Search Results - "Braunger, D."

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    Sequential processes for the deposition of polycrystalline Cu(In,Ga)(S,Se) 2 thin films: Growth mechanism and devices by Walter, T., Braunger, D., Dittrich, H., Köble, Ch, Herberholz, R., Schock, H.W.

    “…Sequential processes for the fabrication of polycrystalline Cu(In,Ga)(S,Se) 2 thin films using (In,Ga) x (S,Se) precursors are presented and discussed…”
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    Journal Article
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    Size-quantized CdS films in thin film CuInS2 solar cells by Gal, Dori, Hodes, Gary, Hariskos, Dimitri, Braunger, Dieter, Schock, Hans-Werner

    Published in Applied physics letters (23-11-1998)
    “…Semiconductor quantum dots and wires are the subject of great interest, mainly due to their size-dependent electronic structures, in particular increased band…”
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    Journal Article
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    Influence of damp heat on the electrical properties of Cu(In,Ga)Se sub(2) solar cells by Schmidt, M, Braunger, D, Schaeffler, R, Schock, H W, Rau, U

    Published in Thin solid films (01-01-2000)
    “…This article investigates the influence of damp heat treatments on the electronic properties of ZnO/CdS/Cu(In,Ga)Se sub(2) heterojunction solar cells. We…”
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    Journal Article
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    Influence of sodium on the growth of polycrystalline Cu(In,Ga)Se sub(2) thin films by Braunger, D, Hariskos, D, Bilger, G, Rau, U, Schock, H W

    Published in Thin solid films (01-01-2000)
    “…We investigate the influence of Na on the growth of Cu(In,Ga)Se sub(2) thin-films by three model experiments. First, we examine the influence of Na on the Se…”
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    Journal Article
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    Flux-enhanced growth of multi-source physical vapor deposited SrGa 2S 4:Ce,Cl electroluminescent thin films by Braunger, D., Oberacker, T.A., Schock, H.W.

    Published in Journal of crystal growth (1996)
    “…The flux-assisted deposition of the active phosphor layer in the highest efficiency, true blue (CIE coordinates of x = 0.14 y = 0.12 ) electroluminescent (EL)…”
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    Journal Article
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    An 11.4% efficient polycrystalline thin film solar cell based on CuInS 2 with a Cd-free buffer layer by Braunger, D., Hariskos, D., Walter, T., Schock, H.W.

    “…The fabrication of a 11.4% efficient thin film solar cell based on CuInS 2 with an In x (OH,S) y buffer layer is described. The device parameters and…”
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    Journal Article
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    Annealing studies on CuIn(Ga)Se sub(2): The influence of gallium by Dirnstorfer, I, Burkhardt, W, Kriegseis, W, Oesterreicher, I, Alves, H, Hofmann, D M, Ka, O, Polity, A, Meyer, B K, Braunger, D

    Published in Thin solid films (01-01-2000)
    “…In-rich CuInSe sub(2) (CIS) and CuIn(Ga)Se sub(2) (CIGS) with Ga/(Ga+In) identical with 28% were annealed in air at 400 degree C. After annealing the Ga-free…”
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    Journal Article
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    Properties of CuInS sub(2) thin films grown by a two-step process without H sub(2)S by Klenk, R, Blieske, U, Dieterle, V, Ellmer, K, Fiechter, S, Hengel, I, Jaeger-Waldau, A, Kampschulte, T, Kaufmann, Ch, Klaer, J, Lux-Steiner, M Ch, Braunger, D, Hariskos, D, Ruckh, M, Schock, H W

    Published in Solar energy materials and solar cells (01-12-1997)
    “…CuInS sub(2) thin films were prepared by sulfurization of sequentially deposited Cu/In stacks with elemental sulfur. Precursors as well as reacted films are…”
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    Journal Article
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    Properties of CuInS 2 thin films grown by a two-step process without H 2S by Klenk, R., Blieske, U., Dieterle, V., Ellmer, K., Fiechter, S., Hengel, I., Jäger-Waldau, A., Kampschulte, T., Kaufmann, Ch, Klaer, J., Lux-Steiner, M.Ch, Braunger, D., Hariskos, D., Ruckh, M., Schock, H.W.

    “…CuInS 2 thin films were prepared by sulfurization of sequentially deposited Cu In stacks with elemental sulfur. Precursors as well as reacted films are…”
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    Journal Article
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    Nucleation and growth of the CdS buffer layer on Cu(In,Ga)Se/sub 2/ thin films by Friedlmeier, T.M., Braunger, D., Hariskos, D., Kaiser, M., Wanka, H.N., Schock, H.W.

    “…In this work, the nucleation and growth of the CdS buffer layer (chemical bath deposition) on Cu(In,Ga)Se/sub 2/. (CIGS) thin films was observed using the…”
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    Conference Proceeding