to the…”
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7
Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
Published in Applied physics letters (01-02-2021)“…Ferroelectric hafnium oxide (HfO2) has been extensively studied for over a decade, especially as a CMOS-compatible material in emerging memory applications…”
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8
Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating
Published in IEEE electron device letters (01-02-2019)“…This letter investigates the impact of self-heating on the post-cycling functionality of a scaled hafnium oxide-based ferroelectric field-effect transistor…”
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9
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior
Published in IEEE transactions on electron devices (01-12-2020)“…Accumulative switching (AS) in ferroelectric field-effect transistors (FeFETs), which takes place under a train of subcritical voltage pulses, represents not…”
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10
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory
Published in IEEE transactions on circuits and systems. I, Regular papers (01-04-2022)“…Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and…”
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11
Automatic curvilinear reformatting of three-dimensional MRI data of the cerebral cortex
Published in NeuroImage (Orlando, Fla.) (2008)“…Curvilinear reformatting of three-dimensional (3D) MRI data of the cerebral cortex is a well-established tool which improves the display of the gyral…”
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12
Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs
Published in IEEE transactions on electron devices (01-09-2021)“…Doping of HfO 2 thin films is a powerful means for stabilizing ferroelectricity in this material. Yet, the amount of doping is critical to achieving the best…”
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13
Frequency Mixing with HfO2‑Based Ferroelectric Transistors
Published in ACS applied materials & interfaces (07-10-2020)“…Second harmonic generation (SHG) and frequency mixing of electrical signals are fundamental for a wide range of radiofrequency applications. Recently,…”
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14
Acquired laryngomalacia of the epiglottis: case report and review of the literature
Published in HNO (01-12-2008)“…Reports on acquired traumatic laryngomalacia appear only rarely in the literature. We report a case of a 47-year-old patient with breathlessness after a…”
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15
Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays
Published in 2020 IEEE International Symposium on Circuits and Systems (ISCAS) (01-10-2020)“…Recently, memory and logic were brought into closer vicinity by introducing Logic-in-Memory circuits based on ferroelectric FETs (FeFET), where the FeFET not…”
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Conference Proceeding -
16
Assessment of cognitive functions before and after stereotactic interstitial radiosurgery of hypothalamic hamartomas in patients with gelastic seizures
Published in Epilepsy & behavior (01-03-2007)“…Abstract We assessed cognitive functions before and 3 months after interstitial radiotherapy in 14 patients with gelastic seizures caused by hypothalamic…”
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17
EPR spectroscopic investigation of the sol–gel transition in modified tetraethylorthosilicate gels
Published in Journal of colloid and interface science (01-10-2003)“…Cu 2+ ions are used to follow the sol–gel transition in amino-modified TEOS mixtures. In contrast to unmodified TEOS gels, fixation of the spin probe (Cu 2+)…”
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18
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory
Published in ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) (01-09-2019)“…Ferroelectric field-effect transistors (FeFET) based on hafnium oxide offer great opportunities for Logic-in-Memory applications, due to their natural ability…”
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Conference Proceeding -
19
Erworbene Laryngomalazie der Epiglottis: Fallbeschreibung und Literaturübersicht
Published in HNO (01-12-2008)“…Zusammenfassung Fallbeschreibungen von erworbenen traumatischen Laryngomalazien sind in der Literatur äußerst selten. Wir berichten über eine 47-jährige…”
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20
FeFET: A versatile CMOS compatible device with game-changing potential
Published in 2020 IEEE International Memory Workshop (IMW) (01-05-2020)“…With the discovery of ferroelectricity in HfO 2 based thin films and the co-integration of ferroelectric field effect transistors (FeFET) into standard high-k…”
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Conference Proceeding