Search Results - "Brewer, P.D"

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  1. 1

    Regional bond strengths of resins to human root dentine by Yoshiyama, M., Carvalho, R.M., Sano, H., Horner, J.A., Brewer, P.D., Pashley, D.H.

    Published in Journal of dentistry (01-11-1996)
    “…Objectives: The demand for restoration of root dentine defects such as cervical erosion and root caries has significantly increased recently, but there is…”
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    Journal Article
  2. 2

    Dense heterogeneous integration for InP Bi-CMOS technology by Royter, Y., Patterson, P.R., Li, J.C., Elliott, K.R., Hussain, T., Boag-O'Brien, M.F., Duvall, J.R., Montes, M.C., Hitko, D.A., Sewell, J.S., Sokolich, M., Chow, D.H., Brewer, P.D.

    “…InP Bi-CMOS technology capable of wafer-scale device-level heterogeneous integration (HI) of InP HBTs and CMOS has been developed. With this technology, full…”
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    Conference Proceeding
  3. 3

    Dimensional changes of demineralized human dentine during preparation for scanning electron microscopy by Carvalho, R.M., Yoshiyama, M., Brewer, P.D., Pashley, D.H.

    Published in Archives of oral biology (01-04-1996)
    “…Dentine rods measuring approx. 0.7 × 0.7 × 5.0 mm were prepared from the crowns of extracted human third molars. The specimens were demineralized in 0.5 M EDTA…”
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    Journal Article
  4. 4

    Real-time control of the MBE growth of InGaAs on InP by Roth, J.A, Chow, D.H, Olson, G.L, Brewer, P.D, Williamson, W.S, Johs, B

    Published in Journal of crystal growth (01-05-1999)
    “…The use of a multiple-sensor control system to regulate in real-time the growth of thick, lattice-matched epitaxial films of InGaAs and InAlAs on InP…”
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    Journal Article
  5. 5

    Status of HgCdTe-MBE technology for producing dual-band infrared detectors by Rajavel, R.D, Brewer, P.D, Jamba, D.M, Jensen, J.E, LeBeau, C, Olson, G.L, Roth, J.A, Williamson, W.S, Bangs, J.W, Goetz, P, Johnson, J.L, Patten, E.A, Wilson, J.A

    Published in Journal of crystal growth (01-06-2000)
    “…Progress on achieving reproducible growth of high performance, dual-band IR detector structures in HgCdTe grown by molecular beam epitaxy (MBE) is described…”
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    Journal Article
  6. 6

    Feedback control of substrate temperature and film composition during MBE growth of lattice-matched InGaAs on InP by Roth, J.A., Dubray, J.-J., Chow, D.H., Brewer, P.D., Olson, G.L.

    “…The use of in situ sensors to achieve real-time control of MBE growth is a rapidly evolving technology that promises to revolutionize MBE in terms of process…”
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    Conference Proceeding