Scaling NbTiN-based ac-powered Josephson digital to 400M devices/cm$^2

We describe a fabrication stackup for digital logic with 16 superconducting NbTiN layers, self-shunted a-silicon barrier Josephson Junctions (JJs), and low loss, high-$\kappa$ tunable HZO capacitors. The stack enables 400 MJJ/cm$^2$ device density, efficient routing, and AC power distribution on a r...

Full description

Saved in:
Bibliographic Details
Main Authors: Herr, Anna, Herr, Quentin, Brebels, Steve, Kim, Min-Soo, Pokhrel, Ankit, Hodges, Blake, Josephsen, Trent, ONeal, Sabine, Bai, Ruiheng, Nowack, Katja, Valente-Feliciano, Anne-Marie, Tökei, Zsolt
Format: Journal Article
Language:English
Published: 29-03-2023
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We describe a fabrication stackup for digital logic with 16 superconducting NbTiN layers, self-shunted a-silicon barrier Josephson Junctions (JJs), and low loss, high-$\kappa$ tunable HZO capacitors. The stack enables 400 MJJ/cm$^2$ device density, efficient routing, and AC power distribution on a resonant network. The materials scale beyond 28nm lithography and are compatible with standard high-temperature CMOS processes. We report initial results for two-metal layer NbTiN wires with 50nm critical dimension. A semi-ascendance wire-and-via process module using 193i lithography and 50nm critical dimension has shown cross-section uniformity of 1%=1s across the 300mm wafer, critical temperature of 12.5K, and critical current of 0.1mA at 4.2K. We also present a new design of the resonant AC power network enabled by NbTiN wires and HZO MIM capacitors. The design matches the device density and provides a 30 GHz clock with estimated efficiency of up to 90%. Finally, magnetic imaging of patterned NbTiN ground planes shows low intrinsic defectivity and consistent trapping of vorteces in 0.5 mm holes spaced on a 20 $\mu$m x 20 $\mu$m grid.
DOI:10.48550/arxiv.2303.16792